Search Results - "Chizh, A. L."

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  1. 1

    High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures by Zhuravlev, K. S., Gilinsky, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L., Mikitchuk, K. B.

    Published in Technical physics (01-09-2021)
    “…The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the…”
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    Journal Article
  2. 2

    High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines by Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M., Chistokhin, I. B.

    Published in Technical physics letters (01-07-2019)
    “…Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs…”
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    Journal Article
  3. 3

    p-i-n Photodiodes for Frequency Mixing in Radio-Over-Fiber Systems by Malyshev, S.A., Chizh, A.L.

    Published in Journal of lightwave technology (01-11-2007)
    “…In this paper, the theory of optoelectronic frequency mixing in p-i-n photodiodes is presented. The theory is experimentally approved by measurements of…”
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    Journal Article
  4. 4

    High-Power InGaAs/InP Partially Depleted Absorber Photodiodes for Microwave Generation by Malyshev, S.A., Chizh, A.L., Vasileuski, Y.G.

    Published in Journal of lightwave technology (2008)
    “…A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on…”
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    Journal Article
  5. 5

    Silicon photodiode with a grid p-n junction by Blynskii, V. I., Vasileuskii, Yu. G., Malyshev, S. A., Chizh, A. L.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2007)
    “…Silicon photodiodes with a grid-structured p-region were studied. Analytical expressions for the capacitance of such photodiodes were derived. The influence of…”
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    Journal Article
  6. 6

    P-I-N photodiodes for optical control of microwave circuits by Malyshev, S.A., Chizh, A.L.

    “…The full-device model of the p-i-n photodiode based on a harmonic balance method and drift-diffusion description of charge carrier transport in semiconductor…”
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    Journal Article
  7. 7

    Frequency conversion of optical signals in p-i-n photodiodes by Malyshev, S.A., Galwas, B.A., Chizh, A.L., Dawidczyk, J., Andrievski, V.F.

    “…A planar InGaAsP/InGaAs/InGaAsP p-i-n photodiode has been fabricated and used for frequency conversion of two optical signals. Nonlinear properties of the…”
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    Journal Article Conference Proceeding
  8. 8

    Photovaractor for remote optical control of microwave circuits by Malyshev, S.A., Galwas, B.A., Piotrowski, J., Chizh, A.L., Szczepaniak, Z.R.

    “…A photovaractor for the remote optical control of microwave circuits was studied. The photovaractor was fabricated as a p-i-n photodiode placed in a pigtailed…”
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    Journal Article
  9. 9
  10. 10

    Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes by Malyshev, S. A., Chizh, A. L., Vasileuski, Yu. G.

    Published in Semiconductors (Woodbury, N.Y.) (01-09-2006)
    “…A stationary physical model of the p-i-n photodiode based on a two-dimensional drift-diffusion scheme of charge transport in multilayer In{sub x}Ga{sub…”
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    Journal Article
  11. 11

    Modelling of the photodiode in various microwave applications by Chizh, A.L., Malyshev, S.A.

    “…The general model of the microwave photodiode based on the harmonic balance method is represented. The application of this model for modelling of the…”
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    Conference Proceeding
  12. 12

    High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures by Zhuravlev, K. S., Valisheva, N. A., Aksenov, M. S., Dmitriev, D. D., Toropov, A. I., Chistokhin, I. B., Gilinsky, A. M., Protasov, D. Y., Malyshev, S. A., Chizh, A. L., Mikitchuk, K. B.

    “…Dark current-voltage characteristics, sensitivity and microwave characteristics of photodiodes based on InAlAs/InGaAs (0.6-1.5 μm)/InP(001) heteroepitaxial…”
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    Conference Proceeding
  13. 13
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  15. 15

    2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings by Malyshev, S.A., Chizh, A.L., Vasileuski, Y.G.

    “…Numerical simulation of a guardring-free planar InP/InGaAs avalanche photodiode is presented. The device incorporates p- and n- charge sheets, which spatially…”
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    Conference Proceeding
  16. 16

    Mixed device/circuit model of the high-speed p-i-n photodiode by Malyshev, S.A., Chizh, A.L., Vasileuski, Y.G.

    “…The mixed device/circuit model of the p-i-n photodiode based on 2-D drift-diffusion scheme of charge carrier transport in semiconductor heterostructures and…”
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    Conference Proceeding
  17. 17

    Modeling and Characterization of Photovaractor for Microwave Optoelectronics by Malyshev, S.A., Chizh, A.L.

    Published in 2001 31st European Microwave Conference (01-09-2001)
    “…Optical control of microwave circuits using photodiode junction capacitance variation due to optical illumination has some advantages such as simplicity and…”
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    Conference Proceeding
  18. 18

    Photovaractor for optically controlled microwave circuits by Malyshev, S.A., Andrievski, V.F., Budko, T.O., Chen Chao, Chizh, A.L., Gushchinskaya, E.V., Liu Baolin, Romanova, L.I., Zaporozhets, E.V.

    “…The photovaractor for optically controlled microwave circuits was designed and studied. The photovaractor module was fabricated as a planar p-i-n InP/InGaAs…”
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    Conference Proceeding
  19. 19

    Modeling and characterization of microwave p-i-n photodiode by Chizh, A.L., Malyshev, S.A.

    “…A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the…”
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    Conference Proceeding