Search Results - "Chun, Ik Su"
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1
Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes
Published in IEEE transactions on nanotechnology (01-07-2008)“…Group III-V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building…”
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Journal Article -
2
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies
Published in Nature (London) (20-05-2010)“…Flexible GaAs semiconductors Although compound semiconductors like gallium arsenide have a substantial performance advantage over silicon in photovoltaic and…”
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Journal Article -
3
Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable
Published in Nano letters (01-12-2008)“…We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates using atmospheric pressure metalorganic chemical vapor…”
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Journal Article -
4
Geometry Effect on the Strain-Induced Self-Rolling of Semiconductor Membranes
Published in Nano letters (13-10-2010)“…Semiconductor micro- and nanotubes can be formed by strain-induced self-rolling of membranes. The effect of geometrical dimensions on the self-rolling behavior…”
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Journal Article -
5
Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays
Published in Nano letters (12-05-2010)“…Semiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the…”
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Journal Article -
6
DNA Detection Using Plasmonic Enhanced Near-Infrared Photoluminescence of Gallium Arsenide
Published in Analytical chemistry (Washington) (15-10-2013)“…Efficient near-infrared detection of specific DNA with single nucleotide polymorphism selectivity is important for diagnostics and biomedical research. Herein,…”
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Journal Article -
7
Ultra-thin-walled III-arsenide microtubes with embedded QW light emitters: Room temperature PL characteristics
Published in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference (01-05-2009)“…Arsenide-based III-V microtubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence characteristics of such…”
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Conference Proceeding -
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Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes
Published in Applied physics letters (21-06-2010)“…III-V microtubes and nanotubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence (PL) characteristics of such…”
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Journal Article -
9
Nanoscale three dimensional pattern formation in light emitting porous silicon
Published in Applied physics letters (12-05-2008)“…A simple and efficient method for generating light emitting three-dimensional (3D) nanoscale pattern in silicon is presented. The method is based on…”
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Journal Article -
10
Topography and refractometry of nanostructures using spatial light interference microscopy
Published in Optics letters (15-01-2010)“…Spatial light interference microscopy (SLIM) is a novel method developed in our laboratory that provides quantitative phase images of transparent structures…”
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Journal Article -
11
3D nanoscale pattern formation in porous silicon
Published in 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science (01-05-2008)“…A simple and effective processing technique for 3D nanoscale pattern formation in light emitting porous silicon is reported. The technique is based on metal…”
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Conference Proceeding
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12
Nanoscale three dimensional pattern formation in light emittingporous silicon
Published in Applied physics letters (16-05-2008)“…A simple and efficient method for generating light emitting three-dimensional (3D) nanoscale pattern in silicon is presented. The method is based on…”
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Journal Article -
13
GaAs ≪110≫ nanowires: Planar, self-aligned, twin-free, high-mobility and transfer-printable
Published in 2009 14th OptoElectronics and Communications Conference (01-07-2009)“…We present planar, self-aligned, twin-free, and high mobility GaAs semiconductor nanowires grown on (100) GaAs substrates. In addition, such planar nanowires…”
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Conference Proceeding -
14
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies
Published in Nature (London) (20-05-2010)Get full text
Journal Article -
15
Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization
Published 01-01-2011“…Strain-induced self-rolled-up semiconductor nanotubes are a new type of building block for three-dimensional architectures. Semiconductor nanotubes (SNTs) take…”
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Dissertation -
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Strain-induced self-rolling of semiconductor membranes: Effect of geometry, energetics, and kinetics
Published in CLEO: 2011 - Laser Science to Photonic Applications (01-05-2011)“…Semiconductor micro- and nanotubes can be formed by strain-induced self-rolling of membranes. The geometry effect on the final rolling direction of In x Ga 1-x…”
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Conference Proceeding -
17
Strain-induced self-rolled-up semiconductor micro/nanotubes: Fabrication and characterization
“…Strain-induced self-rolled-up semiconductor nanotubes are a new type of building block for three-dimensional architectures. Semiconductor nanotubes (SNTs) take…”
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Dissertation