Search Results - "Ciurea, M L"

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  1. 1

    Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect by Lepadatu, A.-M., Slav, A., Palade, C., Dascalescu, I., Enculescu, M., Iftimie, S., Lazanu, S., Teodorescu, V. S., Ciurea, M. L., Stoica, T.

    Published in Scientific reports (20-03-2018)
    “…Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in…”
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    Journal Article
  2. 2

    How morphology determines the charge storage properties of Ge nanocrystals in HfO2 by Slav, A., Palade, C., Lepadatu, A.M., Ciurea, M.L., Teodorescu, V.S., Lazanu, S., Maraloiu, A.V., Logofatu, C., Braic, M., Kiss, A.

    Published in Scripta materialia (01-03-2016)
    “…The strong correlation between morphology and charge storage properties of HfO2/Ge/HfO2/Si trilayer structures was evidenced. The morphology of structures…”
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    Journal Article
  3. 3

    Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films by Stavarache, I., Palade, C., Slav, A., Prepelita, P., Teodorescu, V. S., Ciurea, M. L.

    “…Ge nanoparticles in SiO 2 or Si 3 N 4 on Si pieces at 500 °C were fabricated by sputtering from Ge, SiO 2 or Si 3 N 4 targets. Transmission electron…”
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    Conference Proceeding
  4. 4

    Electrical behaviour of fresh and stored porous silicon films by Ciurea, M.L, Baltog, I, Lazar, M, Iancu, V, Lazanu, S, Pentia, E

    Published in Thin solid films (18-07-1998)
    “…We have measured I–V and C–V characteristics, the temperature dependence of dark currents, and thermally stimulated depolarisation currents on fresh and stored…”
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    Journal Article
  5. 5

    Effects produced by iodine irradiation on high resistivity silicon by Lazanu, S, Slav, A, Lepadatu, A-M, Stavarache, I, Palade, C, Iordache, G, Ciurea, M L

    Published in Applied physics letters (10-12-2012)
    “…The effects of 5 × 1011 cm−2 6+I127 ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The…”
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    Journal Article
  6. 6

    CONDUCTION MECHANISMS IN SILICON-BASED NANOCOMPOSITES by Iancu, V, Draghici, M, Jdira, L, Ciurea, M L

    “…Electrical conduction mechanisms in Si - SiO2 nanocomposite films were experimentally investigated and theoretically modelled. The films with silicon volume…”
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    Journal Article
  7. 7

    Morphology of Si nanocrystallites embedded in SiO2 matrix by Teodorescu, V.S., Ciurea, M.L., Iancu, V., Blanchin, M-G.

    Published in Journal of materials research (01-11-2008)
    “…The nanostructure of Six(SiO2)1–x films deposited on quartz substrate, where x varies from 0 to 1, was determined by high-resolution transmission electron…”
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    Journal Article
  8. 8

    Trapping phenomena in silicon-based nanocrystalline semiconductors by Ciurea, M.L., Iancu, V., Mitroi, M.R.

    Published in Solid-state electronics (01-10-2007)
    “…In this paper, the trapping phenomena in silicon-based nanocrystalline semiconductors are studied. We propose a general and complete model for optical charging…”
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    Journal Article Conference Proceeding
  9. 9

    Percolation phenomena in Si-SiO2 nanocomposite films by Stavarache, I, Ciurea, M L

    “…Current-voltage characteristics of samples containing silicon nanodots embedded in an amorphous silicon dioxide matrix were investigated. A percolation…”
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    Journal Article
  10. 10

    Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films by Iancu, V., Ciurea, M.L.

    Published in Solid-state electronics (01-10-1998)
    “…A quantum confinement model is proposed to explain the electrical transport properties in fresh and stored porous silicon (PS) films. In the present paper, the…”
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    Journal Article
  11. 11

    Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters by Lazanu, S, Ciurea, M L, Lazanu, I

    “…The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The…”
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    Journal Article
  12. 12

    Quantum confinement modeling of electrical and optical processes in nanocrystalline silicon by Ciurea, M L, Iancu, V, Stavarache, I

    “…The paper presents a quantum confinement model for the electrical transport, the phototransport and the photoluminescence phenomena in nanocrystalline silicon…”
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    Journal Article
  13. 13

    Phototransport and photoluminescence in nanocrystalline porous silicon by Iancu, V, Ciurea, M L, Stavarache, I, Teodorescu, V S

    “…The paper presents the phototransport and photoluminescence investigations on nanocrystalline porous silicon. Spectral dependence curves of the phototransport…”
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    Journal Article
  14. 14

    Interface trapping states in MISIM structures, with ZnS:Mn by Petre, D., Pintilie, I., Ciurea, M.L., Botila, T.

    Published in Thin solid films (01-05-1995)
    “…Optical charging spectroscopy and thermally stimulated depolarization measurements were performed on metal-insulator-semiconductor insulator-metal structures…”
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    Journal Article
  15. 15

    Polypyrrole - porous silicon nanocomposites by Popa, C, Turcu, R, Craciunescu, I, Nan, A, Ciurea, M L, Stavarache, I, Iancu, V

    “…In this work we report the synthesis and characterization of the polypyrrole - porous silicon nanocomposites. Our main goal is to control the growth of…”
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    Journal Article
  16. 16

    Influence of Ge Concentration and Deposition Temperature on the Photoresponse Characteristics of Ge:SiO2 Nanocomposite Thin Films by Stavarache, I., Prepelita, P., Cojocaru, O., Ciurea, M. L.

    “…This study examines the opto-electric characteristics of Ge:SiO 2 composite films produced via magnetron sputtering at substrate temperatures of 300°C, 400°C,…”
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    Conference Proceeding
  17. 17

    Memory properties of GeZrO2 based trilayer structure by Palade, C., Slav, A., Ciurea, M. L.

    “…The memory properties of a trilayer structure of ZrO 2 /Ge-ZrO 2 /ZrO 2 /Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition…”
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    Conference Proceeding
  18. 18

    Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering by Dascalescu, I., Palade, C., Lungu, G.A., Lepadatu, A.M., Teodorescu, V.S., Braic, M., Ciurea, M.L., Stoica, T., Slav, A.

    Published in Journal of alloys and compounds (05-01-2025)
    “…This study investigates the fabrication of short-wavelength infrared (SWIR) photosensitive amorphous and nanocrystalline Ge1-xSnx:H thin films by magnetron…”
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    Journal Article
  19. 19

    Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation by Sultan, M.T., Gudmundsson, J.T., Manolescu, A., Stoica, T., Ciurea, M.L., Svavarsson, H.G.

    Published in Applied surface science (15-06-2019)
    “…We investigate the effect of room-temperature hydrogen-plasma treatment on the photoconductivity of SiGe nanoparticles sandwiched within SiO2 layers. An…”
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    Journal Article
  20. 20

    Near infrared photo-response of as-deposited films based on GeSn nanoparticles in Si3N4 dielectric by Stavarache, I., Prepelita, P., Cojocaru, O., Teodorescu, V. S., Ciurea, M. L.

    “…GeSn nanoparticles in Si 3 N 4 dielectric were obtained on a Si wafer by using a sputtering method from Ge, Sn and Si 3 N 4 targets. The structure and…”
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    Conference Proceeding