Search Results - "Conley, J. F."

Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes by Alimardani, N., Conley, J. F.

“…The impact of nanolaminate insulator tunnel barriers on asymmetric metal workfunction metal-insulator-insulator-metal (MIIM) devices is investigated. We…”
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Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si by Kang, A. Y., Lenahan, P. M., Conley, J. F.

“…We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the…”
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The radiation response of the high dielectric-constant hafnium oxide/silicon system by Kang, A.Y., Lenahan, P.M., Conley, J.F.

“…We have explored the radiation response of the HfO/sub 2//Si system with a combination of capacitance versus voltage and electron spin resonance measurements…”
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Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous Ultraviolet Illumination by Huang, C.-C., Mason, A.D., Conley, J.F., Heist, C., Koesdjojo, M.T., Remcho, V.T., Afentakis, T.

“…The impact of parylene-A encapsulation and the effect of continuous ultraviolet (UV) exposure on ZnO nanobridge sensor response are investigated. ZnO nanowire…”
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Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si by Kang, A. Y., Lenahan, P. M., Conley, J. F., Solanki, R.

“…We report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor…”
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Heavy-ion-induced soft breakdown of thin gate oxides by Conley, J.F., Suehle, J.S., Johnston, A.H., Wang, B., Miyahara, T., Vogel, E.M., Bernstein, J.B.

“…Heavy-ion-induced soft and hard breakdown are investigated in thin gate oxides as a function of linear energy transfer, fluence, and voltage applied during…”
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Assessing machine-learning algorithms and image- and lidar-derived variables for GEOBIA classification of mining and mine reclamation by Maxwell, A.E., Warner, T.A., Strager, M.P., Conley, J.F., Sharp, A.L.

“…This study investigates machine-learning algorithms and measures derived from RapidEye satellite imagery and light detection and ranging (lidar) data for…”
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Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon by CONLEY, J. F, LENAHAN, P. M

“…Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E′ centers, into two hydrogen…”
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Atomic layer deposited high-k nanolaminate capacitors by Smith, S.W., McAuliffe, K.G., Conley, J.F.

“…Al 2O 3–Ta 2O 5 nanolaminate films were prepared via atomic layer deposition (ALD) on silicon with a single overall composition and thickness, but with a…”
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Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices by Conley, J.F., Lenahan, P.M.

“…The authors provide long-sought direct atomic scale evidence for molecular hydrogen reactions at a specific point defect in irradiated thermally-grown SiO/sub…”
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Synthesis, functionalization, and environmental stabilization of ZnO nanobridge transducers for gas and liquid-phase sensing by Mason, A.D., Huang, C.-C., Kondo, S., Koesdjojo, M.T., Tennico, Y.H., Remcho, V.T., Conley, J.F.

“…Three methods of functionalizing ZnO NW surfaces with biotin were demonstrated. Biotinylated ZnO NWs were found to dissolve during exposure to deionized (DI)…”
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ZnO nanobridge devices fabricated using carbonized photoresist by Pelatt, B.D., Huang, C.C., Conley, J.F.

“…Despite high interest for novel device applications, alignment and electrical integration of nanowires to lithographically defined features remains a…”
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Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O by Conley, J. F., Ono, Y., Solanki, R., Stecker, G., Zhuang, W.

“…We report on the electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 precursor for metal/oxide/semiconductor gate dielectric…”
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Using moment invariants to analyze cluster shapes and hypothesize potential causes by Conley, J.F.

“…Although there are many algorithms and statistical tests to detect clustering of geographical phenomena, such as disease cases, the follow-up task of analyzing…”
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Instabilities in oxide semiconductor transparent thin film transistors by Conley, J F

“…New amorphous oxide semiconductor transparent thin film transistors (TTFTs) exhibit good mobility (5 to >50 cm 2 /V-sec), are transparent, and can be processed…”
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Electron spin resonance of separation by implanted oxygen oxides : evidence for structural change and a deep electron trap by CONLEY, J. F, LENAHAN, P. M, ROITMAN, P

“…We present direct evidence for deep electron traps and structural changes in separation by implanted oxygen (SIMOX) buried oxides and evidence that some…”
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Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films by Conley, J. F., Lenahan, P. M., McArthur, W. F.

“…Measurements of the growth of E′ center precursor and hole trap precursor densities versus postoxidation anneal time show that both approach saturation values…”
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Degradation mechanisms in SOI n-channel LDMOSFETs by Vandooren, A, Conley, J.F, Cristoloveanu, S, Mojarradi, M, Kolawa, E

“…The back-gate bias modifies the series resistance and the overall performance of LDMOSFETs in linear and saturation operation. The influence of the back-gate…”
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Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides by Conley, J.F., Lenahan, P.M., Roitman, P.

“…The authors present direct evidence for the creation of deep electron traps in SIMOX (separation by implantation of oxygen) buried oxides. In addition, they…”
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Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon by CONLEY, J. F, LENAHAN, P. M

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