Search Results - "Choi, Jung Hae"

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film by Cheng, Yan, Gao, Zhaomeng, Ye, Kun Hee, Park, Hyeon Woo, Zheng, Yonghui, Zheng, Yunzhe, Gao, Jianfeng, Park, Min Hyuk, Choi, Jung-Hae, Xue, Kan-Hao, Hwang, Cheol Seong, Lyu, Hangbing

“…Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local shifting of two oxygen positions (O I and O II ) within the unit cells…”
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Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory by Yoo, Chanyoung, Jeon, Jeong Woo, Yoon, Seungjae, Cheng, Yan, Han, Gyuseung, Choi, Wonho, Park, Byongwoo, Jeon, Gwangsik, Jeon, Sangmin, Kim, Woohyun, Zheng, Yonghui, Lee, Jongho, Ahn, Junku, Cho, Sunglae, Clendenning, Scott B., Karpov, Ilya V., Lee, Yoon Kyung, Choi, Jung‐Hae, Hwang, Cheol Seong

“…Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is…”
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Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics by Park, Jaehong, Yeu, In Won, Han, Gyuseung, Hwang, Cheol Seong, Choi, Jung-Hae

“…We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS 2 using first principles and lattice dynamics…”
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AMMCR: Ab initio model for mobility and conductivity calculation by using Rode Algorithm by Mandia, Anup Kumar, Muralidharan, Bhaskaran, Choi, Jung-Hae, Lee, Seung-Cheol, Bhattacharjee, Satadeep

“…We present a module to calculate the mobility and conductivity of semiconducting materials using Rode’s algorithm. This module uses a variety of electronic…”
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Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics by Yeu, In Won, Han, Gyuseung, Park, Jaehong, Hwang, Cheol Seong, Choi, Jung-Hae

“…This work reports on the theoretical equilibrium crystal shapes of GaAs and InAs as a function of temperature and pressure, taking into account the…”
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Role of the Short‐Range Order in Amorphous Oxide on MoS2/a‐SiO2 and MoS2/a‐HfO2 Interfaces by Park, Jaehong, Yeu, In Won, Han, Gyuseung, Hwang, Cheol Seong, Choi, Jung‐Hae

“…The interface structures between MoS2 and amorphous oxides of SiO2 and HfO2 (MoS2/a‐SiO2 and MoS2/a‐HfO2) are investigated through ab‐initio molecular dynamics…”
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Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO2/Si structures by Ko, Eunjung, Choi, Jung-Hae

“…Recently, to improve the performance of an integrated metal-oxide-semiconductor (MOS) device, an attempt has been made in the industry to replace the amorphous…”
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Free-electron creation at the 60° twin boundary in Bi2Te3 by Kim, Kwang-Chon, Lee, Joohwi, Kim, Byung Kyu, Choi, Won Young, Chang, Hye Jung, Won, Sung Ok, Kwon, Beomjin, Kim, Seong Keun, Hyun, Dow-Bin, Kim, Hyun Jae, Koo, Hyun Cheol, Choi, Jung-Hae, Kim, Dong-Ik, Kim, Jin-Sang, Baek, Seung-Hyub

“…Interfaces, such as grain boundaries in a solid material, are excellent regions to explore novel properties that emerge as the result of local…”
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Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics by Yeu, In Won, Park, Jaehong, Han, Gyuseung, Hwang, Cheol Seong, Choi, Jung-Hae

“…A detailed understanding of the atomic configuration of the compound semiconductor surface, especially after reconstruction, is very important for the device…”
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Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110) by Kim, Hansung, Yeu, In Won, Han, Gyuseung, Ju, Gunwu, Lee, Yun Joong, Shin, Young-hun, Choi, Jung-Hae, Koo, Hyun Cheol, Kim, Hyung-jun

“…The evolution of the surface morphology and underlying pyramidal defects in homoepitaxial GaAs (110) layers was investigated with respect to the layer…”
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Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al2O3 Interfacial Layer by Jang, Younjin, Yeu, In Won, Kim, Jun Shik, Han, Jeong Hwan, Choi, Jung‐Hae, Hwang, Cheol Seong

