Search Results - "Cho, Hyun Kyong"

Laser Liftoff GaN Thin-Film Photonic Crystal GaN-Based Light-Emitting Diodes by Cho, Hyun Kyong, Kim, Sun-Kyung, Bae, Duk Kyu, Kang, Bong-Cheol, Lee, Jeong Soo, Lee, Yong-Hee

“…We fabricated a thin-film vertical-injection light-emitting diode (LED), which uses a highly efficient coherent external scattering of trapped light by…”
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Role of NADPH oxidase-2 in lipopolysaccharide-induced matrix metalloproteinase expression and cell migration by Kim, So‐Yeon, Lee, Jin‐Gu, Cho, Woo‐Sung, Cho, Kyong‐Hyun, Sakong, Jun, Kim, Jae‐Ryong, Chin, Byung‐Rho, Baek, Suk‐Hwan

“…This study examined the hypothesis that the control of NADPH oxidase‐2 (Nox2)‐mediated reactive oxygen species (ROS) regulates the expression of matrix…”
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Minimization of wafer bowing in GaN-based vertical light-emitting diodes by selective area growth using metal-organic chemical vapor deposition by Ryu, Jae Hyoung, Chandramohan, S., Kim, Hee Yun, Kim, Hyun Kyu, Kang, Ji Hye, Hong, Chang-Hee, Kyong Cho, Hyun, Song, Hyun Don, Kwon, Ho-Ki

“…The effect of selective area growth (SAG) on wafer bowing of GaN-based light-emitting diodes (LEDs) is investigated. The SAG of LED structures was carried out…”
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Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs by Glaab, Johannes, Lobo-Ploch, Neysha, Cho, Hyun Kyong, Filler, Thomas, Gundlach, Heiko, Guttmann, Martin, Hagedorn, Sylvia, Lohan, Silke B., Mehnke, Frank, Schleusener, Johannes, Sicher, Claudia, Sulmoni, Luca, Wernicke, Tim, Wittenbecher, Lucas, Woggon, Ulrike, Zwicker, Paula, Kramer, Axel, Meinke, Martina C., Kneissl, Michael, Weyers, Markus, Winterwerber, Ulrike, Einfeldt, Sven

“…Multiresistant pathogens such as methicillin-resistant Staphylococcus aureus (MRSA) cause serious postoperative infections. A skin tolerant far-UVC (< 240 nm)…”
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Comparison of Ultraviolet B Light‐Emitting Diodes with Single or Triple Quantum Wells by Kolbe, Tim, Knauer, Arne, Ruschel, Jan, Rass, Jens, Kyong Cho, Hyun, Hagedorn, Sylvia, Glaab, Johannes, Lobo Ploch, Neysha, Einfeldt, Sven, Weyers, Markus

“…Light‐emitting diodes (LEDs) with an emission wavelength of 310 nm containing either a single or a triple quantum well are compared regarding their efficiency…”
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Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes by Hyun Kyong Cho, Ostermay, Ina, Zeimer, Ute, Enslin, Johannes, Wernicke, Tim, Einfeldt, Sven, Weyers, Markus, Kneissl, Michael

“…Highly reflective metal contacts for the p-layers of AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) emitting at 305 nm have been investigated…”
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Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates by Lobo-Ploch, Neysha, Mehnke, Frank, Sulmoni, Luca, Cho, Hyun Kyong, Guttmann, Martin, Glaab, Johannes, Hilbrich, Katrin, Wernicke, Tim, Einfeldt, Sven, Kneissl, Michael

“…Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9 ± 0.3) mW and an external quantum efficiency of (0.36 ± 0.07) % at 100 mA are…”
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Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes by Kolbe, Tim, Knauer, Arne, Rass, Jens, Cho, Hyun Kyong, Hagedorn, Sylvia, Einfeldt, Sven, Kneissl, Michael, Weyers, Markus

“…The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have…”
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Author Correction: Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs by Glaab, Johannes, Lobo‑Ploch, Neysha, Cho, Hyun Kyong, Filler, Thomas, Gundlach, Heiko, Guttmann, Martin, Hagedorn, Sylvia, Lohan, Silke B., Mehnke, Frank, Schleusener, Johannes, Sicher, Claudia, Sulmoni, Luca, Wernicke, Tim, Wittenbecher, Lucas, Woggon, Ulrike, Zwicker, Paula, Kramer, Axel, Meinke, Martina C., Kneissl, Michael, Weyers, Markus, Winterwerber, Ulrike, Einfeldt, Sven

