Search Results - "Collart, E."

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon by Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Collart, E. J. H., Felch, S. B., Cowern, N. E. B.

“…We investigate the impact of amorphization and C co-implantation on B diffusion and activation properties after conventional spike rapid thermal annealing…”
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Suppression of phosphorus diffusion by carbon co-implantation by Pawlak, B. J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S. B., Collart, E. J. H., Cowern, N. E. B.

“…The impact of Si interstitial ( Si i ) flux suppression on the formation of P junctions by rapid thermal annealing (RTA) is demonstrated. Here we investigate…”
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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink by Hamilton, J. J., Kirkby, K. J., Cowern, N. E. B., Collart, E. J. H., Bersani, M., Giubertoni, D., Gennaro, S., Parisini, A.

“…Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical…”
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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface by Hamilton, J. J., Cowern, N. E. B., Sharp, J. A., Kirkby, K. J., Collart, E. J. H., Colombeau, B., Bersani, M., Giubertoni, D., Parisini, A.

“…The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has been investigated. Electrical and structural measurements…”
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Vacancy-engineering implants for high boron activation in silicon on insulator by Smith, A. J., Cowern, N. E. B., Gwilliam, R., Sealy, B. J., Colombeau, B., Collart, E. J. H., Gennaro, S., Giubertoni, D., Bersani, M., Barozzi, M.

“…The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly conductive ultrashallow doped regions in future…”
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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures by Van den Berg, J. A., Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, P., Noakes, T. C. Q.

“…High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of dynamic defect annealing on the damage formed in silicon…”
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Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship by Berg, J. A. van den, Carter, G., Armour, D. G., Werner, M., Goldberg, R. D., Collart, E. J. H., Bailey, P., Noakes, T. C. Q.

“…Damage distributions resulting from 0.1–2keV B+ implantation at room temperature into Si(100) to doses ranging from 1×1014 to 2×1016cm−2 have been determined…”
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Suppression of boron interstitial clusters in SOI using vacancy engineering by Smith, A.J., Colombeau, B., Gwilliam, R., Cowern, N.E.B., Sealy, B.J., Milosavljevic, M., Collart, E., Gennaro, S., Bersani, M., Barozzi, M.

“…As CMOS devices scale into the 45 nm process window, the requirements for the individual devices become even more stringent, with levels of activation well…”
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Damage accumulation and dopant migration during shallow As and Sb implantation into Si by Werner, M., van den Berg, J.A., Armour, D.G., Vandervorst, W., Collart, E.H.J., Goldberg, R.D., Bailey, P., Noakes, T.C.Q.

“…The damage evolution and concomitant dopant redistribution as a function of ion fluence during ultra shallow, heavy ion implants into Si have been investigated…”
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Quantitative analysis of the top 5 nm of boron ultra-shallow implants by Bellingham, J., Dowsett, M.G., Collart, E., Kirkwood, D.

“…Annealed ultra-shallow implants often develop sharp features in the top few nanometres of the wafer during thermal processing. In a SIMS depth profile, much of…”
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Elemental B distributions and clustering in low-energy B+ ion-implanted Si by Wang, T.-S., Cullis, A. G., Collart, E. J. H., Murrell, A. J., Foad, M. A.

“…A detailed study is presented of characteristic elemental B distributions in Si produced by low-energy B+ ion implantation and annealing. Implant concentration…”
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Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ by Hamilton, J.J., Collart, E.J.H., Colombeau, B., Bersani, M., Giubertoni, D., Sharp, J.A., Cowern, N.E.B., Kirkby, K.J.

“…For CMOS technology, generations beyond the 65 nm node a major goal is achieving highly activated, ultra-shallow and abrupt profiles. In the case of p-type…”
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Advanced front-end processes for the 45 nm CMOS technology node by Collart, E.J.H., Felch, S.B., Graoui, H., Kirkwood, D., Tallavarjula, S., Berg, J.A. Van den, Hamilton, J., Cowern, N.E.B., Kirkby, K.J.

“…The process development focus for 45 nm technology node is very firmly on the transistor and substrate. Formation of ultra-shallow, abrupt and well-activated…”
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Indium clustering in a silicon matrix in the presence of carbon co-implantation by Gennaro, S., Collart, E., Wang, Y., Sealy, B.J., Gwilliam, R.M.

“…Implantation of indium in silicon has attracted great interest for its possible applications in the microelectronics industry to produce ultra-shallow doped…”
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Strategies for high-throughput gene cloning and expression by Dieckman, L J, Hanly, W C, Collart, E R

“…High-throughput approaches for gene cloning and expression require the development of new, nonstandard tools for use by molecular biologists and biochemists…”
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Critical role of iron overload in the increased susceptibility of haemodialysis patients to bacterial infections. Beneficial effects of desferrioxamine by Tielemans, C L, Lenclud, C M, Wens, R, Collart, F E, Dratwa, M

“…Iron overload, which is a common complication in haemodialysis patients, is known to enhance bacterial growth and virulence, and to alter phagocytosis. We…”
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5667 PULMONARY CONGESTION IN HEMODIALYSIS: PREVALENCE, DYNAMICS AND ASSOCIATED FACTORS by Saleh, Kaysi, Pacha, Bakhtar, Antoine, Marie Hélène, De Prez, Eric, Collart, Frederic E, Nortier, Joelle

“…Abstract Background and Aims Lung ultrasound (LUS) helps detecting pulmonary congestion (PC) among haemodialysis (HD) patients. This study investigated the…”
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Arsenic doping in Si-MBE using low energy ion implantation (LEII) by Collart, E.J.H., Gravesteijn, D.J., Lathouwers, E.G.C., Kersten, W.J.

“…Arsenic doping using a new, high current (> 100 μA), low energy (down to 250 eV) implanter is presented. Using this set-up it is possible to homogeneously dope…”
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Boron pile-up phenomena during ultra shallow junction formation by Ferri, M., Solmi, S., Giubertoni, D., Bersani, M., Hamilton, J.J., Kah, M., Cowern, N.E.B., Kirkby, K., Collart, E.J.H.

“…The redistribution during annealing of low-energy B implants in SOI structures and in bulk Si have been investigated by comparing Secondary Ion Mass…”
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Citrate anticoagulation for hemodialysis patients at risk of bleeding by Collart, F E, Tielemans, C L, Wens, R, Dratwa, M

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