Search Results - "Chong, Haining"
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Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy
Published in RSC advances (01-01-2018)“…In this work, phase change chalcogenide Ge 2 Sb 2 Te 5 (GST) thin films were fabricated by magnetron sputtering. The optical properties, especially the optical…”
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2
ITO–TiN–ITO Sandwiches for Near-Infrared Plasmonic Materials
Published in ACS applied materials & interfaces (02-05-2018)“…Indium tin oxide (ITO)-based sandwich structures with the insertion of ultrathin (<10 nm) titanium nitride (TiN) are investigated as near-infrared (NIR)…”
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3
Actively Tunable Fano Resonance in H-Like Metal-Graphene Hybrid Nanostructures
Published in Plasmonics (Norwell, Mass.) (01-04-2022)“…Actively tunable Fano resonance has obvious advantages in applications such as chemical or biological sensors, switches, modulators, and optical filters. In…”
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4
CMOS-Compatible Antimony-Doped Germanium Epilayers for Mid-Infrared Low-Loss High-Plasma-Frequency Plasmonics
Published in ACS applied materials & interfaces (29-05-2019)“…Antimony (Sb) heavily-doped germanium (Ge)-on-silicon (Si) epitaxial films are investigated as mid-infrared (MIR) plasmonic materials. Structural, electrical,…”
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5
Transparent Conductive Oxides and Their Applications in Near Infrared Plasmonics
Published in Physica status solidi. A, Applications and materials science (06-03-2019)“…Transparent conductive oxides (TCOs) have been widely used as an important component of optoelectronic devices. They are required to exhibit high performance…”
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6
Exploring the resonance absorption of subwavelength-patterned epitaxial-grown group-IV semiconductor composite structures
Published in Optics express (08-05-2023)“…We experimentally and theoretically demonstrate a mid-infrared perfect absorber with all group-IV epitaxial layered composite structures. The multispectral…”
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7
Tailored absorption/emission and ultrastrong coupling from heavily doped germanium plasmonic antennas
Published in Optics and laser technology (01-08-2024)“…•Strong field confinement with preferred interlayer material with high refractive index.•The spectral profile of the resonances being controlled by the lateral…”
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8
Study on epsilon crossover wavelength tuning of heavily doped germanium-on-silicon in mid-infrared range
Published in Optics express (11-11-2019)“…In this paper, we demonstrate that n-type heavily doped germanium (Ge) can serve as a sort of CMOS-compatible, permittivity crossover wavelength (at which the…”
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9
High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires
Published in Nano research (01-09-2015)“…High-performance solar-blind UV (ultraviolet) photodetectors (PDs) based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle…”
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10
Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers
Published in Journal of crystal growth (15-04-2018)“…•TDD reduction can be obtained by lowering the heating rate.•High rate deposition maintains smooth surface morphology in Ge epilayer.•A thermodynamic model is…”
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11
Optical constants acquisition and phase change properties of Ge 2 Sb 2 Te 5 thin films based on spectroscopy
Published in RSC advances (05-06-2018)“…In this work, phase change chalcogenide Ge Sb Te (GST) thin films were fabricated by magnetron sputtering. The optical properties, especially the optical…”
Get full text
Journal Article -
12
High-performance solar-blind ultraviolet photodetector based on electrospun TiO sub(2)-ZnTiO sub(3) heterojunction nanowires
Published in Nano research (01-09-2015)“…High-performance solar-blind UV (ultraviolet) photodetectors (PDs) based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle…”
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Journal Article -
13
High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nano- wires
Published in 纳米研究:英文版 (2015)“…High-performance solar-blind UV (ultraviolet) photodetectors (PDs) based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle…”
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