Search Results - "Coic, Y.M."

A study of radiation vulnerability of ferroelectric material and devices by Coic, Y.M., Musseau, O., Leray, J.L.

“…The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in…”
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Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions by Musseau, O., Leray, J.L., Ferlet, V., Umbert, A., Coic, Y.M., Hesto, P.

“…The authors have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion model) various charge collection mechanisms in…”
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From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena by Leray, J.L., Dupont-Nivet, E., Musseau, O., Coic, Y.M., Umbert, A., Lalande, P., Pere, J.F., Auberton-Herve, A.J., Bruel, M., Jaussaud, C., Margail, J., Giffard, B., Truche, R., Martin, F.

“…A silicon-on-insulator (SOI) technology with a hardened variant is presented, focusing on some of the weak points that could impede the progress of SOI toward…”
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Induction of a Melanoma‐Specific Antibody Response by a Monovalent, but not a Divalent, Synthetic GM2 Neoglycopeptide by Bay, S., Fort, S., Birikaki, L., Ganneau, C., Samain, E., Coïc, Y‐M., Bonhomme, F., Dériaud, E., Leclerc, C., Lo‐Man, R.

“…Human tumor cell‐specific antibodies were induced in mice after immunization with a synthetic glycopeptide, which is based on the GM2 ganglioside carbohydrate…”
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SEU in SOI SRAMs-a static model by Musseau, O., Leray, J.L., Ferlet-Cavrois, V., Coic, Y.M., Giffard, B.

“…The sensitivity to heavy ions of CMOS/SOI devices is mostly determined by the parasitic bipolar transistor that amplifies the deposited charge. A simple static…”
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CMOS/SOI hardening at 100 Mrad (SiO/sub 2/) by Leray, J.L., Dupont-Nivet, E., Pere, J.F., Coic, Y.M., Raffaelli, M., Auberton-Herve, A.J., Bruel, M., Giffard, B., Margail, J.

“…Hardened CMOS silicon-on-insulator (SOI) 29101 microprocessor elementary cells and transistors were irradiated at levels between 10 Mrad(SiO/sub 2/) and 1…”
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Comparison of the sensitivity to heavy ions of SRAM's in different SIMOX technologies by Ferlet-Cavrois, V., Musseau, O., Leray, J.L., Coic, Y.M., Lecarval, G., Guichard, E.

“…We propose a simple model to evaluate the sensitivity to heavy ions of SRAM's in different CMOS/SIMOX technologies. The critical Linear Energy Transfer LETc…”
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Comparison of the Sensitivity to Heavy Ions of Sram in Different Simox Technologies by Ferlet-Cavrois, V., Musseau, O., Leray, J.L., Coic, Y.M., Lecarval, G., Guichard, E.

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Ionizing effects in vitreous silica and SOI SIMOX buried oxide by study of trapped charges and paramagnetic defect creation by Leray, J.L., Coic, Y.M., Devine, R.A.B., Margail, J.

“…Presents experimental data concerning the relationship between trapped charge and electron spin resonance E' signal after irradiation. For this purpose, two…”
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Insulator photocurrents: application to dose rate hardening of CMOS/SOI integrated circuits by Dupont-Nivet, E., Coic, Y.M., Flament, O., Tinel, F.

“…Irradiation of insulators with a pulse of high energy X-rays can induce photocurrents in the interconnections of integrated circuits. We present, here, a new…”
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Heavy ion sensitivity of a SRAM in SOI bulk-like technology by Ferlet-Cavrois, V., Musseau, O., Leray, J.L., Coic, Y.M., Pelloie, J.L.

“…The sensitivity to heavy ions of a thick SOI technology compatible with bulk design rules is studied in this paper. A model is built, relying on two basic…”
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1H- and 2H-NMR studies of a fragment of PMP1, a regulatory subunit associated with the yeast plasma membrane H +-ATPase. Conformational properties and lipid-peptide interactions by Beswick, V., Roux, M., Navarre, C., Coïc, Y.M., Huynh-Dinh, T., Goffeau, A., Sanson, A., Neumann, J.M.

“…PMP1 is a 38-residue polypeptide associated with the yeast plasma membrane H +-ATPase, found to regulate the enzyme activity. To investigate the molecular…”
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