Search Results - "Clinger, Laura E."

Structure–property relationships of aramid fibers via X-ray scattering and atomic force microscopy by Roenbeck, Michael R., Cline, Julia, Wu, Vincent, Afshari, Mehdi, Kellner, Steve, Martin, Patrick, Londono, Juan David, Clinger, Laura E., Reichert, David, Lustig, Steven R., Strawhecker, Kenneth E.

“…Real-space methods of characterizing high-performance fibers’ inherent morphologies will greatly enhance our understanding of the key structural features…”
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Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles by Selezneva, Ekaterina, Clinger, Laura E., Ramu, Ashok T., Pernot, Gilles, Buehl, Trevor E., Favaloro, Tela, Bahk, Je-Hyeong, Bian, Zhixi, Bowers, John E., Zide, Joshua M. O., Shakouri, Ali

“…Thermoelectric transport properties of InGaAs with a high concentration of embedded semimetallic TbAs nanoparticles were studied in a 300–600 K temperature…”
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High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material by Tew, Bo E., Vempati, Pratyusha, Clinger, Laura E., Bomberger, Cory C., Halaszynski, Nicole I., Favaloro, Tela, Seol, Jae H., Feser, Joseph P., Majumdar, Arun, Shakouri, Ali, Bowers, John E., Bahk, Je‐Hyeong, Zide, Joshua M. O.

“…Lanthanide monopnictide (Ln-V) nanoparticles embedded within III–V semiconductors, specifically in In0.53Ga0.47As, are interesting for thermoelectric…”
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High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material by Tew, Bo E., Vempati, Pratyusha, Clinger, Laura E., Bomberger, Cory C., Halaszynski, Nicole I., Favaloro, Tela, Seol, Jae H., Feser, Joseph P., Majumdar, Arun, Shakouri, Ali, Bowers, John E., Bahk, Je‐Hyeong, Zide, Joshua M. O.

“…Lanthanide monopnictide (Ln‐V) nanoparticles embedded within III–V semiconductors, specifically in In0.53Ga0.47As, are interesting for thermoelectric…”
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Incompatibility of standard III–V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration by Ramu, Ashok T., Clinger, Laura E., Dongmo, Pernell B., Imamura, Jeffrey T., Zide, Joshua M. O., Bowers, John E.

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Incompatibility of standard III–V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration by Ramu, Ashok T., Clinger, Laura E., Dongmo, Pernell B., Imamura, Jeffrey T., Zide, Joshua M. O., Bowers, John E.

“…Terbium-doped InGaAs with a high terbium concentration shows promise as a high-efficiency thermoelectric material, with the thermal conductivity dropping to…”
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Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles by Selezneva, Ekaterina, Clinger, Laura E., Ramu, Ashok T., Pernot, Gilles, Buehl, Trevor E., Favaloro, Tela, Bahk, Je-Hyeong, Bian, Zhixi, Bowers, John E., Zide, Joshua M. O., Shakouri, Ali

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