Search Results - "Colgan, E.G."

A Practical Implementation of Silicon Microchannel Coolers for High Power Chips by Colgan, E.G., Furman, B., Gaynes, M., Graham, W.S., LaBianca, N.C., Magerlein, J.H., Polastre, R.J., Rothwell, M.B., Bezama, R.J., Choudhary, R., Marston, K.C., Toy, H., Wakil, J., Zitz, J.A., Schmidt, R.R.

“…This paper describes a practical implementation of a single-phase Si microchannel cooler designed for cooling very high power chips such as microprocessors…”
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Formation and stability of silicides on polycrystalline silicon by Colgan, E.G., Gambino, J.P., Hong, Q.Z.

“…Silicides are widely used in silicon integrated circuits as contacts and interconnections. In many applications silicides are used on polycrystalline silicon…”
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Diffusion markers in thin-film VA13, Co2Al9, CrAl7, MoAl12, and Ni3Al formation by Colgan, E.G., Mayer, J. W.

“…The dominant diffusing species in VA13, Co2Al9, CrAl7, and MoAl12 formation was determined. These are the initial phases to form in metal-Al reactions and the…”
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Nickel silicide thermal stability on polycrystalline and single crystalline silicon by Colgan, E.G., Gambino, J.P., Cunningham, B.

“…The thermal stability of NiSi on polycrystalline silicon (poly-Si) or single crystalline silicon on sapphire (SOS) substrates has been investigated with…”
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Selective CVD-W for capping damascene Cu lines by Colgan, E.G.

“…The use of selective chemical vapor deposited tungsten (CVD-W) to cap Cu lines in polyimide is shown to be compatible with planarization by chemical-mechanical…”
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Silicides and ohmic contacts by Gambino, J.P., Colgan, E.G.

“…Silicides and ohmic contacts are an interesting and important part of integrated circuit technology. The integration of silicides and ohmic contacts in…”
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Activation energy for Ni 2Si and NiSi formation measured over a wide range of ramp rates by Colgan, E.G.

“…The activation energies, E a, for Ni 2Si and NiSi formation were determined using in-situ resistance measurements with ramp rates ranging from 0.01 °C s −1 to…”
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Activation energy for Pt 2 Si and PtSi formation measured over a wide range of ramp rates by Colgan, E.G.

“…The activation energies, E a 's, for Pt 2 Si and PtSi formation were determined using in situ resistance measurements with ramp rates ranging from 0.4 °C/m to…”
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A practical implementation of silicon microchannel coolers for high power chips by Colgan, E.G., Furman, B., Gaynes, A., Graham, W., LaBianca, N., Magerlein, J.H., Polastre, R.J., Rothwell, M.B., Bezama, R.J., Choudhary, R., Marston, K., Toy, H., Wakil, J., Zitz, J.

“…The paper describes a practical implementation of a single-phase Si microchannel cooler designed for cooling very high power chips such as microprocessors…”
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Activation energy for Ni2Si and NiSi formation measured over a wide range of ramp rates by COLGAN, E. G

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Activation energy for Pt2Si and PtSi formation measured over a wide range of ramp rates by Colgan, E.G.

“…The activation energies, Ea's, for Pt2Si and PtSi formation were determined using in situ resistance measurements with ramp rates ranging from 0.4 °C/m to 100…”
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Diffusion markers in thin-film VAl 3 , Co 2 Al 9 , CrAl 7 , MoAl 12 , and Ni 3 Al formation by Colgan, E.G., Mayer, J.W.

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The effect of Cu on morphological instabilities in thin Al/Pt films by Colgan, E.G., Blanpain, B.

“…Al films deposited on Pt layers developed voids after annealing at 250 °C. The amount of Al in the area surrounding the voids increased relative to the…”
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Thermal modeling of on-chip interconnects and 3D packaging using EM tools by Jiang, L., Kolluri, S., Rubin, B.J., Smith, H., Colgan, E.G., Scheuermann, M.R., Wakil, J.A., Deutsch, A., Gill, J.

“…The green (low power) chip design demands dramatic thermal and electrical simulation capabilities. In this paper, a novel thermal simulation approach for…”
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System-on-package (SOP) technology, characterization and applications by Knickerbocker, J.U., Andry, P.S., Buchwalter, L.P., Colgan, E.G., Cotte, J., Gan, H., Horton, R.R., Sri-Jayantha, S.M., Magerlein, J.H., Manzer, D., McVicker, G., Patel, C.S., Polastre, R.J., Sprogis, E.S., Tsang, C.K., Webb, B.C., Wright, S.L.

“…A silicon-based system-on-package (SOP) is described. Novel capabilities of SOP are expected to enable lower cost, more efficient and higher performance…”
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Package design and measurement of 10 Gbps laser diode on high-speed silicon optical bench by Schuster, C., Kuchta, D.M., Colgan, E.G., Cohen, G.M., Trewhella, J.M.

“…In this paper the electrical package design for a 10 Gbps laser diode on a silicon optical bench will be presented. Specifically the wideband impedance…”
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Novel packaging of parallel-optical interconnects for high-end servers by Rosenau, S.A., Simon, J., Windover, L.A.B., Law, B., Flower, G.M., DeGroot, E., Grot, A., Nystrom, M.J., Chao-Kun Lin, Tandon, A., Djordjev, K., Tan, M.R.T., Mirkarimi, L.W., Gruhlke, R.W., Hui Xia, Rankin, G., Ali, M.E., Lemoff, B.E., Giboney, K.S., Dolfi, D.W., Colgan, E.G., Furman, B., Magerlein, J., Schaub, J., Stigliani, D., Torok, J., Becker, D., Katopis, G., Dyckman, W., O'Connor, D.

“…A novel packaging concept is demonstrated where parallel-optical subassemblies are mounted on the same substrate as processor chips for processor-to-processor…”
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Direct integration of dense parallel optical interconnects on a first level package for high-end servers by Colgan, E.G., Furman, B., Magerlein, J.H., Schaub, J., Schow, C., Stigliani, D., Torok, J., Benner, A., Becker, D., Katopis, G., Abshier, J., Dyckman, W., Lemoff, B.E., Ali, M.E., Panotopoulos, G., de Groot, E., Flower, G.M., Rankin, G.H., Schmit, A.J., Djordjev, K.D., Tan, M.R.T., Tandon, A., Gong, W., Telia, R.P., Law, B., Rosenau, S.A., Buckman Windover, L.A., Dolfi, D.W.

“…The direct integration of dense 48-channel parallel multiwavelength optical transmitter and receiver subassemblies directly onto a first level package using a…”
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Thermal stability issues in copper based metallization by Jian Li, Shacham-Diamond, Y., Mayer, J.W., Colgan, E.G.

“…The thermally induced reactions in Cu/Si, Cu/metal, Cu/silicide and Cu/dielectric films have been studied by both Rutherford backscattering and Auger electron…”
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