Search Results - "Colter, P."

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD by Hagar, B. G., Abdelhamid, M., Routh, E. L., Colter, P. C., Bedair, S. M.

“…Tunnel junctions (TJs) have recently been proposed as a solution for several III-nitride current problems and to enhance new structures. Reported III-nitride…”
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GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition by Hagar, B. G., Routh, E. L., Abdelhamid, M., Colter, P. C., Muth, J., Bedair, S. M.

“…We present metalorganic chemical vapor deposition-grown III-nitride tunnel junction (TJ) devices showing negative differential resistance (NDR) under forward…”
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High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface by Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., Colter, P. C.

“…The performance of n+-InGaP(Te)/p+-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics…”
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Overgrowth of GaN on GaN nanowires produced by mask-less etching by Frajtag, P., Hosalli, A.M., Samberg, J.P., Colter, P.C., Paskova, T., El-Masry, N.A., Bedair, S.M.

“…We report on the generation of GaN nanowires (NWs) using mask-less reactive ion etching (RIE). The NWs are believed to be the result of a high etching rate in…”
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Growth and Characterization of InxGa1−xAs/GaAs1−yPy Strained-Layer Superlattices with High Values of y (~80%) by Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., Bedair, S. M.

“…Strained-layer superlattice (SLS) structures, such as InGaAs/GaAsP lattice matched to GaAs, have shown great potential in absorption devices such as…”
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Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices by Colter, P. C., Carlin, C. Z., Samberg, J. P., Bradshaw, G. K., Bedair, S. M.

“…Strained layer superlattice (SLS) structures lattice matched to GaAs, such as InGaAs/GaAsP, use thin films to meet both the strain balance and critical layer…”
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Chest compressions are not more effective when delivered from a rescuer's preferred side by Thorne, C.J, Jones, C.M, Colter, P, Macrae, A.L, Brown, G, Hulme, J

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High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE by Fetzer, C.M., King, R.R., Colter, P.C., Edmondson, K.M., Law, D.C., Stavrides, A.P., Yoon, H., Ermer, J.H., Romero, M.J., Karam, N.H.

“…This paper focuses on the metal-organic vapor-phase epitaxy growth of 3-junction (3J) solar cells where the epitaxial Ga 0.44In 0.56P top and Ga 0.92In 0.08As…”
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Characteristics of low-temperature-grown GaN films on Si(111) by Hassan, Z., Lee, Y.C., Yam, F.K., Ibrahim, K., Kordesch, M.E., Halverson, W., Colter, P.C.

“…In this paper, we report on the characteristics of GaN films grown on Si(111) at a low temperature (200 °C) by electron cyclotron resonance (ECR)…”
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Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition by Namavar, F, Colter, P.C, Planes, N, Fraisse, B, Pernot, J, Juillaguet, S, Camassel, J

“…Investigation of porous silicon as a new compliant substrate for hetero-epitaxial deposition of 3C-SiC on silicon has been performed. The resulting layer has…”
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High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface by Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., Colter, P. C.

“…The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction…”
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Next-generation, high-efficiency III-V multijunction solar cells by King, R.R., Karam, N.H., Ermer, J.H., Haddad, N., Colter, P., Isshiki, T., Yoon, H., Cotal, H.L., Joslin, D.E., Krut, D.D., Sudharsanan, R., Edmondson, K., Cavicchi, B.T., Lillington, D.R.

“…Next-generation solar cell approaches such as AlGaInP/GaAs/GaInNAs/Ge 4-junction cells, lattice-mismatched GaInP/GaInAs/Ge, concentrator cells, and improved…”
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Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition by Zhou, W. L., Namavar, F., Colter, P. C., Yoganathan, M., Leksono, M. W., Pankove, J. I.

“…SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited…”
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Metamorphic GaInP/GaInAs/Ge solar cells by King, R.R., Haddad, M., Isshiki, T., Colter, P., Ermer, J., Yoon, H., Joslin, D.E., Karam, N.H.

“…High-efficiency, metamorphic multijunction cells have been fabricated by growing GaInP/GaInAs subcells that are lattice-mismatched to an active Ge substrate,…”
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Infrared materials for thermophotovoltaic applications by CHARACHE, G. W, EGLEY, J. L, CHOI, H. K, TURNER, G. W, WOJTCZUK, S. J, COLTER, P, SHARPS, P, TIMMONS, M, FAHEY, R. E, ZHANG, K, DEPOY, D. M, DANIELSON, L. R, FREEMAN, M. J, DZIENDZIEL, R. J, MOYNIHAN, J. F, BALDASARO, P. F, CAMPBELL, B. C, WANG, C. A

“…Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5–0.7 eV) III-V semiconductors. The use…”
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Growth and Characterization of In x Ga1−x As/GaAs1−y P y Strained-Layer Superlattices with High Values of y (~80%) by Samberg, J. P., Carlin, C. Z., Bradshaw, G. K., Colter, P. C., Bedair, S. M.

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In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs by Kussmaul, A., Vernon, S., Colter, P. C., Sudharsanan, R., Mastrovito, A., Linden, K. J., Karam, N. H., Warnick, S. C., Dahleh, M. A.

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Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate by COLTER, P. C, HUSSIEN, S. A, DIP, A, ERDOGAN, M. U, DUNCAN, W. M, BEDAIR, S. M

“…The two main problems, carbon contamination and a low growth rate, facing atomic layer epitaxy (ALE) of GaAs are addressed. A reactor was designed to process 2…”
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Growth and Characterization of In^sub x^Ga^sub 1â 'x^As/GaAs^sub 1â 'y^P^sub y^ Strained-Layer Superlattices with High Values of y (~80%) by Samberg, J P, Carlin, C Z, Bradshaw, G K, Colter, P C, Bedair, S M

“…Issue Title: 2012 Electronic Materials Conference. Guest Editors: Joshua Caldwell, Rachel Goldman, Jamie Phillips, Oana Jurchescu, Shadi Shahedipour-Sandvik,…”
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Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high-speed, rotating disk reactor by TOMPA, G. S, NELSON, C. R, SARACINO, M. A, COLTER, P. C, ANDERSON, P. L, WRIGHT, W. H, SCHMIT, J. L

“…Growth of CdTe (111) layers on GaAs (100) and GaAs (111) substrates by metalorganic chemical vapor deposition (MOCVD) has been investigated using a commercial,…”
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