Search Results - "Civrac, G."

CVD diamond Schottky barrier diode, carrying out and characterization by Koné, S., Civrac, G., Schneider, H., Isoird, K., Issaoui, R., Achard, J., Gicquel, A.

“…A p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented. The technologic steps required to carry out the experimental device…”
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Basic parameters and models in simulation of CVD diamond devices by Ding, H., Isoird, K., Schneider, H., Kone, S., Civrac, G.

“…In this paper, we present development TCAD Sentaurus platform design for high voltage and high temperature CVD diamond devices. For the first time, in this…”
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Photoconductive properties of lightly N-doped single crystal CVD diamond films by Secroun, A., Tallaire, A., Achard, J., Civrac, G., Schneider, H., Gicquel, A.

“…In the preparation of high power diamond photoswitches, thick (more than 100 μm) lightly nitrogen-doped single crystals were grown at LIMHP, for which…”
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Thermal Stability of Silicon Carbide Power Diodes by Buttay, C., Raynaud, C., Morel, H., Civrac, G., Locatelli, M-L, Morel, F.

“…Silicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices…”
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High performances CVD diamond Schottky barrier diode - Simulation and carrying out by Kone, S., Ding, H., Schneider, H., Isoird, K., Civrac, G.

“…We have fabricated and simulated a p-type diamond Schottky diode on homoepitaxial CVD diamond. First simulations of the device under development are presented…”
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High-temperature behavior of SiC power diodes by Buttay, C., Raynaud, C., Morel, H., Lazar, M., Civrac, G., Bergogne, D.

“…Silicon Carbide devices are in theory able to operate at very high temperatures, but many mechanisms actually lower the limit. In this paper we describe two of…”
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Concept of Novel CVD Diamond High Voltage, High Power and Study of ohmic contacts on diamond by Civrac, G., Schneider, H., Bergonzo, P., Nesladek, M., Camps, T.

“…Diamond exceptional electronic and thermal properties make it a very promising material for future applications in power electronics, especially for high…”
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