Search Results - "Choi, L.j."

On the Use of a SiGe Spike in the Emitter to Improve the fTxBV Product of High-Speed SiGe HBTs by Choi, L.J, Van Huylenbroeck, S, Piontek, A, Sibaja-Hernandez, A, Kunnen, E, Meunier-Beillard, P, van Noort, W.D, Hijzen, E, Decoutere, S

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Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT by Piontek, A., Choi, L.J., Van Huylenbroeck, S., Vanhoucke, T., Hijzen, E., Decoutere, S.

“…As device scaling for high-performance bipolar transistors continues, not only the vertical scaling but also the lateral scaling with reduction of the…”
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Speed - accuracy trade-off for measurement and characterization of the matching performance of SiGe:C HBTs, applied to a 200 GHz technology by Choi, L.J., Venegas, R., Decoutere, S.

“…In this paper, the trade-off between time and accuracy for measurement of the matching performance of bipolar transistors has been investigated. After…”
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High-frequency measurements of the mismatch on the Y-parameters of high-speed SiGe:C HBTs by Choi, L.J., Venegas, R., Decoutere, S.

“…The performance of analog circuits operating at high frequencies is limited by device mismatch at these frequencies. In this paper, high-frequency measurements…”
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On the Use of a SiGe Spike in the Emitter to Improve the f\hbox Product of High-Speed SiGe HBTs by Choi, L.J., Van Huylenbroeck, S., Piontek, A., Sibaja-Hernandez, A., Kunnen, E., Meunier-Beillard, P., van Noort, W.D., Hijzen, E., Decoutere, S.

“…Aggressive vertical scaling of SiGe HBTs has yielded impressive values for the cut-off frequencies (f T ), but these HBTs often suffer from too high current…”
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A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process by Donkers, J.J.T.M., Vanhoucke, T., Vleugels, F., Winderickx, G., Kunnen, E., Peeters, S., Baute, D., De Vos, B., Vandeweyer, T., Loo, R., Venegas, R., Kramer, M.C.J.C.M., Pijper, R., Voogt, F.C., Decoutere, S., Hijzen, E.A., Van Huylenbroeck, S., Choi, L.J., Meunier-Beillard, P., Sibaja-Hernandez, A., Boccardi, G., van Noort, W., Hurkx, G.A.M.

“…In this paper we describe a novel fully self-aligned HBT architecture, which enables a maximum reduction of device parasitics. TCAD simulations show that this…”
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A Novel Deep Trench Isolation Featuring Airgaps for a High-Speed 0.13μm SiGe:C BiCMOS Technology by Choi, L.j., Shi, X.p., Loo, R., Vanhaelemeersch, S., Decoutere, S., Kunnen, E., Van Huylenbroeck, S., Piontek, A., Sibaja-Hemandez, A., Vleugels, F., Dupont, T., Leray, P., Devriendt, K.

“…A novel scheme for deep trench isolation is presented, which uses an airgap as insulator. When incorporated in our 0.13mum SiGe:C BiCMOS technology, the…”
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Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs by Piontek, A., Vanhoucke, T., Van Huylenbroeck, S., Choi, L.J., Hurkx, G.A.M., Hijzen, E., Decoutere, S.

“…In this paper, we presented a comparative study of the HBT reliability of scaled 200GHz SiGe:C quasi self-aligned HBTs integrated in a 0.13mum BiCMOS process…”
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A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology by Choi, L.J., Van Huylenbroeck, S., Donkers, J., van Noort, W.D., Piontek, A., Sibaja-Hernandez, A., Meunier-Beillard, P., Neuilly, F., Kunnen, E., Leray, P., Vleugels, F., Venegas, R., Hijzen, E., Decoutere, S.

“…A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions…”
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Lateral and vertical scaling of a QSA HBT for a 0.13/spl mu/m 200GHz SiGe:C BiCMOS technology by Van Huylenbroeck, S., Sibaja-Hernandez, A., Piontek, A., Choi, L.J., Xu, M.W., Ouassif, N., Vleugels, F., Van Wichelen, K., Witters, L., Kunnen, E., Leray, P., Devriendt, K., Shi, X., Loo, R., Decoutere, S.

“…A 200 GHz F/sub t/ SiGe:C HBT has been integrated into a 0.13 /spl mu/m BiCMOS technology. A previous generation low complexity quasi self-aligned architecture…”
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