Search Results - "Constantinou, Procopios C"

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy by Stock, Taylor J. Z, Warschkow, Oliver, Constantinou, Procopios C, Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S, Kölker, Alexander, McKenzie, David R, Schofield, Steven R, Curson, Neil J

“…Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling…”
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Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon by D'Anna, Nicolò, Ferreira Sanchez, Dario, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C., Stock, Taylor J.Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Bartkowiak, Marek, Soh, Y., Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel

“…The progress of miniaturization in integrated electronics has led to atomic and nanometer‐sized dopant devices in silicon. Such structures can be fabricated…”
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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO 2 interface by Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J Z, Grütter, Peter

“…We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO interface. Our measurements demonstrate that two-state…”
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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface by Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J Z, Grütter, Peter

“…We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO2 interface. Our measurements demonstrate that two-state…”
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Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication by Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Bowler, David R., Schofield, Steven R., Curson, Neil J.

“…Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic,…”
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Resistless EUV lithography: Photon-induced oxide patterning on silicon by Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C, Stock, Taylor J Z, Curson, Neil J, Schofield, Steven R, Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin

“…In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV…”
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Spatially Resolved Dielectric Loss at the Si / SiO 2 Interface by Cowie, Megan, Stock, Taylor J. Z., Constantinou, Procopios C., Curson, Neil J., Grütter, Peter

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On the sensitivity of convergent beam low energy electron diffraction patterns to small atomic displacements by Constantinou, Procopios C., Jesson, David E.

“…Multiple scattering simulations are developed and applied to assess the potential of convergent beam low-energy electron diffraction (CBLEED) to distinguish…”
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Spatially Resolved Dielectric Loss at the Si/SiO_{2} Interface by Cowie, Megan, Stock, Taylor J Z, Constantinou, Procopios C, Curson, Neil J, Grütter, Peter

“…The Si/SiO_{2} interface is populated by isolated trap states that modify its electronic properties. These traps are of critical interest for the development…”
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Fabrication and Characterization of Metallic, Two-Dimensional Dopant δ-Layers in Silicon by Constantinou, Procopios C

“…With the recent advances of deterministic atomic-scale patterning of phosphorous and arsenic on silicon, proposed architectures for silicon-based quantum…”
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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface by Cowie, Megan, Constantinou, Procopios C, Curson, Neil J, Stock, Taylor J. Z, Grutter, Peter

“…We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state…”
Get full text

Spatially resolved dielectric loss at the Si/SiO$_2$ interface by Cowie, Megan, Stock, Taylor J. Z, Constantinou, Procopios C, Curson, Neil, Grütter, Peter

“…The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development…”
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Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication by Stock, Taylor J. Z, Warschkow, Oliver, Constantinou, Procopios C, Bowler, David R, Schofield, Steven R, Curson, Neil J

“…Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic,…”
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Element-specific, non-destructive profiling of layered heterostructures by D'Anna, Nicolò, Bragg, Jamie, Skoropata, Elizabeth, Hernández, Nazareth Ortiz, McConnell, Aidan G, Clémence, Maël, Ueda, Hiroki, Constantinou, Procopios C, Spruce, Kieran, Stock, Taylor J. Z, Fearn, Sarah, Schofield, Steven R, Curson, Neil J, Sanchez, Dario Ferreira, Grolimund, Daniel, Staub, Urs, Matmon, Guy, Gerber, Simon, Aeppli, Gabriel

“…Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now…”
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Resistless EUV lithography: photon-induced oxide patterning on silicon by Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C, Stock, Taylor J. Z, Curson, Neil J, Schofield, Steven R, Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin

“…L.-T. Tseng, Science Advances, Vol 9, eadf5997 (2023) In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100)…”
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Non-destructive X-ray imaging of patterned delta-layer devices in silicon by D'Anna, Nicolò, Sanchez, Dario Ferreira, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C, Stock, Taylor J. Z, Fearn, Sarah, Schofield, Steven R, Curson, Neil J, Bartkowiak, Marek, Soh, Y, Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel

“…Adv. Electron. Mater. 2023, 2201212 The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon…”
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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy by Stock, Taylor J. Z, Warschkow, Oliver, Constantinou, Procopios C, Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S, Kölker, Alexander, McKenzie, David R, Schofield, Steven R, Curson, Neil J

“…Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling…”
Get full text