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Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes by Cho, Hyun Kyong, Jang, Junho, Choi, Jeong-Hyeon, Choi, Jaewan, Kim, Jongwook, Lee, Jeong Soo, Lee, Beomseok, Choe, Young Ho, Lee, Ki-Dong, Kim, Sang Hoon, Lee, Kwyro, Kim, Sun-Kyung, Lee, Yong-Hee

“…The nano-imprint lithography method was employed to incorporate wide-area (375 x 330 mum(2)) photonic-crystal (PC) patterns onto the top surface of GaN-based…”
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Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes by Kim, Sun-Kyung, Song, Hyun Don, Ee, Ho-Seok, Choi, Hyun Min, Cho, Hyun Kyong, Lee, Yong-Hee, Park, Hong-Gyu

“…We demonstrate light extraction from metal reflector-based AlGaInP photonic crystal (PhC) light-emitting diodes (LEDs). The photons reflected by a…”
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Experimental study of light output power for vertical GaN-based light-emitting diodes with various textured surface and thickness of GaN layer by Kwack, Ho-Sang, Lim, Hyun Soo, Song, Hyun-Don, Jung, Sung-Hoon, Cho, Hyun Kyong, Kwon, Ho-Ki, Oh, Myeong Seok

“…The light output power (LOP) of vertical-type GaN-based light emitting diodes (LED) with surface roughness (texture) can be changed by texture size, density,…”
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HOLE AND INTERFACE TRAPS IN Mg-DOPED Al0.1Ga0.9N/GaN GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION by Cho, H K, Hong, C-H, Suh, E-K, Lee, H J

“…Deep level traps in Mg-doped Al0.1Ga0.9N/undoped GaN heterostructures grown by metalorganic vapor deposition with different Cp2Mg molar flow rates are studied…”
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Enhanced light extraction efficiency of far-ultraviolet-C LEDs by micro-LED array design by Rass, Jens, Cho, Hyun Kyong, Guttmann, Martin, Prasai, Deepak, Ruschel, Jan, Kolbe, Tim, Einfeldt, Sven

“…AlGaN-based far-UVC light emitting diodes (LEDs) with an emission wavelength of 233 nm were fabricated in the form of micro-LED arrays with emitter diameters…”
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226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW by Kolbe, Tim, Cho, Hyun Kyong, Hagedorn, Sylvia, Rass, Jens, Ruschel, Jan, Einfeldt, Sven, Weyers, Markus

“…Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well…”
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226nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2mW by Kolbe, Tim, Cho, Hyun Kyong, Hagedorn, Sylvia, Rass, Jens, Ruschel, Jan, Einfeldt, Sven, Weyers, Markus

“…Far‐ultraviolet‐C (far‐UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n‐AlGaN contact layers, quantum well…”
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Impact of Plasma Treatment of n-Al 0.87 Ga 0.13 N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs by Cho, Hyun Kyong, Rass, Jens, Mogilatenko, Anna, Kunkel, Kevin, Unger, Ralph-Stephan, Schilling, Marcel, Wernicke, Tim, Einfeldt, Sven

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Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities by Ruschel, Jan, Glaab, Johannes, Susilo, Norman, Hagedorn, Sylvia, Walde, Sebastian, Ziffer, Eviathar, Cho, Hyun Kyong, Ploch, Neysha Lobo, Wernicke, Tim, Weyers, Markus, Einfeldt, Sven, Kneissl, Michael

“…The impact of different AlN/sapphire template technologies [i.e., planar, epitaxial lateral overgrown (ELO), and high temperature annealed sputtered ELO] is…”
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234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer by Kolbe, Tim, Knauer, Arne, Rass, Jens, Cho, Hyun Kyong, Hagedorn, Sylvia, Bilchenko, Fedir, Muhin, Anton, Ruschel, Jan, Kneissl, Michael, Einfeldt, Sven, Weyers, Markus

“…Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm with different polarization-doped AlGaN hole injection layers…”
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Impact of plasma treatment of n-Al0.87Ga0.13N:Si surfaces on V/Al/Ni/Au contacts in far-UVC LEDs by Cho, Hyun Kyong, Rass, Jens, Mogilatenko, Anna, Kunkel, Kevin, Unger, Ralph-Stephan, Schilling, Marcel, Wernicke, Tim, Einfeldt, Sven

“…We investigated the effect of treating the surface of n-Al 0.87 Ga 0.13 N:Si by O 2 or SF 6 plasma on the properties of subsequently deposited and annealed…”
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