Design of a low noise TIA between 4.4 and 5 GHz for RoF applications on a GaAs pHEMT technology

Design of a low noise TIA between 4.4 and 5 GHz for RoF applications on a GaAs pHEMT technology

In this paper a low noise trans-impedance amplifier (TIA) is presented between 4.4 GHz and 5 GHz in a GaAs pHEMT technology using a commercial photodiode. Using a narrow-band design's technique of photo-receiver basis on microwave approaches to design a low noise amplifier, we increase the band...

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Bibliographic Details
Published in:2013 13th Mediterranean Microwave Symposium (MMS) pp. 1 - 4
Main Authors: Kacou, Charles Edoua, Polleux, Jean Luc, Villegas, Martine, Chretien, Gerald, LeBorgne, Alain
Format: Conference Proceeding
Language:English
Published: IEEE 01-09-2013
Subjects:
Bandwidth
Current density
equivalent input current noise density
Noise
Noise measurement
PHEMTs
photo-receiver
Photodiodes
TIA
Topology
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Summary:In this paper a low noise trans-impedance amplifier (TIA) is presented between 4.4 GHz and 5 GHz in a GaAs pHEMT technology using a commercial photodiode. Using a narrow-band design's technique of photo-receiver basis on microwave approaches to design a low noise amplifier, we increase the bandwidth. The photo-receiver provides an equivalent input noise current density of 5.5 pA/VHz at 4.6 GHz.
ISSN:2157-9822
2157-9830
DOI:10.1109/MMS.2013.6663081