Search Results - "Cisco, T."
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1
A SiGe MMIC 6-bit PIN diode phase shifter
Published in IEEE microwave and wireless components letters (01-12-2002)“…A 6-bit PIN diode phase shifter has been successfully demonstrated at microwave frequencies in a SiGe bipolar technology. A post-silicon polymer dielectric…”
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Journal Article -
2
A SiGe MMIC variable gain cascode amplifier
Published in IEEE microwave and wireless components letters (01-11-2002)“…A silicon-germanium variable gain cascode amplifier has been developed to combine the functionality of an amplifier and an attenuator into one monolithic…”
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Journal Article -
3
Broad-band SiGe MMICs for phased-array radar applications
Published in IEEE journal of solid-state circuits (01-09-2003)“…This paper reports the performances of several broad-band monolithic SiGe monolithic microwave integrated circuits (MMICs) suitable for phased-array radar…”
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Journal Article -
4
Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-1999)“…We report the effect of start epi-material variability on the performance of double-recessed power pseudomorphic high electron mobility transistors. Variation…”
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Journal Article -
5
A Compact SPDT Switch in 0.18um CMOS Process With High Linearity and Low Insertion Loss
Published in 2007 IEEE Compound Semiconductor Integrated Circuits Symposium (01-10-2007)“…A compact CMOS SPDT switch fabricated in 0.18 mum BiCMOS technology has been successfully demonstrated at X-Ku-band. The fully integrated chip exhibits a low…”
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Conference Proceeding -
6
A 55% efficiency 5 W PHEMT X-band MMIC high power amplifier
Published in GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 (1996)“…We have developed a highly efficient two stage X-band MMIC high power amplifier. Based on an optimized PHEMT device structure and a novel design approach, the…”
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Conference Proceeding -
7
Electronically Cold Microwave Artificial Resistors
Published in IEEE transactions on microwave theory and techniques (01-01-1983)“…A Iarge percentage of microwave field-effect transistors (FET's) are shown to act as a broad-band artificial resistor with a resistance of about 25 Omega when…”
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8
Three-axis digital accelerometer based wireless gait analysis with wearable System-on-Chip designs
Published in TENCON 2017 - 2017 IEEE Region 10 Conference (01-11-2017)“…Gait analysis is one of the ubiquitous procedures in assessing the progression of physical therapy; however, most clinical gait analyzers utilize bulk and…”
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Conference Proceeding -
9
Electronically Cold Microwave Artificial Resistors
Published in IEEE transactions on microwave theory and techniques (01-01-1983)“…A Iarge percentage of microwave field-effect transistors (FET's) are shown to act as a broad-band artificial resistor with a resistance of about 25 Omega when…”
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Journal Article -
10
A flip-chip high efficiency X-band HPA
Published in 1997 IEEE MTT-S International Microwave Symposium Digest (1997)“…We have developed a broad band, high efficiency, X-band MMIC HPA implemented with our flip-chip technology. The amplifier utilizes PHEMT devices to achieve…”
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Conference Proceeding -
11
SiGe MMICs for phased array radar applications
Published in The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005 (2005)“…This paper reports the performances of several broadband monolithic SiGe MMICs suitable for phased array radar applications. The amplitude and phase control…”
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Conference Proceeding -
12
Sige MMICs for phased array radar applications
Published in The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005 (2005)Get full text
Conference Proceeding -
13
Proximity Effects of Transmission Line Discontinuities
Published in S-MTT International Microwave Symposium Digest (1974)“…The proximity effects of multiple step transmission line discontinuities have been computed by a computer assisted integral equation technique and good…”
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Conference Proceeding -
14
High efficiency X-band power HBTs
Published in GaAs IC Symposium Technical Digest 1992 (1992)“…High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each…”
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Conference Proceeding -
15
High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers
Published in GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 (1995)“…A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for the fabrication of high power…”
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Conference Proceeding -
16
John T. Chambers
Published in Bloomberg businessweek (Online) (27-09-1999)“…Business Week's list of the most influential people in electronic business includes John T. Chambers, CEO of Cisco Systems, Inc. Chambers leads the No. 1…”
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Magazine Article