Search Results - "Claussen, S. A."

Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications by Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. B.

“…We propose a robust fabrication process for growing Ge and Ge-based heterostructures in growth windows with Si sidewalls which can be applied to growth in…”
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Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides by Shen Ren, Yiwen Rong, Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. B.

“…We report a Ge/SiGe quantum well waveguide electroabsorption modulator that is monolithically integrated with silicon-on-insulator waveguides. The active…”
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Selective-area growth of Ge and Ge/SiGe quantum wells in 3 μm silicon-on-insulator waveguides by Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. B.

“…We demonstrate a robust process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 μm thick silicon-on-insulator waveguides,…”
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Light emission in Ge quantum wells by Fei, E. T., Yijie Huo, Shambat, G., Xiaochi Chen, Xi Liu, Claussen, S. A., Edwards, E. H., Kamins, T. I., Miller, D. A. B., Vuckovic, J., Harris, J. S.

“…We present the Ge/SiGe quantum well structure as a strong candidate for CMOS compatible light source. Photoluminescence and electroluminescence show enhanced…”
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Spot size effects in asymmetric fabry-perot electroabsorption modulators by Audet, R M, Edwards, E H, Claussen, S A, Shen Ren, Schaevitz, R K, Taşyürek, E, Miller, D A B

“…Simulations of an asymmetric Fabry-Perot modulator reveal degradation of the contrast ratio as the incident spot size is decreased. The minimum practical spot…”
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Simple electroabsorption model for silicongermanium/germanium quantum well devices by Schaevitz, R K, Roth, J E, Edwards, E H, Audet, R M, Claussen, S A, Taşyürek, E, Shen Ren, Yiwen Rong, Harris, J S, Miller, D A B

“…We present a simple model for the electroabsorption spectrum of germanium-based quantum wells, which can be used to optimize material design for modulators…”
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Ge quantum well resonator modulators by Edwards, E. H., Audet, R. M., Fei, E., Shambat, G., Schaevitz, R. K., Yiwen Rong, Claussen, S. A., Kamins, T. I., Vuckovic, J., Harris, J. S., Miller, D. A. B.

“…The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. We demonstrate…”
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Ultrafast absorption recovery in germanium/silicon-germanium quantum wells by Tasyurek, E, Claussen, S A, Roth, J E, Miller, D A B

“…We show ultrafast absorption changes in germanium-based quantum wells, attributing these to exciton bleaching, ultrafast intervalley scattering, carrier escape…”
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Simple electroabsorption calculator for germanium quantum well devices by Schaevitz, R. K., Edwards, E. H., Ren, S., Ly-Gagnon, D. S., Audet, R. M., Yiwen Rong, Claussen, S. A., Tasyurek, E., Roth, J. E., Harris, J. S., Miller, D. A. B.

“…We present a simple quantum well electroabsorption calculator (SQWEAC) for the germanium material system to facilitate optoelectronic modulator design. We show…”
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