Search Results - "Choi, Pyungho"

Effects of polyimide curing on image sticking behaviors of flexible displays by Kim, Hyojung, Park, Jongwoo, Bak, Sora, Park, Jungmin, Byun, Changwoo, Oh, Changyong, Kim, Bo Sung, Han, Chanhee, Yoo, Jongmin, Kim, Dongbhin, Song, Jangkun, Choi, Pyungho, Choi, Byoungdeog

“…Flexible displays on a polyimide (PI) substrate are widely regarded as a promising next-generation display technology due to their versatility in various…”
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Evaluation of Minority Carrier Generation Lifetime for Oxide Semiconductors by Choi, Pyungho, Lee, Sangmin, Kim, Hyojung, Park, Jungmin, Choi, Byoungdeog

“…•A carrier generation lifetime technique for amorphous-oxide-semiconductors is proposed.•The off current of InGaZnO and InSnZnO is attributed to thermally…”
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Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor by Park, Jungmin, Kim, Hyojung, Choi, Pyungho, Jeon, Bohyeon, Lee, Jongyoon, Oh, Changyong, Kim, Bosung, Choi, Byoungdeog

“…This study investigated the electrical and stability characteristics of Al 2 O 3 as a gate insulator, which was deposited by various atomic layer deposition…”
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Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress by Kim, Hyojung, Kim, Soonkon, Yoo, Jongmin, Oh, Changyong, Kim, Bosung, Hwang, Hyuncheol, Park, Jungmin, Choi, Pyungho, Song, Jangkun, Im, Kiju, Choi, Byoungdeog

“…In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive…”
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Band alignment of atomic layer deposited (HfZrO4) 1−x (SiO2) x gate dielectrics on Si (100) by Heo, Sung, Tahir, Dahlang, Chung, Jae Gwan, Lee, Jae Cheol, Kim, KiHong, Lee, Junho, Lee, Hyung-Ik, Park, Gyeong Su, Oh, Suhk Kun, Kang, Hee Jae, Choi, Pyungho, Choi, Byoung-Deog

“…The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by…”
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Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy by Heo, Sung, Cho, Eunseog, Lee, Hyung-Ik, Park, Gyeong Su, Kang, Hee Jae, Nagatomi, T., Choi, Pyungho, Choi, Byoung-Deog

“…The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution…”
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Electrical evaluation of the crystallization characteristics of excimer laser annealed polycrystalline silicon active layer by Koo, Kwangjun, Kim, Sangsub, Choi, Pyungho, Kim, Jaejin, Jang, Keunho, Choi, Byoungdeog

“…We showed that the crystallinity of polycrystalline silicon (poly-Si) active layer of low temperature poly silicon (LTPS) devices can be comparatively analyzed…”
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Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Interface in Low-Temperature Polycrystalline Silicon TFTs by Park, Jungmin, Choi, Pyungho, Kim, Soonkon, Jeon, Bohyeon, Lee, Jongyoon, Choi, Byoungdeog

“…This study investigates the effect of the gate SiO 2 thickness (80, 100, and 130 nm) deposited by plasma enhanced chemical vapor deposition on the interface…”
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Determination of the Drain Saturation Voltage of a Metal--Oxide--Semiconductor Field-Effect Transistor by the Capacitance--Voltage Method by Kim, Kwangsoo, Choi, Pyungho, Kim, Hyungjoon, Park, Hyoungsun, Choi, Byoungdeog

“…In this paper, we present a simple technique to extract drain saturation voltage using the drain junction capacitance--voltage data of a…”
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Effect of Bias Temperature Stress on the Anti-Reflection HfO2 Layer in Complementary Metal Oxide Semiconductor Image Sensors by Kim, Hyung-Joon, Lee, Kyung-Su, Choi, Pyungho, Kim, Kwang-Soo, Baek, Dohyun, Choi, Byoungdeog

“…The effects of various electrical characteristics of HfO 2 in CMOS image sensors on bias-thermal stress instability were evaluated. In this work, the HfO 2…”
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Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature by Kim, Soonkon, Kim, Hyojung, Kim, Kihwan, Choi, Pyungho, Choi, Byoungdeog

