Properties of CdTe layers deposited by a novel method -Pulsed Plasma Deposition
CdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the resu...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
23-03-2011
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | CdTe and CdS are emerging as the most promising materials for thin film
photovoltaics in the quest of the achievement of grid parity. The major
challenge for the advancement of grid parity is the achievement of high quality
at the same time as low fabrication cost. The present paper reports the results
of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth
of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method
allows to deposit at low temperature. The optical band gap of deposited layers
is 1.50 eV, in perfect accord with the value reported in the literature for the
crystalline cubic phase of the CdTe. The films are highly crystalline with a
predominant cubic phase, a random orientation of the grains of the film and
have an extremely low surface roughness of 4.6\pm0.7 nm r.m.s.. The low
roughness, compared to traditional thermal deposition methods (close space
sublimation and vapour transport) permits the reduction of the active absorber
and n-type semiconductor layers resulting in a dramatic reduction of material
usage and the relative deposition issues like safety, deposition rate and
ultimately cost |
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| DOI: | 10.48550/arxiv.1103.4539 |