Search Results - "Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials"

Waveguide AlInAs/AlGaInAs avalanche photodiode for 20 Gbit/s photoreceivers by Cohen-Jonathan, C., Giraudet, L., Praseuth, J.P., Legros, E., Heliot, F., Bonzo, A.

“…High speed photodetectors are needed in optical communication systems and avalanche photodiodes are essential in highly sensitive photoreceivers at the 1.55…”
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Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs by Wakita, A.S., Rohdin, H., Su, C.-Y., Moll, N., Nagy, A., Robbins, V.M.

“…Lattice-matched AlInAs/GaInAs modulation-doped FETs (MODFETs) demonstrate excellent high-frequency, small-signal performance. However, high-power, large-signal…”
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D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process by Lai, R., Wang, H., Chen, Y.C., Block, T., Liu, P.H., Streit, D.C., Tran, D., Siegel, P., Barsky, M., Jones, W., Gaier, T.

“…We have developed a highly robust, high performance 0.1 /spl mu/m passivated InP HEMT MMIC process with frequency capability up to 200 GHz and beyond. This…”
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Passivation of InP-based HBTs for high bit rate circuit applications by Caffin, D., Bricard, L., Courant, J.L., How Kee Chun, L.S., Lescaut, B., Duchenois, A.M., Meghelli, M., Benchimol, J.L., Launay, P.

“…We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical…”
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Study of Ga/sub x/In/sub 1/spl times/x/P layers grown on InP for HFET application by Cohen, G.M., Zisman, P., Bahir, G., Ritter, D.

“…The crystalline quality of tensile strained Ga/sub 0.25/In/sub 0.75/P layers grown on InP substrates was investigated. Samples were grown by metal-organic…”
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Dark currents in compositionally-graded In/sub x/Ga/sub 1-x/As (.53<x<.82) by Olsen, G.H., Lange, M.J., Cohen, M.J., Kim, D.S., Forrest, S.R.

“…Best results with light detection in the near-infrared spectrum (0.5-2.5 /spl mu/m) have been obtained with indium gallium arsenide (In/sub x/Ga/sub 1-x/As)…”
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Growth study of self-assembled Ga/sub x/In/sub 1-x/As islands on InP by Drouot, V., Frechengues, S., Lambert, B., Loualiche, S., Le Corre, A., l'Haridon, H., Bandet, M.

“…The growth of self-assembled tridimensional (3D) islands has been increasingly studied lately to produce quantum dots. This technique is the most promising for…”
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Drain engineering in AlInAs/GaInAs HEMTs for high f/sub /spl tau// and f/sub max by Migliore, E., Chavarkar, P., Yen, J., Mishra, U.K., Fischetti, M.V., Laux, S.E.

“…We propose a novel lateral bandgap engineering technique to improve electron transport in the channel of an AlInAs/GaInAs HEMT. Electrons are launched at the…”
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The effect of high temperature annealing on 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers grown by MBE by Shimizu, H., Iwai, N., Mukaihara, T., Nishikata, K., Kasukawa, A.

“…The effect of high temperature annealing on the characteristics in 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers were investigated for the first time. It…”
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Improvement of self-organized quantum wire structures formed in (GaP)/sub n/(InP)/sub m/ superlattices by the growth on GaAs(011) substrate by Kim, S.J., Asahi, H., Takemoto, M., Asami, K., Gonda, S.

“…Self-organized quantum wire (QWR) structures are formed by the gas source molecular beam epitaxy growth of (GaP)/sub n/(InP)/sub m/ short period superlattices…”
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Surface damage in GaInAsP/InP wire structures by Cl/sub 2//H/sub 2/-ECR dry etching by Tamura, M., Ando, T., Nunoya, N., Tamura, S., Arai, S., Bacher, G.U.

“…We investigated photoluminescence (PL) intensity dependence on the width of GaInAsP/InP wire structures, which were fabricated by an electron cyclotron…”
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High-power high-speed Ga/sub 0.51/In/sub 0.49/P/In/sub x/Ga/sub 1-x/As doped-channel FET's by Yo-Sheng Lin, Shey-Shi Lu

“…The first Ga/sub 0.51/In/sub 0.49/P/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.22) doped-channel FETs (DCFETs) grown by GSMBE exhibiting excellent dc and…”
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Benefits and limitations in barrier design in InAsP/GaInP strain-balanced MQWs for improving the 1.3 /spl mu/m waveguide modulator performance by Mei, X.B., Loi, K.K., Chang, W.S.C., Tu, C.W.

“…We have investigated the limitations in the barrier design for InAsP/GaInP strain-balanced multiple quantum wells (MQWs) by measuring double-crystal X-ray…”
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A surface-normal reflective optical modulator at a wavelength of 1.3 /spl mu/m using the Wannier-Stark effect of the InP/InGaAsP superlattice by Kagawa, T., Tadanaga, O., Matsuoka, Y.

“…A surface-normal reflective optical modulator for the wavelength of 1.3 /spl mu/m was investigated using the Wannier-Stark effect of an InP/InGaAsP…”
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Semi-analytical analysis for optimization of 0.1-/spl mu/m InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability by Rohdin, H., Chung-Yi Su, Moll, N., Wakita, A., Nagy, A., Robbins, V., Kauffman, M.

“…We have measured and analyzed the bias limitations of our 0.1-/spl mu/m In/sub 53/Ga/sub 47/As-channel MODFETs. A semi-analytical model allows us to correlate…”
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High-speed InAIAs/InGaAs HBTs on 4-inch S.I. GaAs substrates by Yakihara, T., Oka, S., Kobayashi, S., Fujita, T., Miura, A.

“…In this paper, we describe high-speed InAlAs/InGaAs HBTs on 4-inch S.I. GaAs substrates, which were made with constitutionally graded lattice-buffer layers and…”
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Heavy-hole effective mass and valence-band offset estimated by confined states in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum well structures by Tanaka, K., Kotera, N., Nakamura, H.

“…Interband optical transitions of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum well structures were observed at room temperature in…”
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Compositionally graded C-doped In/sub 1-x/Ga/sub x/As base in InP/InGaAs D-HBTs grown by MOCVD with low base sheet resistance and high current gain by Ohkubo, M., Osabe, J., Ikeda, N., Ninomiya, T.

“…MOCVD-grown carbon (C)-doped InGaAs layers using CBr/sub 4/ as a C source were investigated with the van der Pauw method and PL measurement. A hole…”
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InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 /spl mu/m by Carlin, J.F., Syrbu, A.V., Berseth, C.A., Behrend, J., Rudra, A., Kapon, E.

“…We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 /spl mu/m wavelength laser emission: 5 quantum well InAsP/InGaAsP…”
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Broadened waveguide, low loss 1.5 /spl mu/m InGaAsP/InP and 2 /spl mu/m InGaAsSb/AlGaAsSb laser diodes by Garbuzov, D., Menna, R., Lee, H., Martinelli, R., Connolly, J.C., Xu, L., Forrest, S.R.

“…We demonstrate that free carrier absorption in cladding layers of long wavelength (/spl lambda/=1.5 /spl mu/m and /spl lambda/=2 /spl mu/m), separate…”
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