Search Results - "Choi, Bum Ho"
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Epitaxial growth of multiferroic BiFeO3 thin films with (101) and (111) orientations on (100) Si substrates
Published in Applied physics letters (17-06-2013)“…Multiferroic (101)- and (111)-oriented BiFeO3 thin films were grown on heteroepitaxial substrates of (110) SrRuO3/(100) YSZ/(100) Si and (111) SrRuO3/(111)…”
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Dependence of the Color Tunability on the H2Pc Thickness in DC-Voltage-Driven Organic Light-Emitting Diodes
Published in Applied sciences (24-04-2023)“…Dependence of the color tunability on the metal free Phthalocyanine (H2Pc) layer thickness in DC-voltage-driven organic light-emitting diodes (OLEDs) was…”
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Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures
Published in Applied physics letters (04-08-2014)“…We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical…”
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4
Down-conversion light outcoupling films using imprinted microlens arrays for white organic light-emitting diodes
Published in Dyes and pigments (01-01-2017)“…We have developed down-conversion outcoupling films to enhance the light outcoupling efficiency in white organic light-emitting diodes (OLEDs). The…”
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5
Effects of Thermal Treatment on DC Voltage-Driven Color Conversion in Organic Light-Emitting Diode
Published in Micromachines (Basel) (23-12-2022)“…A DC voltage-dependent color-tunable organic light-emitting diode (CTOLED) was proposed for lighting applications. The CTOLED consists of six consecutive…”
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Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic
Published in IEEE transactions on electron devices (01-04-2002)“…Novel single-electron transistors (SETs) with side-wall depletion gates on a silicon-on-insulator nanometer-scale wire are proposed and fabricated, using the…”
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7
Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory
Published in Micromachines (Basel) (23-09-2019)“…In order to simulate a circuit by applying various logic circuits and full chip using the HSPICE model, which can consider electrical coupling proposed in the…”
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8
Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier
Published in Applied surface science (01-09-2011)“…► Growth and nucleation behavior of Ir films grown by ALD on different interfacial layers were investigated. ► The Ir film grown on the 3-nm-thick TaN surface…”
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Electrical and Optical Properties of Index-Matched Transparent Conducting Oxide Layers for Liquid Crystal on Si Projection Displays
Published in Japanese Journal of Applied Physics (01-06-2013)“…In this study, the characteristics of several kinds of index-matched transparent conducting oxide layers (TCO) were investigated for applications to liquid…”
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10
Effects of Al buffer layer on growth of highly vertically aligned carbon nanotube forests for in situ yarning
Published in Microelectronic engineering (01-05-2010)“…In this study, effects of aluminum (Al) buffer layer on synthesis of highly vertically aligned carbon nanotube (CNT) forests were systematically studied. Tens…”
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Journal Article Conference Proceeding -
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Preparation of Naturally Textured Aluminum-Doped Zinc Oxide Films on Flexible Poly(ether sulfone) Substrate by Radio Frequency Magnetron Sputtering
Published in Japanese Journal of Applied Physics (01-03-2013)“…Transparent conducting oxide (TCO) layers of naturally textured aluminum-doped zinc oxide (AZO) were prepared on flexible poly(ether sulfone) (PES) substrates…”
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12
Wafer-level fabrication of a high-silica v-groove for fiber-optic packaging using deep dry-etching with a dual-frequency high-density plasma
Published in Journal of the Korean Physical Society (01-10-2015)“…We developed a procedure for fabricating deep silica v-grooves of about 70 μ m for fiber-optic applications by using a deep dry-etching with a dual-frequency…”
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13
Effects of in situ plasma treatment on optical and electrical properties of index-matched transparent conducting oxide layer
Published in Applied surface science (15-09-2010)“…We investigated the effects of in situ plasma-treatment on optical and electrical properties of index-matched indium tin oxide (IMITO) thin film. To render the…”
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14
Effects of surface treatment of ITO anode layer patterned with shadow mask technology on characteristics of organic light-emitting diodes
Published in Organic electronics (01-12-2013)“…[Display omitted] •Post-treatment effects of ITO on performance of OLEDs devices are investigated.•ITO patterns have been formed by using shadow mask…”
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15
Morphological and Electrical Properties of Self-Textured Aluminum-Doped Zinc Oxide Films Prepared by Direct Current Magnetron Sputtering for Application to Amorphous Silicon Solar Cells
Published in Japanese Journal of Applied Physics (01-06-2011)“…Self-textured Al-doped zinc oxide (AZO) transparent conducting oxide (TCO) layers were grown by DC magnetron sputtering, and their morphological and electrical…”
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Growth behavior and improved water–vapor-permeation-barrier properties of 10-nm-thick single Al2O3 layer grown via cyclic chemical vapor deposition on organic light-emitting diodes
Published in Organic electronics (01-08-2014)“…[Display omitted] •Self-limited nature in C-CVD was observed.•10-nm-thick Al2O3 layer with density of 3.298g/cm3 and 0.46nm/cycle of deposition rate were grown…”
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The effects of atmospheric pressure plasma on the synthesis of carbon nanotubes
Published in Microelectronic engineering (01-04-2009)“…In this study, we investigated the effects of atmospheric plasma on the synthesis of carbon nanotubes (CNTs) forests. Tall and high CNTs forests have been…”
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Journal Article Conference Proceeding -
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Effect of hydrogen plasma on growth of Ir thin film by plasma-enhanced hybrid atomic layer deposition
Published in Microelectronic engineering (01-10-2012)“…[Display omitted] ► Growth behaviors of Ir films using hybrid ALD were investigated. ► The 3.2nm thick Ir film was grown by hybrid ALD under 50 deposition…”
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Journal Article Conference Proceeding -
20
Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
Published in Microelectronic engineering (01-05-2010)“…The growth behavior of plasma enhanced atomic layer deposited (PEALD) ruthenium (Ru) thin film was systematically studied in the context of its application to…”
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Journal Article Conference Proceeding