Search Results - "Ciurea, M L"
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Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Published in Scientific reports (20-03-2018)“…Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in…”
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Journal Article -
2
How morphology determines the charge storage properties of Ge nanocrystals in HfO2
Published in Scripta materialia (01-03-2016)“…The strong correlation between morphology and charge storage properties of HfO2/Ge/HfO2/Si trilayer structures was evidenced. The morphology of structures…”
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3
Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films
Published in 2022 International Semiconductor Conference (CAS) (12-10-2022)“…Ge nanoparticles in SiO 2 or Si 3 N 4 on Si pieces at 500 °C were fabricated by sputtering from Ge, SiO 2 or Si 3 N 4 targets. Transmission electron…”
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Conference Proceeding -
4
Electrical behaviour of fresh and stored porous silicon films
Published in Thin solid films (18-07-1998)“…We have measured I–V and C–V characteristics, the temperature dependence of dark currents, and thermally stimulated depolarisation currents on fresh and stored…”
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5
Effects produced by iodine irradiation on high resistivity silicon
Published in Applied physics letters (10-12-2012)“…The effects of 5 × 1011 cm−2 6+I127 ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The…”
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Journal Article -
6
CONDUCTION MECHANISMS IN SILICON-BASED NANOCOMPOSITES
Published in Journal of Optoelectronics and Advanced Materials (01-03-2004)“…Electrical conduction mechanisms in Si - SiO2 nanocomposite films were experimentally investigated and theoretically modelled. The films with silicon volume…”
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7
Morphology of Si nanocrystallites embedded in SiO2 matrix
Published in Journal of materials research (01-11-2008)“…The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron…”
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8
Trapping phenomena in silicon-based nanocrystalline semiconductors
Published in Solid-state electronics (01-10-2007)“…In this paper, the trapping phenomena in silicon-based nanocrystalline semiconductors are studied. We propose a general and complete model for optical charging…”
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Journal Article Conference Proceeding -
9
Percolation phenomena in Si-SiO2 nanocomposite films
Published in Journal of Optoelectronics and Advanced Materials (01-08-2007)“…Current-voltage characteristics of samples containing silicon nanodots embedded in an amorphous silicon dioxide matrix were investigated. A percolation…”
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10
Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films
Published in Solid-state electronics (01-10-1998)“…A quantum confinement model is proposed to explain the electrical transport properties in fresh and stored porous silicon (PS) films. In the present paper, the…”
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11
Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters
Published in Journal of Optoelectronics and Advanced Materials (01-12-2009)“…The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The…”
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12
Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon
Published in Journal of Optoelectronics and Advanced Materials (01-12-2006)“…The paper presents a quantum confinement model for the electrical transport, the phototransport and the photoluminescence phenomena in nanocrystalline silicon…”
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13
Phototransport and photoluminescence in nanocrystalline porous silicon
Published in Journal of Optoelectronics and Advanced Materials (01-08-2007)“…The paper presents the phototransport and photoluminescence investigations on nanocrystalline porous silicon. Spectral dependence curves of the phototransport…”
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14
Interface trapping states in MISIM structures, with ZnS:Mn
Published in Thin solid films (01-05-1995)“…Optical charging spectroscopy and thermally stimulated depolarization measurements were performed on metal-insulator-semiconductor insulator-metal structures…”
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15
Polypyrrole - porous silicon nanocomposites
Published in Journal of Optoelectronics and Advanced Materials (01-09-2008)“…In this work we report the synthesis and characterization of the polypyrrole - porous silicon nanocomposites. Our main goal is to control the growth of…”
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Journal Article -
16
Influence of Ge Concentration and Deposition Temperature on the Photoresponse Characteristics of Ge:SiO2 Nanocomposite Thin Films
Published in 2024 International Semiconductor Conference (CAS) (09-10-2024)“…This study examines the opto-electric characteristics of Ge:SiO 2 composite films produced via magnetron sputtering at substrate temperatures of 300°C, 400°C,…”
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Conference Proceeding -
17
Memory properties of GeZrO2 based trilayer structure
Published in 2021 International Semiconductor Conference (CAS) (06-10-2021)“…The memory properties of a trilayer structure of ZrO 2 /Ge-ZrO 2 /ZrO 2 /Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition…”
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Conference Proceeding -
18
Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering
Published in Journal of alloys and compounds (05-01-2025)“…This study investigates the fabrication of short-wavelength infrared (SWIR) photosensitive amorphous and nanocrystalline Ge1-xSnx:H thin films by magnetron…”
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Journal Article -
19
Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
Published in Applied surface science (15-06-2019)“…We investigate the effect of room-temperature hydrogen-plasma treatment on the photoconductivity of SiGe nanoparticles sandwiched within SiO2 layers. An…”
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Journal Article -
20
Near infrared photo-response of as-deposited films based on GeSn nanoparticles in Si3N4 dielectric
Published in 2023 International Semiconductor Conference (CAS) (11-10-2023)“…GeSn nanoparticles in Si 3 N 4 dielectric were obtained on a Si wafer by using a sputtering method from Ge, Sn and Si 3 N 4 targets. The structure and…”
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Conference Proceeding