Search Results - "Chshiev, M."

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  1. 1

    Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications by Dieny, B., Chshiev, M.

    Published in Reviews of modern physics (28-06-2017)
    “…Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the…”
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  2. 2

    Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys by Niimi, Y, Kawanishi, Y, Wei, D H, Deranlot, C, Yang, H X, Chshiev, M, Valet, T, Fert, A, Otani, Y

    Published in Physical review letters (09-10-2012)
    “…We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis, based on a new…”
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  3. 3

    Anatomy of perpendicular magnetic anisotropy in Fe/MgO magnetic tunnel junctions: First-principles insight by Hallal, A., Yang, H. X., Dieny, B., Chshiev, M.

    “…Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA) in Fe/MgO magnetic tunnel junctions through…”
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  4. 4

    Proximity effects induced in graphene by magnetic insulators: first-principles calculations on spin filtering and exchange-splitting gaps by Yang, H X, Hallal, A, Terrade, D, Waintal, X, Roche, S, Chshiev, M

    Published in Physical review letters (25-01-2013)
    “…We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (europium…”
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  5. 5

    Anatomy of electric field control of perpendicular magnetic anisotropy at Fe/MgO interfaces by Ibrahim, F., Yang, H. X., Hallal, A., Dieny, B., Chshiev, M.

    “…The charge-mediated effect of electric field on the perpendicular magnetic anisotropy (PMA) of Fe/MgO interfaces is investigated using first-principles…”
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  6. 6

    Second order anisotropy contribution in perpendicular magnetic tunnel junctions by Timopheev, A. A., Sousa, R., Chshiev, M., Nguyen, H. T., Dieny, B.

    Published in Scientific reports (01-06-2016)
    “…Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops…”
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  7. 7

    Establishing characteristic behavior of voltage control of magnetic anisotropy by ionic migration by Ibrahim, F., Hallal, A., Dieny, B., Chshiev, M.

    “…A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing…”
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    Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions by Timopheev, A. A., Sousa, R., Chshiev, M., Buda-Prejbeanu, L. D., Dieny, B.

    “…The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer torques (STT) in the magnetization switching of out-of-plane…”
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  11. 11

    Penetration depth and absorption mechanisms of spin currents in Ir20Mn80 and Fe50Mn50 polycrystalline films by ferromagnetic resonance and spin pumping by Merodio, P, Ghosh, A, Lemonias, C, Gautier, E, Ebels, U, Chshiev, M, Béa, H, Baltz, V, Bailey, W E

    Published in Applied physics letters (20-01-2014)
    “…Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties…”
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  12. 12

    Spin-dependent transport in antiferromagnetic tunnel junctions by Merodio, P., Kalitsov, A., Béa, H., Baltz, V., Chshiev, M.

    Published in Applied physics letters (22-09-2014)
    “…We investigate the behaviour of spin transfer torque (STT) and tunnelling magnetoresistance (TMR) in epitaxial antiferromagnetic-based tunnel junctions using…”
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  13. 13

    Analytical description of ballistic spin currents and torques in magnetic tunnel junctions by Chshiev, M., Manchon, A., Kalitsov, A., Ryzhanova, N., Vedyayev, A., Strelkov, N., Butler, W. H., Dieny, B.

    “…In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with…”
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  14. 14

    Stability phase diagram of a perpendicular magnetic tunnel junction in noncollinear geometry by Strelkov, N., Timopheev, A., Sousa, R. C., Chshiev, M., Buda-Prejbeanu, L. D., Dieny, B.

    “…Experimental measurements performed on MgO-based perpendicular magnetic tunnel junctions show a strong dependence of the stability voltage-field diagrams as a…”
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  15. 15

    Controlling the spin-torque efficiency with ferroelectric barriers by Useinov, A., Chshiev, M., Manchon, A.

    “…Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of…”
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  16. 16

    Ferromagnetism in hydrogenated graphene nanopore arrays by Tada, K, Haruyama, J, Yang, H X, Chshiev, M, Matsui, T, Fukuyama, H

    Published in Physical review letters (18-11-2011)
    “…Theoretically, the so-called zigzag edge of graphenes provides localized electrons due to the presence of flat energy bands near the Fermi level. Spin…”
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  17. 17

    Long-Range Phase Coherence in Double-Barrier Magnetic Tunnel Junctions with a Large Thick Metallic Quantum Well by Tao, B S, Yang, H X, Zuo, Y L, Devaux, X, Lengaigne, G, Hehn, M, Lacour, D, Andrieu, S, Chshiev, M, Hauet, T, Montaigne, F, Mangin, S, Han, X F, Lu, Y

    Published in Physical review letters (09-10-2015)
    “…Double-barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant…”
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    Graphene magnet realized by hydrogenated graphene nanopore arrays by Tada, K., Haruyama, J., Yang, H. X., Chshiev, M., Matsui, T., Fukuyama, H.

    Published in Applied physics letters (31-10-2011)
    “…The so-called zigzag edge of graphenes theoretically has localized electrons due to the presence of flat energy bands near the Fermi level. The localized…”
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  20. 20

    Effect of structural relaxation and oxidation conditions on interlayer exchange coupling in Fe | MgO | Fe tunnel junctions by Yang, H. X., Chshiev, M., Kalitsov, A., Schuhl, A., Butler, W. H.

    Published in Applied physics letters (28-06-2010)
    “…The effect of structural relaxation and interfacial oxidation is demonstrated from first principles to have a crucial impact on interlayer exchange coupling…”
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