Search Results - "Chor, E F"

Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxide by Hu, Guangxia, Kumar, Bhupendra, Gong, Hao, Chor, E. F., Wu, Ping

“…Transparent indium zinc oxide (IZO) ohmic contacts to phosphor-doped n -type ZnO have been formed. The resistance, transmittance, and phase reliability of the…”
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AlGaN/GaN high electron mobility transistors with implanted ohmic contacts by Wang, H.T., Tan, L.S., Chor, E.F.

“…Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant…”
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Effects of surface plasma treatment on n-GaN ohmic contact formation by Li, L.K, Tan, L.S, Chor, E.F

“…Elemental compositions of GaN surfaces treated by N 2 and BCl 3/Cl 2 plasmas have been investigated via AES and XPS analyses. The AES results indicate a low…”
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Study of activation of beryllium implantation in gallium nitride by Wang, H.T, Tan, L.S, Chor, E.F

“…In this paper, post-implantation thermal activation of beryllium in GaN by rapid thermal annealing (RTA) or pulsed laser annealing (PLA) has been investigated…”
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Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition by Tian, F., Chor, E.F.

“…Physical and electrical characteristics of hafnium oxide (HfO 2) films grown by pulsed laser deposition (PLD) technique and their application in AlGaN/GaN…”
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Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies by Chor, E.F., Lerdworatawee, J.

“…An analytical quasi-two-dimensional transmission tine model (QTD-TLM) has been formulated to more accurately extract the specific contact resistance (/spl…”
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Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy by Bera, L K, Liu, Y, Bera, M K, Singh, S P, Dolmanan, S B, Tan, H R, Bhat, T N, Chor, E F, Tripathy, S

“…Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in AlxGa1-xN/GaN high electron mobility transistors (HEMTs)…”
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Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's by Chor, E.F., Malik, R.J., Hamm, R.A., Ryan, R.

“…The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 /spl Aring/ thick p/sup +/-InGaAs base of InP/InGaAs/InP…”
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Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown by CHA, C. L, CHOR, E. F, GONG, H, CHAN, L

“…The operational reliability of flash memory devices critically depends on the condition of the interface between the floating gate (polysilicon) and the…”
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Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique by Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J.

“…The dielectric breakdown time of reoxidized nitrided oxide (ONO) in flash memory devices has been evaluated using the constant current-stressing technique. The…”
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Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors by CHA, C. L, CHOR, E. F, JIA, Y. M, BOURDILLON, A. J, GONG, H, PAN, J. S, ZHANG, A. Q, TANG, S. K, BOOTHROYD, C. B

“…A technique to improve the smoothness of the floating polysilicon layer of non-volatile memory devices is proposed. Via low-energy N2+ and Ar+ ion implantation…”
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Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors by Chor, E.F., Ashburn, P., Brunnschweiler, A.

“…Measurements of emitter resistance have been made on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors, fabricated with or without an…”
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A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes by Chor, E.-F., Brunnschweiler, A., Ashburn, P.

“…A sensitivity analysis is used to compute an analytical expression for the propagation delay of an emitter-coupled logic (ECL) gate in terms of the electrical…”
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Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon by CHUNG FOONG TAN, ENG FONG CHOR, LEE, Hyeokjae, JINPING LIU, QUEK, Elgin, CHAI, Lap

“…We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing…”
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Properties of p -type and n -type ZnO influenced by P concentration by Hu, Guangxia, Gong, Hao, Chor, E. F., Wu, Ping

“…The electrical conductivity of P-doped ZnO can be controlled by changing the P-doping concentration. With increasing P concentration, ZnO can be changed from n…”
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Investigation of active Si pitting and its impact on 0.15 and 0.30 μ m n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors by Chua, C. S., Chor, E. F., Goh, F., See, A., Chan, L.

“…The causes of pitting on an active silicon surface and its impact on 0.15 and 0.30 μ m n-type metal–oxide semiconductor (NMOS) and p-type…”
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Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication by Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, James, Li, W.S., See, Alex, Chan, Lap

“…Integration issues involved in incorporating indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This…”
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Probing channel temperature profiles in Al x Ga 1−x N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy by Kyaw, L. M., Bera, L. K., Liu, Y., Bera, M. K., Singh, S. P., Dolmanan, S. B., Tan, H. R., Bhat, T. N., Chor, E. F., Tripathy, S.

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Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy by Kyaw, L. M., Institute of Materials Research and Engineering, ASTAR, Bera, L. K., Dolmanan, S. B., Tan, H. R., Bhat, T. N., Tripathy, S., Liu, Y., Bera, M. K., Singh, S. P., Chor, E. F.

“…Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility…”
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Schottky Barrier Height Modulation of NickelaDysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs by Sinha, M, Lee, RTP, Chor, E F, Yeo, Yee-Chia

“…This letter reports on the fabrication and hole Schottky barrier (Phi sub(B) super(P)) modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide…”
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