“…The origin of hysteresis in the drain–source current (IDS)–gate‐source voltage (VGS) characteristics of atomic‐layer‐deposited (ALD) p‐type SnO thin‐film…”
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Atomic and electronic structures of a-ZnSnO3/a-SiO2 interface by ab initio molecular dynamics simulations by Park, Jaehong, Lee, Joohwi, Hwang, Cheol Seong, Choi, Jung-Hae

“…The interface between amorphous ZnSnO3 and amorphous SiO2 was investigated by ab initio molecular dynamic simulations. The radial distribution function at the…”
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Ordered Electronic Reconstruction of the (112¯0$11\bar{2}0$) ZnO Single Crystal by Parmar, Narendra S., Yim, Haena, Boatner, Lynn A., Sriboriboon, Panithan, Kim, Yunseok, Song, Kyung, Choi, Jung‐Hae, Yeu, In Won, Choi, Ji‐Won

“…Three‐dimensional (3D) charge‐written periodic peak and valley nanoarray surfaces are fabricated on a (112¯0$11\bar{2}0$) ZnO single crystal grown via chemical…”
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The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors by Seo, Haengha, Yeu, In Won, Kwon, Dae Seon, Kim, Dong Gun, Lim, Junil, Kim, Tae Kyun, Paik, Heewon, Choi, Jung‐Hae, Hwang, Cheol Seong

“…This study examines the influences of the Al2O3 and Y2O3 insertion layers (ILs) on the structural and electrical features of ZrO2 thin films for their…”
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A First-Principles Study on the Oxygen Adsorption and Interface Characteristics with a-GeO2 of Ge[001] Nanowire by Liu, Kai, Hwang, Cheol Seong, Choi, Jung-Hae

“…Astract First-principles calculations were performed to study the atomic and the electronic structures of the oxygen adsorption on the sidewalls of Ge[001]…”
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Scalable excitatory synaptic circuit design using floating gate based leaky integrators by Kornijcuk, Vladimir, Lim, Hyungkwang, Kim, Inho, Park, Jong-Keuk, Lee, Wook-Seong, Choi, Jung-Hae, Choi, Byung Joon, Jeong, Doo Seok

“…We propose a scalable synaptic circuit realizing spike timing dependent plasticity (STDP)—compatible with randomly spiking neurons. The feasible working of the…”
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Structure and mechanical properties of Ag-incorporated DLC films prepared by a hybrid ion beam deposition system by Choi, Heon Woong, Choi, Jung-Hae, Lee, Kwang-Ryeol, Ahn, Jae-Pyoung, Oh, Kyu Hwan

“…Ag-incorporated diamond-like carbon films were prepared on Si(100) wafers using a hybrid deposition system composed of an end-Hall-type hydrocarbon ion gun and…”
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A novel class of oxynitrides stabilized by nitrogen dimer formation by Kim, Sangtae, Gwon, Hyo Jin, Paek, Sung Wook, Kim, Seong Keun, Choi, Ji-Won, Kim, Jin-Sang, Choi, Jung-Hae, Kang, Chong-Yun, Baek, Seung-Hyub

“…Despite the wide applicability of oxynitrides from photocatalysis to refractory coatings, our understanding of the materials has been limited in terms of their…”
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Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases by Lee, Woongkyu, Yoo, Sijung, Yoon, Kyung Jean, Yeu, In Won, Chang, Hye Jung, Choi, Jung-Hae, Hoffmann-Eifert, Susanne, Waser, Rainer, Hwang, Cheol Seong

“…Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a…”
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Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs by Rha, Sang Ho, Jung, Jisim, Jung, Yoonsoo, Chung, Yoon Jang, Kim, Un Ki, Hwang, Eun Suk, Park, Byoung Keon, Park, Tae Joo, Choi, Jung-Hae, Hwang, Cheol Seong

“…The transmission-line method (TLM) was adopted to clarify the causes of device performance variation according to the source/drain metal electrode and device…”
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