Search Results - "Cho, Dooho"

A Non-Volatile Ternary Content-Addressable Memory Cell for Low-Power and Variation-Toleration Operation by Cho, Dooho, Kim, Kyungmin, Yoo, Changsik

“…A magnetic tunneling junction (MTJ)-based ternary content-addressable memory (TCAM) cell is proposed which consists of 12 transistors and two MTJs. The…”
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13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate by Jung, Wontaeck, Kim, Hyunggon, Kim, Do-Bin, Kim, Tae-Hyun, Lee, Namhee, Shin, Dongjin, Kim, Minyoung, Rho, Youngsik, Lee, Hun-Jong, Hyun, Yujin, Park, Jaeyoung, Kim, Taekyung, Kim, Hwiwon, Lee, Gyeongwon, Lee, Jisang, Jang, Joonsuc, Park, Jungmin, Kim, Sion, Jeon, Su Chang, Kim, Suyong, Song, Jung-Ho, Kim, Min-Seok, Lee, Taesung, Chun, Byung-Kwan, Kim, Tongsung, Lee, Young Gyu, Lee, Hokil, Lee, Soowoong, Lee, Hwaseok, Cho, Dooho, Nam, Sang-Wan, Kim, Yeomyung, Yoon, Kunyong, Lee, Yoonjae, Kim, Sunghoon, Hwang, Jungseok, Song, Raehyun, Jang, Hyunsik, Son, Jaeick, Jeon, Hongsoo, Lee, Myunghun, Lee, Mookyung, Kim, Kisung, Lee, Eungsuk, Lee, Myeongwoo, Jo, Sungkyu, Kim, Chan Ho, Park, Jong Chul, Yun, Kyunghwa, Seol, Soonock, Cho, Ji-Ho, Lee, Seungjae, Lee, Jin-Yub, Hur, Sung-Hoi

“…3D-NAND Flash memory is evaluated as a key device that is handling the explosive data growth, showing steady bit growth and areal density increases >30% every…”
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Catechin gallates are NADP +-competitive inhibitors of glucose-6-phosphate dehydrogenase and other enzymes that employ NADP + as a coenzyme by Shin, Eui Seok, Park, Jiyoung, Shin, Jae-Min, Cho, Dooho, Cho, Si Young, Shin, Dong Wook, Ham, Mira, Kim, Jae Bum, Lee, Tae Ryong

“…Recent studies have shown that glucose-6-phosphate dehydrogenase (G6PD) is an effectual therapeutic target for metabolic disorders, including obesity and…”
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7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate by Seungjae Lee, Jin-yub Lee, Il-han Park, Jongyeol Park, Sung-won Yun, Min-su Kim, Jong-hoon Lee, Minseok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-no Im, Hyejin Yim, Kyung-hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun-wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Hirano, Makoto, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kye-hyun Kyung, Jeong-Hyuk Choi

“…NAND flash memory is widely used as a cost-effective storage with high performance [1-2]. This paper presents a 128Gb multi-level cell (MLC) NAND flash memory…”
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