Search Results - "Chung, Chulwon"
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Endogenous PI3K/Akt and NMDAR act independently in the regulation of CREB activity in lumbosacral spinal cord in cystitis
Published in Experimental neurology (01-12-2013)“…The integral interaction of signaling components in the regulation of visceral inflammation-induced central sensitization in the spinal cord has not been well…”
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Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing
Published in Metals and materials international (01-11-2013)“…Zinc sulfide (ZnS) thin films were deposited by radio-frequency (RF) magnetron sputtering. The effects of the process parameters such as deposition time and…”
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Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix
Published in Materials science in semiconductor processing (15-08-2024)“…A study of effect of deposition condition of germanium selenide (GeSe) switching layer to Conductive bridging random access memory (CBRAM) device property was…”
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Influence of Different Annealing Ambients on the Properties of Zinc Sulfide Prepared by Atomic Layer Deposition
Published in Japanese Journal of Applied Physics (01-10-2013)“…The effects of different post annealing ambients (vacuum, O 2 , and H 2 S gases) on the chemical, structural, and optical properties of zinc sulfide (ZnS) thin…”
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Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin Film
Published in ACS applied materials & interfaces (10-11-2021)“…Neuromorphic computing has garnered significant attention because it can overcome the limitations of the current von-Neumann computing system. Analog synaptic…”
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Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial Synapses
Published in ACS applied materials & interfaces (02-12-2023)“…Analog synaptic devices have made significant advances based on various electronic materials that can realize the biological synapse properties of neuromorphic…”
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Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
Published in Applied surface science (01-11-2022)“…[Display omitted] •Ferroelectricity is significantly affected by post cooling rate.•Rapid quenching enhances remnant polarization of Al-doped HfO2 thin…”
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Analog Synaptic Transistor with Al-Doped HfO 2 Ferroelectric Thin Film
Published in ACS applied materials & interfaces (10-11-2021)Get full text
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RF-magnetron sputtered kesterite Cu2ZnSnS4 thin film using single quaternary sputtering target prepared by sintering process
Published in Journal of nanoscience and nanotechnology (01-11-2013)“…Cu2ZnSnS4 (CZTS) thin film applicable to an absorber material in compound thin film solar cells was deposited by a single quaternary sputtering target…”
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A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal--Oxide--Semiconductor Device Integration Applications
Published in Japanese Journal of Applied Physics (01-10-2012)“…Wet chemicals for etching sputtered TiN metal gate and post etch annealing on HfO 2 and HfSiON gate dielectrics were studied with metal--oxide--semiconductor…”
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