Search Results - "Conde, J.C."

Experimental determination of La2O3 thermal conductivity and its application to the thermal analysis of a-Ge/La2O3/c-Si laser annealing by FORNARINI, L, CONDE, J. C, ALVANI, C, OLEVANO, D, CHIUSSI, S

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193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns by Gontad, F., Conde, J.C., Chiussi, S., Serra, C., González, P.

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Field-testing solutions for drinking water quality monitoring in low- and middle-income regions and case studies from Latin American, African and Asian countries by Pichel, N., Hymnô de Souza, F., Sabogal-Paz, L.P., Shah, P.K., Adhikari, N., Pandey, S., Shrestha, B.M., Gaihre, S., Pineda-Marulanda, D.A., Hincapie, M., Luwe, K., Kumwenda, S., Aguilar-Conde, J.C., Cortes, M.A.L.R.M., Hamilton, J.W.J., Byrne, J.A., Fernandez-Ibañez, P.

“…This work highlights the need for a global approach to drinking water monitoring that involves facing several critical issues. Field tests that perform to very…”
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193nm Excimer laser processing of Si/Ge/Si(100) micropatterns by Gontad, F., Conde, J.C., Chiussi, S., Serra, C., González, P.

“…•Crystalline SiGe circular microstructures were grown by laser assisted techniques.•Laser annealing enhances the microstructures aspect ratio.•Ultrafast…”
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Theoretical and experimental analysis of high power diode laser (HPDL) hardening of AISI 1045 steel by Lusquiños, F., Conde, J.C., Bonss, S., Riveiro, A., Quintero, F., Comesaña, R., Pou, J.

“…Laser surface hardening makes use of the rapid and cooling cycles produced on metals surfaces exposed to a scanning laser beam without affecting the bulk of…”
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Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers by Gontad, F., Conde, J.C., Filonovich, S., Cerqueira, M.F., Alpuim, P., Chiussi, S.

“…We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped…”
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Laser assisted formation of binary and ternary Ge/Si/Sn alloys by Stefanov, S., Conde, J.C., Benedetti, A., Serra, C., Werner, J., Oehme, M., Schulze, J., Chiussi, S.

“…Binary and ternary Si/Ge/Sn alloys were epitaxially grown on virtual Germanium buffer layers using pulsed laser induced epitaxy with a 193nm Excimer laser…”
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FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films by Conde, J.C., Martín, E., Stefanov, S., Alpuim, P., Chiussi, S.

“…► nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. ► UV-ELA technique causes a rapid…”
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Experimental determination of La 2O 3 thermal conductivity and its application to the thermal analysis of a-Ge/La 2O 3/c-Si laser annealing by Fornarini, L., Conde, J.C., Alvani, C., Olevano, D., Chiussi, S.

“…Rare earth oxides are emerging candidates for gate oxide films as they have high dielectric constants as well as promising crystal and electronic structures…”
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Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100) by Conde, J.C., Martín, E., Gontad, F., Chiussi, S., Fornarini, L., León, B.

“…A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous…”
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Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers by Conde, J.C., Chiussi, S., Martín, E., Gontad, F., Fornarini, L., Leon, B.

“…In this manuscript, a 3-D axisymmetric model for the heteroepitaxial growth induced by irradiating thin patterned amorphous hydrogenated silicon (a-Si:H) and…”
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Numerical simulation of the UV-excimer laser assisted modification of amorphous hydrogenated Si/Ge bilayers to graded epitaxial heterostructures by Conde, J.C., Fornarini, L., Chiussi, S., Gontad, F., González, P., Leon, B., Martelli, S.

“…This manuscript presents a numerical analysis of the Excimer Laser Annealing and Crystallization induced in a set of amorphous hydrogenated silicon (a-Si:H)…”
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Numerical analysis of Excimer laser assisted processing of multi-layers for the tailored dehydrogenation of amorphous and nano-crystalline silicon films by Fornarini, L., Conde, J.C., Chiussi, S., Gontad, F., Leon, B., Martelli, S.

“…The application of the striking electrical and optical properties of amorphous and nano-crystalline silicon in photovoltaic, photonic and nano-electronic…”
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Analysis of excimer laser annealing of amorphous SiGe on La 2O 3//Si structures by Fornarini, L., Conde, J.C., S.Chiussi, Gonzalez, P., Leon, B., Martelli, S.

“…The reduction of complementary metal oxide semiconductor dimensions through transistor scaling is in part limited by the SiO 2 dielectric layer thickness…”
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Analysis of excimer laser annealing of amorphous SiGe on La2O3//Si structures by FORNARINI, L, CONDE, J. C, CHIUSSI, S, GONZALEZ, P, LEON, B, MARTELLI, S

“…The reduction of complementary metal oxide semiconductor dimensions through transistor scaling is in part limited by the SiO2 dielectric layer thickness. Among…”
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Analytical and numerical calculations of the temperature distribution in Si and Ge targets irradiated by excimer lasers by Conde, J.C., González, P., Lusquiños, F., Chiussi, S., Serra, J., León, B.

“…The calculations of the temperature distribution induced by excimer lasers in silicon and germanium by using different mathematical approaches are presented…”
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Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser by Conde, J.C., González, P., Lusquiños, F., Chiussi, S., Serra, J., León, B.

“…In this work, the finite elements analysis using ANSYS ® (8.0) of the heteroepitaxial SiGe alloy formation induced by excimer lasers is presented. The…”
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Analysis of plume deflection in the silicon laser ablation process by CONDE, J. C, GONZALEZ, P, LUSQUINOS, F, CHIUSSI, S, SERRA, J, LEON, B

“…Changes in target surface morphology and ablation plume direction have been experimentally observed during the initial stages of the silicon laser ablation…”
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Finite element analysis of the initial stages of the laser ablation process by Conde, J.C, Lusquiños, F, González, P, Serra, J, León, B, Dima, A, Cultrera, L, Guido, D, Zocco, A, Perrone, A

“…The growth of thin films by pulsed-laser deposition involves extremely complex physical processes. The study of different aspects of the basic mechanisms of…”
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Laser ablation of silicon and copper targets. Experimental and finite elements studies by CONDE, J. C, LUSQUINOS, F, GONZALEZ, P, SERRA, J, LEON, B, CULTRERA, L, GUIDO, D, PERRONE, A

“…The ablation process induced by excimer lasers is a collective phenomenon that basically involves two phenomena: the laser radiation--matter interaction and…”
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