Search Results - "Compagnoni, Christian Monzio"
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1
Reviewing the Evolution of the NAND Flash Technology
Published in Proceedings of the IEEE (01-09-2017)“…This paper reviews the recent historical trends of the NAND Flash technology, highlighting the evolution of its main parameters and explaining what allowed it…”
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2
Reliability of NAND Flash Arrays: A Review of What the 2-D-to-3-D Transition Meant
Published in IEEE transactions on electron devices (01-11-2019)“…This paper reviews what changed in the reliability of NAND Flash memory arrays after the paradigm shift in technology evolution determined by the transition…”
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3
Memristive and CMOS Devices for Neuromorphic Computing
Published in Materials (01-01-2020)“…Neuromorphic computing has emerged as one of the most promising paradigms to overcome the limitations of von Neumann architecture of conventional digital…”
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4
Unsupervised Learning by Spike-Timing-Dependent Plasticity in a Mainstream NOR Flash Memory Array-Part I: Cell Operation
Published in IEEE transactions on electron devices (01-11-2019)“…This article and its part II demonstrate the possibility to operate a mainstream NOR Flash memory array as an artificial synaptic array learning without…”
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5
Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part I: Polysilicon-Induced Variability
Published in IEEE transactions on electron devices (01-08-2018)“…This paper presents characterization and modeling results exploring the temperature dependence of the electrical characteristics of 3-D NAND Flash strings…”
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6
Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays
Published in IEEE electron device letters (01-04-2022)“…In this letter, we present clear experimental evidence proving that a high-temperature idle/data-retention phase gives rise to a permanent intensification of…”
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7
Unsupervised Learning by Spike-Timing- Dependent Plasticity in a Mainstream NOR Flash Memory Array-Part II: Array Learning
Published in IEEE transactions on electron devices (01-11-2019)“…In this article, we show that, by exploiting the program and erase conditions identified in Part I of this article, operating a mainstream NOR Flash memory…”
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Experimental and Modeling Investigation of the Temperature Activation of TDDB in Galvanic Isolators Based on Polymeric Dielectrics
Published in IEEE transactions on dielectrics and electrical insulation (01-10-2024)“…We report experimental evidence revealing a nonmonotonic temperature dependence of time-dependent dielectric breakdown (TDDB) in galvanic isolators based on…”
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9
Variability Effects in Nanowire and Macaroni MOSFETs--Part II: Random Telegraph Noise
Published in IEEE transactions on electron devices (01-04-2020)“…In this article and in its Part I, we investigate variability effects on the threshold voltage of nanowire (NW) and Macaroni devices, focusing on random dopant…”
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10
Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays
Published in IEEE electron device letters (01-08-2018)“…This letter investigates the cycling dependence of random telegraph noise (RTN) in 3-D NAND Flash arrays. Experimental results reveal that cycling has a very…”
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Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part II: Random Telegraph Noise
Published in IEEE transactions on electron devices (01-08-2018)“…This paper investigates the temperature dependence of random telegraph noise (RTN) in 3-D NAND Flash technologies. Experimental results on memory arrays reveal…”
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12
Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions
Published in IEEE transactions on electron devices (01-09-2020)“…Although metal/ferroelectric/semiconductor tunnel junctions have been attracting widespread interest as next-generation memory devices, only limited effort has…”
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13
A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories
Published in IEEE transactions on electron devices (01-05-2016)“…We present a semianalytical model for the electrostatics and the current-voltage characteristics of Macaroni MOSFETs based on the exact solution of the Poisson…”
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14
Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca-Nanometer Flash Memories
Published in IEEE transactions on electron devices (01-08-2009)“…This paper presents a comprehensive investigation of random telegraph noise (RTN) in deca-nanometer Flash memories, considering both the nor and the nand…”
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15
Cycling-Induced Charge Trapping/Detrapping in Flash Memories-Part II: Modeling
Published in IEEE transactions on electron devices (01-12-2016)“…Starting from all the experimental evidence we presented in Part I of this work (Resnati et al., 2016), in this paper, we propose a new microscopic picture for…”
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16
Special Issue on Reliability
Published in IEEE transactions on electron devices (01-11-2019)“…Reliability is an important consideration during semiconductor technology development, which ensures that the performances of devices, circuits, and systems…”
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17
Random Telegraph Noise in 3D NAND Flash Memories
Published in Micromachines (Basel) (16-06-2021)“…In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their…”
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18
Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays
Published in IEEE journal of the Electron Devices Society (2023)“…In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal…”
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19
Discrete-Trap Effects on 3-D NAND Variability - Part I: Threshold Voltage
Published in IEEE journal of the Electron Devices Society (2024)“…In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories…”
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20
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings
Published in Journal of computational electronics (01-06-2019)“…This paper presents a physics-based compact model able to describe the time dynamics of the erase operation in three-dimensional NAND Flash strings exploiting…”
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