Search Results - "Chiu, Y.J."
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1
Long‐term mortality after acute coronary syndromes among patients with normal, mildly reduced, or reduced ejection fraction
Published in ESC Heart Failure (01-02-2023)“…Aims Left ventricular ejection fraction (LVEF) ≤ 40% is a well‐established risk factor for mortality after acute coronary syndromes (ACS). However, the…”
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2
Novel T-rail electrodes for substrate removed low-voltage high-speed GaAs/AlGaAs electrooptic modulators
Published in IEEE transactions on microwave theory and techniques (01-02-2005)“…A novel traveling-wave electrode utilizing capacitively loaded T-rail elements was developed for low-voltage high-speed substrate-removed GaAs/AlGaAs…”
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3
THE INFLUENCE OF VIBRATION MODE ON RESPONSE OF TENNIS RACKET
Published in Journal of biomechanics (2007)Get full text
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4
Variation of atmospheric Be-7 in relation to PM concentrations
Published in Applied radiation and isotopes (01-08-2013)“…In the present study, the influences of particulate matter (PM) and seasonal monsoons on 7Be concentrations in surface air (CBe) are elucidated. The 7Be and…”
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5
Deposition of beryllium-7 in Hsinchu, Taiwan
Published in Applied radiation and isotopes (01-02-2012)“…In the present study, factors that influence the distribution and variation of 7Be in Hsinchu, Taiwan were elucidated. The 7Be activity including the…”
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6
Superlattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation
Published in IEEE photonics technology letters (01-11-2000)“…We report 85 C continuous-wave electrically pumped operation of a 1528-nm vertical-cavity laser. An InP-InGaAsP active region was wafer bonded to GaAs-AlGaAs…”
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7
Superlattice barrier 1528-nm vertical-cavity laser with 85/spl deg/C continuous-wave operation
Published in IEEE photonics technology letters (01-11-2000)“…We report 85/spl deg/C continuous-wave electrically pumped operation of a 1528-nm vertical-cavity laser. An InP-InGaAsP active region was wafer bonded to the…”
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8
Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs
Published in Applied physics letters (10-07-2000)“…The role of a low-temperature-grown GaAs (LT GaAs) layer on the lateral oxidation of an Al0.98Ga0.02As/GaAs layer structure has been studied by transmission…”
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9
Sunitinib‐induced hyperammonaemia in a patient with pancreatic neuroendocrine tumour
Published in Journal of clinical pharmacy and therapeutics (01-08-2013)“…Summary What is known and objective Sunitinib can improve progression‐free survival and overall survival in patients with advanced pancreatic neuroendocrine…”
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10
Fused InP-GaAs vertical coupler filters
Published in IEEE photonics technology letters (01-01-1999)“…A novel vertical coupler filter based on fused InGaAsP-InP and AlGaAs-GaAs waveguide structures is proposed and demonstrated. The large material dispersion…”
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11
Long wavelength vertical cavity lasers
Published in Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) (1999)“…The need for low cost, high speed telecommunication sources demands the maturation of long wavelength vertical cavity lasers (VCLs). Both long haul fiber optic…”
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Conference Proceeding -
12
Microwave Performance of Undercut Active Region for Traveling Wave Electroabsorption Modulator
Published in 2005 Pacific Rim Conference on Lasers & Electro-Optics (2005)“…A method based on undercut-etching-active-region is proposed to enhance the high-speed performance of the traveling wave electroabsorption modulator. It is…”
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Conference Proceeding -
13
1.55 /spl mu/m absorption, high speed, high saturation power p-i-n photodetectors using low-temperature grown GaAs
Published in International Topical Meeting on Microwave Photonics. Technical Digest (including High Speed Photonics Components Workshop) (Cat. No.98EX181) (1998)“…By utilizing low-temperature grown GaAs (LT-GaAs) as the absorption material, subbandgap detection is possible due to mid gap defects and As precipitates. In…”
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Conference Proceeding -
14
1.55 micron in-plane lasers with p-Al/sub 0.7/Ga/sub 0.3/As cladding layers
Published in Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting (1997)“…Semiconductor lasers operating at 1.55 /spl mu/m are important components for long haul fiber-optic communications. However, their strong temperature…”
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Conference Proceeding -
15
Superlattice barrier 1528 nm vertical cavity laser with 85/spl deg/C continuous wave operation
Published in Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) (2000)“…We report 85 C continuous wave operation of a 1528 nm VCSEL with an InP-InGaAsP active region and wafer fused GaAs-AlGaAs mirrors. A superlattice barrier was…”
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Conference Proceeding -
16
InP-GaAs fused vertical coupler filters
Published in Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) (1998)“…We demonstrate a novel vertical coupler structure based on wafer fusion technology that combines two different material systems: AlGaAs-GaAs with a low…”
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Conference Proceeding -
17
Laboratory evaluation of candidate bait toxicants against the imported fire ant, Solenopsis invicta
Published in The Florida entomologist (01-06-1973)“…Toxic baits of 319 chemicals were evaluated in the laboratory to determine their effectiveness in controlling the imported fire ant, Solenopsis invicta Buren…”
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