A 205/275GHz fT/fmax Airgap Isolated 0.13 m BiCMOS Technology featuring on-chip High Quality Passives

A QSA airgap isolated HBT module, embedded in a 0.13mum BiCMOS technology, reaches f T /f max values of 205/275GHz and a 3.5ps CML gate-delay. A 17GHz LNA using high quality passives sustains above 8kV HBM ESD stress

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Bibliographic Details
Published in:	2006 Bipolar/BiCMOS Circuits and Technology Meeting pp. 1 - 4
Main Authors:	Van Huylenbroeck, S., Kunnen, E., Leray, P., Devriendt, K., Shi, X.P., Loo, R., Hijzen, E., Decoutere, S., Choi, X.P., Sibaja-Hernandez, A., Piontek, A., Linten, D., Dehan, M., Dupuis, O., Carchon, G., Vleugels, F.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-10-2006
Subjects:	BiCMOS integrated circuits BiCMOS process technology CMOS technology Current mode logic Diffusion tensor imaging Heterojunction bipolar transistors Integrated circuit technology Isolation technology Parasitic capacitance Radio frequency Silicon Germanium Surfaces Thermal resistance
Online Access:	Get full text
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Description
Summary:	A QSA airgap isolated HBT module, embedded in a 0.13mum BiCMOS technology, reaches f T /f max values of 205/275GHz and a 3.5ps CML gate-delay. A 17GHz LNA using high quality passives sustains above 8kV HBM ESD stress
ISBN:	9781424404582 1424404584
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BIPOL.2006.311158