Rapid Thermal Annealing Process for Titanium-Silicide Contact Formation

Self-aligned refractory-metal-silicide contact has been recognized as one of the keys to realizing the performance capabilities inherent in scaled-down VLSI's. However, there still remain some problems in refining the contact formation process. This paper presents a feasible process utilizing r...

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Bibliographic Details
Published in:	1986 Symposium on VLSI Technology. Digest of Technical Papers pp. 37 - 38
Main Authors:	Natsuaki, Nobuyoshi, Chyu, Kiyonori, Suzuki, Tadashi, Kobayashi, Nobuyoshi, Hashimoto, Naotaka, Wada, Yasuo
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-1986
Subjects:	Doping Rapid thermal annealing Rapid thermal processing Rough surfaces Silicidation Silicides Substrates Surface morphology Surface roughness Temperature
Online Access:	Get full text
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Summary:	Self-aligned refractory-metal-silicide contact has been recognized as one of the keys to realizing the performance capabilities inherent in scaled-down VLSI's. However, there still remain some problems in refining the contact formation process. This paper presents a feasible process utilizing rapid thermal annealing (RTA) for refined TiSi2 contact formation from the standpoint of precise control of self-alignment, improvement of the surface/interface morphology and assurance of low-resistivity contacts to shallow junctions.