Search Results - "Choi, Sungju"

ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors by Lee, Lynn, Hwang, Jeongwoon, Jung, Jin Won, Kim, Jongchan, Lee, Ho-In, Heo, Sunwoo, Yoon, Minho, Choi, Sungju, Van Long, Nguyen, Park, Jinseon, Jeong, Jae Won, Kim, Jiyoung, Kim, Kyung Rok, Kim, Dae Hwan, Im, Seongil, Lee, Byoung Hun, Cho, Kyeongjae, Sung, Myung Mo

“…A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied…”
Get full text

Lifetime estimation of thin-film transistors in organic emitting diode display panels with compensation by Park, Jingyu, Choi, Sungju, Kim, Changwook, Shin, Hong Jae, Jeong, Yun Sik, Bae, Jong Uk, Oh, Saeroonter, Kim, Dae Hwan

“…Oxide semiconductor thin-film transistors (TFTs) are used in the pixel array and gate driver circuits of organic light emitting diode (OLED) display panels…”
Get full text

Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors by Choi, Sungju, Kim, Jae-Young, Kang, Hara, Ko, Daehyun, Rhee, Jihyun, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan

“…The effect of oxygen content on current-stress-induced instability was investigated in bottom-gate amorphous InGaZnO (a-IGZO) thin-film transistors. The…”
Get full text

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors by Sungju Choi, Juntae Jang, Hara Kang, Ju Heyuck Baeck, Jong Uk Bae, Kwon-Shik Park, Soo Young Yoon, In Byeong Kang, Dong Myong Kim, Sung-Jin Choi, Yong-Sung Kim, Oh, Saeroonter, Dae Hwan Kim

“…We propose an experimental method to decompose the positive gate-bias stress (PBS)induced threshold voltage shift (AVth) of amorphous InGaZnO (a-IGZO)…”
Get full text

Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors by Uhm, Mihee, Lee, Jin-Moo, Lee, Jieun, Lee, Jung Han, Choi, Sungju, Park, Byung-Gook, Kim, Dong Myong, Choi, Sung-Jin, Mo, Hyun-Sun, Jeong, Yong-Joo, Kim, Dae Hwan

“…Rather than the internal genome nucleic acids, the biomolecules on the surface of the influenza virus itself should be detected for a more exact and rapid…”
Get full text

Unscrambling for Subgap Density-of-States in Multilayered MoS2 Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy by Yang, Ga Won, Seo, Seung Gi, Choi, Sungju, Kim, Dae Hwan, Jin, Sung Hun

“…Herein, we quantitatively analyze the evolution of the subgap density of states (DOSs) for multilayered molybdenum disulfide (m-MoS 2 ) field effect…”
Get full text

Experimental extraction of stern-layer capacitance in biosensor detection using silicon nanowire field-effect transistors by Choi, Sungju, Mo, Hyun-Sun, Kim, Jungmok, Kim, Seohyeon, Lee, Seung Min, Choi, Sung-Jin, Kim, Dong Myong, Park, Dong-Wook, Kim, Dae Hwan

“…Accurate diagnose of a disease in the early stage is critical to treat the disease properly. To this end, a multitude of biosensors with advanced technologies…”
Get full text

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors by Seo, Youngjin, Jeong, Hwan-Seok, Jeong, Ha-Yun, Park, Shinyoung, Jang, Jun Tae, Choi, Sungju, Kim, Dong Myong, Choi, Sung-Jin, Jin, Xiaoshi, Kwon, Hyuck-In, Kim, Dae Hwan

“…We investigated the effect of simultaneous mechanical and electrical stress on the electrical characteristics of flexible indium-gallium-zinc oxide (IGZO)…”
Get full text

The Effect of Gate and Drain Fields on the Competition Between Donor-Like State Creation and Local Electron Trapping in In-Ga-Zn-O Thin Film Transistors Under Current Stress by Sungju Choi, Hyeongjung Kim, Chunhyung Jo, Hyun-Suk Kim, Sung-Jin Choi, Dong Myong Kim, Park, Jozeph, Dae Hwan Kim

“…Thin-film transistors using In-Ga-Zn-O (IGZO) semiconductors were evaluated under positive bias stress with different gate and drain voltages (V GS and V DS ,…”
Get full text

Modeling and Characterization of the Abnormal Hump in n-Channel Amorphous-InGaZnO Thin-Film Transistors After High Positive Bias Stress by Lee, Jungmin, Choi, Sungju, Kim, Seong Kwang, Choi, Sung-Jin, Kim, Dae Hwan, Park, Jisun, Kim, Dong Myong

“…Hump characteristics of n-channel amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) after positive gate and drain bias stress…”
Get full text

Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions by Park, Jingyu, Choi, Sungju, Kim, Changwook, Shin, Hong Jae, Jeong, Yun Sik, Bae, Jong Uk, Oh, Chang Ho, Oh, Saeroonter, Kim, Dae Hwan

“…Oxide semiconductor transistors control the brightness and color of organic light‐emitting diode (OLED) displays in large‐screen televisions to portable…”
Get full text

Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques by Lee, Heesung, Kim, Jaewon, Choi, Sungju, Kim, Seong Kwang, Kim, Junyeap, Park, Jaewon, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong

“…We report a model for the band-bending effect (BBE) for improved extraction of the subgap density-of-states (DOS) in amorphous semiconductor thin-film…”
Get full text

A Study on the Degradation of In-Ga-Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution by Sungju Choi, Hyeongjung Kim, Chunhyung Jo, Hyun-Suk Kim, Sung-Jin Choi, Dong Myong Kim, Park, Jozeph, Dae Hwan Kim

“…Thin-film transistors using In-Ga-Zn-O (IGZO) semiconductors were evaluated under current stress by applying positive voltages to the gate and drain…”
Get full text

Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions by Kim, Dae Hwan, Choi, Sungju, Jang, Juntae, Kang, Hara, Kim, Dong Myong, Choi, Sung‐Jin, Kim, Yong‐Sung, Oh, Saeroonter, Baeck, Ju Heyuck, Bae, Jong Uk, Park, Kwon‐Shik, Yoon, Soo Young, Kang, In Byeong

“…Decomposition of the positive gate‐bias temperature stress (PBTS)‐induced instability into contributions of distinct mechanisms is experimentally demonstrated…”
Get full text

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs by Yang, Ga Won, Park, Jingyu, Choi, Sungju, Kim, Changwook, Kim, Dong Myong, Choi, Sung-Jin, Bae, Jong-Ho, Cho, Il Hwan, Kim, Dae Hwan

“…In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress (NBIS) and positive bias stress (PBS) in amorphous…”
Get full text

Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization by Kim, Jongchan, Huong, Chu Thi Thu, Long, Nguyen Van, Yoon, Minho, Kim, Min Jae, Jeong, Jae Kyeong, Choi, Sungju, Kim, Dae Hwan, Lee, Chi Ho, Lee, Sang Uck, Sung, Myung Mo

“…An organic–inorganic hybrid superlattice with near perfect synergistic integration of organic and inorganic constituents was developed to produce properties…”
Get full text

Influence of the Gate/Drain Voltage Configuration on the Current Stress Instability in Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Self-Aligned Top-Gate Structure by Choi, Sungju, Park, Shinyoung, Kim, Jae-Young, Rhee, Jihyun, Kang, Hara, Kim, Dong Myong, Choi, Sung-Jin, Kim, Dae Hwan

“…The influence of <inline-formula> <tex-math notation="LaTeX">{V}_{\text {GS}}/{V}_{\text {DS}} </tex-math></inline-formula> condition on the current stress…”
Get full text

Structural and electronic properties with respect to Si doping in oxygen rich ZnSnO amorphous oxide semiconductor by Lee, Byeong Hyeon, Park, Jingyu, Kumar, Akash, Choi, Sungju, Kim, Dae Hwan, Lee, Sang Yeol

“…The effect of Si doping in the presence of excess oxygen on the zinc-tin-oxide (ZTO) thin-film transistor is investigated. The threshold voltage increases from…”
Get full text

Positive Bias Stress Instability of InGaZnO TFTs With Self-Aligned Top-Gate Structure in the Threshold-Voltage Compensated Pixel by Choi, Sungju, Choi, Sung-Jin, Kim, Dae Hwan, Park, Shinyoung, Kim, Jaeyoung, Seo, Youngjin, Shin, Hong Jae, Jeong, Yun Sik, Bae, Jong Uk, Oh, Chang Ho, Kim, Dong Myong

“…The instability induced under positive gatebias stress (PBS) in amorphous InGaZnO (a-IGZO) thinfilm transistors (TFTs) with self-aligned top-gate coplanar…”
Get full text

Spatial Degradation Profiling Technique in Self-Aligned Top-Gate a-InGaZnO TFTs Under Current-Flowing Stress by Park, Jingyu, Choi, Sungju, Myoung, Seung Joo, Kim, Jae-Young, Kim, Changwook, Choi, Sung-Jin, Kim, Dong Myong, Bae, Jong-Ho, Kim, Dae Hwan

“…An analysis technique of quantitatively extrac- ting the spatial profile of the channel characteristics is proposed and utilized to observe the local…”
Get full text