Search Results - "Cooper, JA"

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  1. 1

    SiC power-switching devices-the second electronics revolution? by Cooper, J.A., Agarwal, A.

    Published in Proceedings of the IEEE (01-06-2002)
    “…Silicon carbide (SiC) offers significant advantages for power-switching devices because the critical field for avalanche breakdown is about ten times higher…”
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  2. 2

    Status and prospects for SiC power MOSFETs by Cooper, J.A., Melloch, M.R., Singh, R., Agarwal, A., Palmour, J.W.

    Published in IEEE transactions on electron devices (01-04-2002)
    “…SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and…”
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  3. 3

    A self-aligned process for high-voltage, short-channel vertical DMOSFETs in 4H-SiC by Matin, M., Saha, A., Cooper, J.A.

    Published in IEEE transactions on electron devices (01-10-2004)
    “…In this paper, we describe a self-aligned process to produce short-channel vertical power DMOSFETs in 4H-SiC. By reducing the channel length to /spl les/0.5…”
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  4. 4

    Tissue Engineering: Orthopedic Applications by Laurencin, C. T, Ambrosio, A. M. A, Borden, M. D, Cooper, J. A

    Published in Annual review of biomedical engineering (01-01-1999)
    “…Because of an aging population and increased occurrence of sports-related injuries, musculoskeletal disorders have become one of the major health concerns in…”
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  5. 5

    SiC power Schottky and PiN diodes by Singh, R., Cooper, J.A., Melloch, M.R., Chow, T.P., Palmour, J.W.

    Published in IEEE transactions on electron devices (01-04-2002)
    “…The present state of SiC power Schottky and PiN diodes are presented in this paper. The design, fabrication, and characterization of a 130 A Schottky diode,…”
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  6. 6

    On-State Characteristics of SiC power UMOSFETs on 115-μm drift Layers by Sui, Y., Tsuji, T., Cooper, J.A.

    Published in IEEE electron device letters (01-04-2005)
    “…We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115-μm-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV…”
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    High current gain 4H-SiC npn bipolar junction transistors by Chih-Fang Huang, Cooper, J.A.

    Published in IEEE electron device letters (01-06-2003)
    “…The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base…”
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  9. 9

    Measurement of high-field electron transport in silicon carbide by Khan, I.A., Cooper, J.A.

    Published in IEEE transactions on electron devices (01-02-2000)
    “…We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied…”
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  10. 10

    Mutation detection rate and spectrum in familial hypercholesterolaemia patients in the UK pilot cascade project by Taylor, A, Wang, D, Patel, K, Whittall, R, Wood, G, Farrer, M, Neely, RDG, Fairgrieve, S, Nair, D, Barbir, M, Jones, JL, Egan, S, Everdale, R, Lolin, Y, Hughes, E, Cooper, JA, Hadfield, SG, Norbury, G, Humphries, SE

    Published in Clinical genetics (01-06-2010)
    “…Taylor A, Wang D, Patel K, Whittall R, Wood G, Farrer M, Neely RDG, Fairgrieve S, Nair D, Barbir M, Jones JL, Egan S, Everdale R, Lolin Y, Hughes E, Cooper JA,…”
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  11. 11

    Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC by Mathur, M.M., Cooper, J.A.

    Published in IEEE transactions on electron devices (01-03-1999)
    “…Time-dependent-dielectric-breakdown (TDDB) measurements are reported on n-type 6H-SiC MOS capacitors formed by thermal oxidation. Failure distributions are…”
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  12. 12

    Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations by Morisette, D.T., Cooper, J.A.

    Published in IEEE transactions on electron devices (01-09-2002)
    “…In order to select the optimal device for a particular application, designers must carefully analyze the tradeoffs between competing devices. Recent progress…”
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  13. 13

    Static and dynamic characterization of large-area high-current-density SiC Schottky diodes by Morisette, D.T., Cooper, J.A., Melloch, M.R., Dolny, G.M., Shenoy, P.M., Zafrani, M., Gladish, J.

    Published in IEEE transactions on electron devices (01-02-2001)
    “…The static and dynamic characteristics of large-area, high-voltage 4H-SiC Schottky barrier diodes are presented. With a breakdown voltage greater than 1200 V…”
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  14. 14

    Experimental demonstration of a silicon carbide IMPATT oscillator by Luo Yuan, Cooper, J.A., Melloch, M.R., Webb, K.J.

    Published in IEEE electron device letters (01-06-2001)
    “…Silicon carbide (SiC) is an excellent material for high-power and high-frequency applications because of its high critical field, high electron saturation…”
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  15. 15

    A mechanism for inside-out lamination in the neocortex by Cooper, Jonathan A

    Published in Trends in neurosciences (Regular ed.) (01-03-2008)
    “…We outline a unified model for inside-out layering of the neocortex, hinging on a new interpretation for the effects of Reelin on neuronal migrations. The…”
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  16. 16

    Discrete water quality sampling at open-water aquaculture sites: limitations and strategies by Jansen, H. M., Reid, G. K., Bannister, R. J., Husa, V., Robinson, S. M. C., Cooper, J. A., Quinton, C., Strand, Ø.

    Published in Aquaculture Environment Interactions (01-01-2016)
    “…While environmental performance of cage-based aquaculture is most often monitored through benthic conditions, there may also be requirements that necessitate…”
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    Memantine for agitation/aggression and psychosis in moderately severe to severe Alzheimer's disease: a pooled analysis of 3 studies by Wilcock, Gordon K, Ballard, Clive G, Cooper, James A, Loft, Henrik

    Published in The journal of clinical psychiatry (01-03-2008)
    “…Long-standing evidence indicates that Alzheimer's disease patients with behavioral symptoms have a worse prognosis and a more rapid disease progression. The…”
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  19. 19

    Incidental and intentional recall in Parkinson's disease: an account based on diminished attentional resources by Cooper, J A, Sagar, H J

    “…The recall of common objects and their spatial location was examined in 65 patients with Parkinson's disease (PD) under conditions in which available…”
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  20. 20

    Fiber-based tissue-engineered scaffold for ligament replacement: design considerations and in vitro evaluation by Cooper, James A., Lu, Helen H., Ko, Frank K., Freeman, Joseph W., Laurencin, Cato T.

    Published in Biomaterials (01-05-2005)
    “…The anterior cruciate ligament (ACL) is the major intraarticular ligamentous structure of the knee, which functions as a joint stabilizer. It is the most…”
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