Electrical properties of porous silicon/polypyrrole heterojunctions

Electrical properties of porous silicon/polypyrrole heterojunctions

Heterojunctions of porous silicon (PS) with polypyrrole (PPy) have been prepared and characterized. PS was formed by electrochemical anodization of p-type and n-type crystalline silicon (c-Si) wafers and PPy by electropolymerization of pyrrole. Current–voltage ( I– V) characterizations of different...

Full description

Saved in:
Bibliographic Details
Published in:Solar energy materials and solar cells Vol. 90; no. 15; pp. 2413 - 2420
Main Authors: Concepción Arenas, M., Hu, Hailin, Antonio del Río, J., Sánchez, Aarón, Nicho, M.E.
Format: Journal Article Conference Proceeding
Language:English
Published: Amsterdam Elsevier B.V 22-09-2006
Elsevier
Subjects:
Applied sciences
Electrical properties
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Photovoltaic effect
Polypyrrole
Porous silicon
Solar cells. Photoelectrochemical cells
Solar energy
Photovoltaic effect
Electrical properties
Porous silicon
Polypyrrole
Silicon solar cells
Open circuit
Short circuit currents
Voltage current curve
Crystalline material
Anodizing
Energetic efficiency
Performance
Pyrrole polymer
Heterojunction
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Heterojunctions of porous silicon (PS) with polypyrrole (PPy) have been prepared and characterized. PS was formed by electrochemical anodization of p-type and n-type crystalline silicon (c-Si) wafers and PPy by electropolymerization of pyrrole. Current–voltage ( I– V) characterizations of different PS/PPy structures were obtained in dark and under illumination. PPy forms a rectifying contact with PS layer on p-type c-Si substrate, but photovoltage was found in the heterojunctions of PPy on n-type c-Si with an open circuit of V oc = 135 mV , a fill factor of FF=0.25, a short circuit current density of J sc=8.58 mA/cm 2 and an energy conversion efficiency of n c=0.078%. However, when porous silicon powder is added between n-Si and PPy, the photovoltaic performance of this novel junction was significantly improved, giving V oc = 255 mV , J sc=54.4 mA/cm 2, FF=0.26 and n c=1.8%. By fitting the I– V curves with the modified diode standard equation, the serial resistance of n-Si/PPy junction was about 10 KΩ and of 1 KΩ for n-Si/PS(powder)/PPy junction.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2006.03.014