Search Results - "Chouaib, Houssam"

Modeling the time-dependence of the photoreflectance spectroscopy on ultra-shallow As+ ion implanted silicon by Chouaib, Houssam

“…•The rapid photoreflectance spectroscopy acquired from semiconductors reveals its time-dependence.•The slow variation of the built-in electric field is…”
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Nanoscale optical critical dimension measurement of a contact hole using deep ultraviolet spectroscopic ellipsometry by Chouaib, Houssam, Zhao, Qiang

“…Highly sensitive optical metrology techniques based on spectroscopic ellipsometry (SE) arerequired for three dimensional monitoring of line-profiles and…”
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Scatterometry Critical Dimension Solution for Gate All Around Sheet-Specific Metrology: Topic/category: Advanced Metrology by Chouaib, Houssam, Chou, Anderson, Dimastrodonato, Valeria, Chang, HaoMiao, Tan, Zhengquan, Shaughnessy, Derrick

“…The complex vertically stacked gate-all-around (GAA) manufacturing process drives the demand for more challenging inline metrology requirements. GAA technology…”
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Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration by Chouaib, Houssam, Bru-Chevallier, Catherine

“…The authors present a microphotoreflectance (micro-PR) spectroscopic study of a biased In Ga Al As ∕ Ga As Sb ∕ In P heterojunction bipolar transistor. Franz…”
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Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates by Chouaib, Houssam, Bru-Chevallier, Catherine, Apostoluk, Aleksandra, Rudno-Rudzinski, Wojciech, Lijadi, Melania, Bove, Philippe

“…Photoreflectance (PR) spectroscopy is performed to investigate the Fermi level pinning at the surface of GaAsSb, in a series of epitaxial structures with…”
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UV photoreflectance spectroscopy in strained silicon on insulator structures by Munguía, Jacobo, Bluet, Jean-Marie, Chouaib, Houssam, Bremond, Georges, Bru-Chevallier, Catherine

“…The optical modulation technique of photoreflectance (PR) is applied on tensely‐strained silicon on insulator (sSOI) substrates in order to determine the…”
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Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors by Bru-Chevallier, C., Chouaib, H., Arcamone, J., Benyattou, T., Lahreche, H., Bove, P.

“…This work is devoted to a photoreflectance (PR) study of single GaAsSb layers grown pseudomorphically on InP. Such antimonide alloys included in the base of…”
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Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP by Chouaib, Houssam, Bru-Chevallier, Catherine, Apostoluk, Aleksandra, Rudno-Rudzinski, Wojciech, Pelouard, Jean-Luc, Lijadi, Melania, Bove, Philippe

“…GaAsSb is an important III–V semiconductor ternary alloy which is currently used as the thin base layer in high speed InP Heterojunction Bipolar Transistors…”
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Surface Fermi level in GaAsSb alloys grown by MBE on Inp substrates by Chouaib, H., Rudno-Rudzinski, W., Apostoluk, A., Bru-Chevallier, C., Lijadi, M., Bove, P.

“…We use photoreflectance spectroscopy to investigate the Fermi level pinning at the surface of GaAsSb. The measurements have been performed on five GaAsSb/Inp…”
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