“…In this paper, we identified the defect state of p-channel low temperature poly-Si thin film transistors (LTPS TFTs) fabricated on a polyimide (PI) substrate…”
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Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells by KO, Jisoo, GONG, Daeyeong, PILLAI, Krishnakumar, LEE, Kong-Soo, JU, Minkyu, CHOI, Pyungho, KIM, Kwang-Ryul, YI, Junsin, CHOI, Byoungdeog

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Improvement of negative bias temperature instability of LTPS TFTs by high pressure H2O annealing by Kim, Soonkon, Kim, Hyojung, Kim, Kihwan, Choi, Pyungho, Choi, Byoungdeog

“…In this study, high pressure H2O annealing (HPA) was performed to improve the reliability of low temperature poly-Si thin film transistors (LTPS TFTs)…”
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Gate leakage current reduction and improved reliability with an ultra-thin Ti layer for low-power applications by Park, Jungmin, Choi, Pyungho, Kim, Soonkon, Kang, Heesung, Ku, Jahum, Choi, Byoungdeog

“…•Physical vapor deposition method was used for metal gate deposition.•Physical and electrical properties of TiN were analyzed with various Ar/N2 ratios.•TiN…”
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Atomic layer-deposited (HfZrO4)1−x(SiO2)x thin films for gate stack applications by Choi, Pyungho, Baek, Dohyun, Heo, Sung, Choi, Byoungdeog

“…Hafnium‑zirconium silicate (HfZr-silicate, (HfZrO4)1−x(SiO2)x) thin films were developed for advanced gate stack applications by incorporating Si atoms into…”
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The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress by Kim, Hyojung, Im, Kiju, Park, Jongwoo, Khim, Taeyoung, Hwang, Hyuncheol, Kim, Soonkon, Lee, Sangmin, Song, Minjun, Choi, Pyungho, Song, Jangkun, Choi, Byoungdeog

“…In this paper, we propose a novel mechanism for the Vth shift of amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors under negative bias…”
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Implementation of a Novel Audio Network Protocol by Lee, Jaeho, Jeon, Hyoungjoon, Choi, Pyungho, Kwon, Soonchul, Lee, Seunghyun

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Band alignment of atomic layer deposited (HfZrO{sub 4}){sub 1−x}(SiO{sub 2}){sub x} gate dielectrics on Si (100) by Heo, Sung, College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 16419, Tahir, Dahlang, Chung, Jae Gwan, Lee, Jae Cheol, Kim, KiHong, Lee, Junho, Lee, Hyung-Ik, Park, Gyeong Su, Oh, Suhk Kun, Kang, Hee Jae, Choi, Pyungho, Choi, Byoung-Deog

“…The band alignment of atomic layer deposited (HfZrO{sub 4}){sub 1−x}(SiO{sub 2}){sub x} (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si…”
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Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells by Ko, Jisoo, Gong, Daeyeong, Pillai, Krishnakumar, Lee, Kong-Soo, Ju, Minkyu, Choi, Pyungho, Kim, Kwang-Ryul, Yi, Junsin, Choi, Byoungdeog

“…In this report, we present a cost effective simple innovative approach to fabricate double layer anti-reflection (DLAR) coatings using a single material which…”
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Defect states in amorphous SiNx:H compounds using thermally stimulated exo-electron emission by Heo, Sung, Park, Hyoungsun, chung, JaeGwan, Lee, Hyung Ik, Park, Jucheol, Kyoung, Yong Koo, Kim, Yong Su, Kim, KiHong, Byun, SunJung, Jeon, Woo Sung, Park, Gyeong Su, Choi, Pyungho, Choi, Byoung-Deog, Lee, Dongwha, Cho, Hoon Young, Kang, Hee Jae

“…Defect states of hydrogenated amorphous silicon nitride (a-SiNx:H) thin films were measured using the thermally stimulated exoelectron emission spectroscopic…”
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