Search Results - "Coldren, C. W."

Tunable semiconductor lasers: a tutorial by Coldren, L.A., Fish, G.A., Akulova, Y., Barton, J.S., Johansson, L., Coldren, C.W.

“…Tunable semiconductor lasers have been listed in numerous critical technology lists for future optical communication and sensing systems. This paper summarizes…”
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Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers by Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Harris, J.S.

“…We report, for the first time, room temperature continuous-wave (CW) operation of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a…”
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High-speed, optically controlled surface-normal optical switch based on diffusive conduction by Yairi, M. B., Coldren, C. W., Miller, D. A. B., Harris, J. S.

“…We report a surface-normal optically controlled optoelectronic modulator made from a reversed biased p-i (multiple quantum well)-n GaAs/AlGaAs structure with…”
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Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy by Spruytte, S.G, Larson, M.C, Wampler, W, Coldren, C.W, Petersen, H.E, Harris, J.S

“…Group III–nitride–arsenides are promising materials for long wavelength opto-electronic devices grown on GaAs substrates. The growth of nitride–arsenides was…”
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Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter by Akulova, Y.A., Fish, G.A., Ping-Chiek Koh, Schow, C.L., Kozodoy, P., Dahl, A.P., Nakagawa, S., Larson, M.C., Mack, M.P., Strand, T.A., Coldren, C.W., Hegblom, E., Penniman, S.K., Wipiejewski, T., Coldren, L.A.

“…We report on a widely tunable transmitter based on a sampled-grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with a semiconductor…”
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Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy by Coldren, C. W., Spruytte, S. G., Harris, J. S., Larson, M. C.

“…Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs…”
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Low threshold current continuous-wave GaInNAs/GaAs VCSELs by Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Harris, J.S.

“…Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission…”
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Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE) by Spruytte, S.G., Coldren, C.W., Larson, M.C., Harris, J.S.

“…Group III-nitride-arsenides were grown by MBE employing a nitrogen radio frequency (rf) plasma. To improve the luminescence efficiency, both GaNAs and GaInNAs…”
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Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy by SPRUYTTE, S. G, LARSON, M. C, WAMPLER, W, COLDREN, C. W, PETERSEN, H. E, HARRIS, J. S

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GaAs/AlGaAs multiple-quantum-well in-line fiber intensity modulator by Mao, Erji, Coldren, Christopher W., Harris, James S., Yankelevich, Diego R., Solgaard, Olav, Knoesen, André

“…We demonstrate a GaAs/AlGaAs multiple-quantum-well in-line fiber optic intensity modulator. Based on evanescent wave coupling between a GaAs/AlGaAs…”
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Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy by Coldren, C.W., Spruytte, S.G., Harris, J.S., Larson, M.C.

“…Employing InGaNAs materials, low wavelength active regions with emission at 1.3 /spl mu/m have been developed on GaAs substrates. Broad area, single quantum…”
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Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period by Yairi, M.B., Demir, H.V., Coldren, C.W., Harris, J.S., Miller, D.A.D.

“…Using surface-normal pulses, a low-power, optically controlled optical gate incorporating two stacked AlGaAs diodes opens and closes within 20 picoseconds with…”
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Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics by Spruytte, S.G., Larson, M.C., Wampler, W., Coldren, C.W., Harris, J.S.

“…Nitride-arsenides are promising materials for long wavelength opto-electronic devices grown on GaAs substrates. The photoluminescence intensity of GaNAs and…”
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