Search Results - "Coffa, S."

Refine Results
  1. 1

    Carbonization and transition layer effects on 3C-SiC film residual stress by Anzalone, R., Litrico, G., Piluso, N., Reitano, R., Alberti, A., Fiorenza, P., Coffa, S., La Via, F.

    Published in Journal of crystal growth (01-09-2017)
    “…•The dependence of the voids density on the C/H ratio in the carbonization process is studied.•The effect of the low temperature buffer layer on the voids…”
    Get full text
    Journal Article
  2. 2

    Coupled Monte Carlo-Poisson method for the simulation of particle-particle effects in dielectrophoretic devices by La Magna, A., Camarda, M., Deretzis, I., Fisicaro, G., Coffa, S.

    Published in Applied physics letters (26-03-2012)
    “…Simulations can aid to bridge the gap between the proof-of-concept stage and the engineering of dielectrophoretic devices. We present a simulation method…”
    Get full text
    Journal Article
  3. 3

    Room-temperature electroluminescence from Er-doped crystalline Si by Franzò, G., Priolo, F., Coffa, S., Polman, A., Carnera, A.

    Published in Applied physics letters (25-04-1994)
    “…We have obtained room-temperature electroluminescence (EL) at ∼1.54 μm from Er and O co-doped crystalline p-n Si diodes fabricated by ion implantation, under…”
    Get full text
    Journal Article
  4. 4

    High efficiency and fast modulation of Er-doped light emitting Si diodes by Coffa, S., Franzò, G., Priolo, F.

    Published in Applied physics letters (30-09-1996)
    “…We demonstrate that the electrical excitation of Er ions incorporated within the depletion layer of a p+−n+ Si diode allows one to simultaneously obtain…”
    Get full text
    Journal Article
  5. 5
  6. 6

    Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si by Spinella, C., Coffa, S., Bongiorno, C., Pannitteri, S., Grimaldi, M. G.

    Published in Applied physics letters (10-01-2000)
    “…The structural and optical properties of β-FeSi2 precipitates in Si have been analyzed. Float zone Si samples were implanted at 250 °C with 350 keV Fe ions to…”
    Get full text
    Journal Article
  7. 7

    Design, fabrication, and testing of an integrated Si-based light modulator by Sciuto, A., Libertino, S., Alessandria, A., Coffa, S., Coppola, G.

    Published in Journal of lightwave technology (01-01-2003)
    “…We have fabricated and characterized a novel Si-based light modulator working at the standard communication wavelength of 1.5 /spl mu/m. It consists of a…”
    Get full text
    Journal Article
  8. 8
  9. 9

    Quantitative electron energy loss spectroscopy of si nanoclusters embedded in SiOx by NICOTRA, G, BONGIORNO, C, CARISTIA, L, COFFA, S, SPINELLA, C

    Published in Microelectronic engineering (01-03-2007)
    “…We have used a methodology, based on electron energy loss spectroscopy combined with energy filtered images, which allows us to quantify the clustered silicon…”
    Get full text
    Conference Proceeding Journal Article
  10. 10

    Adding semantics to gene expression profiles: new tools for drug discovery by Manganaro, V, Paratore, S, Alessi, E, Coffa, S, Cavallaro, S

    Published in Current medicinal chemistry (01-01-2005)
    “…Gene expression profiles are unveiling a wealth of new potential drug targets for a wide range of diseases, offering new opportunities for drug discoveries…”
    Get more information
    Journal Article
  11. 11

    Early genomics of learning and memory: a review by Paratore, S., Alessi, E., Coffa, S., Torrisi, A., Mastrobuono, F., Cavallaro, S.

    Published in Genes, brain and behavior (01-04-2006)
    “…The characterization of the molecular mechanisms whereby our brain codes, stores and retrieves memories remains a fundamental puzzle in neuroscience. Despite…”
    Get full text
    Journal Article
  12. 12

    Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 μm by Kik, P G, Polman, A, Libertino, S, Coffa, S

    Published in Journal of lightwave technology (01-05-2002)
    “…A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an…”
    Get full text
    Journal Article
  13. 13

    Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si by Terrasi, A., Franzò, G., Coffa, S., Priolo, F., D’Acapito, F., Mobilio, S.

    Published in Applied physics letters (31-03-1997)
    “…We present extended x-ray absorption fine structure (EXAFS) analyses of the Er LIII edge in Er-doped (100) Si samples. The samples were prepared by multiple…”
    Get full text
    Journal Article
  14. 14

    Experimental evidences of carrier distribution and behavior in frequency in a BMFET Modulator by Sciuto, A., Libertino, S., Coffa, S., Coppola, G., Iodice, M.

    Published in IEEE transactions on electron devices (01-11-2005)
    “…We propose a novel method to monitor the carrier plasma distribution in a bipolar mode field effect transistor light modulator, using standard emission…”
    Get full text
    Journal Article
  15. 15
  16. 16

    Accelerated Monte Carlo algorithms for defect diffusion and clustering by La Magna, A, Coffa, S

    Published in Computational materials science (2000)
    “…We present a hierarchy of accelerate Monte Carlo (MC) algorithms which can be used to investigate the kinetic evolution of systems consisting of interacting…”
    Get full text
    Journal Article
  17. 17

    Analytical tight-binding calculations for optical absorption in single wall carbon nanotubes by Buonocore, F., Vinciguerra, V., Coffa, S.

    Published in Physica Status Solidi (b) (01-09-2004)
    “…We present our calculations of the optical absorption for dipole direct transitions in the tight binding zone folding scheme for single wall carbon nanotubes…”
    Get full text
    Journal Article
  18. 18

    A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon by Strobel, M., La Magna, A., Coffa, S.

    “…A kinetic 3D lattice Monte-Carlo (MC) model is introduced, which allows to describe the evolution of boron-rich silicon, especially the formation of…”
    Get full text
    Journal Article
  19. 19
  20. 20

    Efficient electroluminescence from rare earth doped MOS diodes by Wang, S., Coffa, S., Carius, R., Buchal, Ch

    “…Efficient infra-red and visible electroluminescence (EL) has been obtained from implanted rare earth ions in the SiO 2 of a silicon-metal-oxide-semiconductor…”
    Get full text
    Journal Article Conference Proceeding