Search Results - "Chini, A"

JAZ family of repressors is the missing link in jasmonate signalling by Chini, A, Fonseca, S, Fernandez, G, Adie, B, Chico, J.M, Lorenzo, O, Garcia-Casado, G, Lopez-Vidriero, I, Lozano, F.M, Ponce, M.R

“…Jasmonates are essential phytohormones for plant development and survival. However, the molecular details of their signalling pathway remain largely unknown…”
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Retrospective Study of Obesity in Children with Down Syndrome by Basil, Janet S., MS, Santoro, Stephanie L., MD, Martin, Lisa J., PhD, Healy, Katherine Wusik, MS, Chini, Barbara A., MD, Saal, Howard M., MD

“…Objectives To assess whether children with Down syndrome in the US are at an increased risk for obesity, we determined the obesity prevalence and analyzed…”
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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs by Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U.K., Canali, C., Zanoni, E.

“…Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements. Gate- and drain-lag effects…”
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High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates by Huili Xing, Dora, Y., Chini, A., Heikman, S., Keller, S., Mishra, U.K.

“…High-voltage Al/sub 0.22/Ga/sub 0.78/N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation…”
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Treatment of digestate from swine sludge continuous stirred tank reactor to reduce total carbon and total solids content by Chini, A., Hollas, C. E., Bolsan, A. C., Antes, F. G., Treichel, H., Kunz, A.

“…Anaerobic digestion is a biological process that can partially convert organic matter into gases with potential to energy generation. However, in case of…”
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Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation by Chini, A., Di Lecce, V., Esposto, M., Meneghesso, G., Zanoni, E.

“…In this letter, the effects of dc stress on GaN high-electron-mobility transistors' performance are investigated by means of experimental measurements and…”
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Percutaneous endoscopic jejunostomy (PEJ) in patients with dumping syndrome: Evaluation of our center on a series of clinical cases by Sivero, L., Maione, F., Chini, A., Volpe, S., Maione, R., Pesce, M., Palomba, G., Vitale, R., Gennarelli, N., Sivero, S.

“…The Dumping syndrome occurs in a variable percentage of subjects undergoing surgery involving the esophageal and gastric district. The treatment makes use of…”
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Traps localization and analysis in GaN HEMTs by Chini, A., Soci, F., Meneghesso, G., Meneghini, M., Zanoni, E.

“…A simple experimental technique aimed at the spatial localization of the dominant trap states involved in drain current dispersion in GaN HEMTs will be…”
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Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs by Cioni, M., Bertacchini, A., Mucci, A., Verzellesi, G., Pavan, P., Chini, A.

“…RON and VTH drifts in TO-247 SiC packaged MOSFETs are investigated in this paper. The use of a novel on-the-fly measurement setup able to capture their…”
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Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs by Chini, A., Buttari, D., Coffie, R., Shen, L., Heikman, S., Chakraborty, A., Keller, S., Mishra, U.K.

“…Record power density and high-efficiency operation with AlGaN-GaN high-electron mobility transistor (HEMT) devices have been achieved by adopting a…”
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High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation by Shen, L., Coffie, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S.P., Mishra, U.K.

“…In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface…”
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A C-band high-dynamic range GaN HEMT low-noise amplifier by Hongtao Xu, Sanabria, C., Chini, A., Keller, S., Mishra, U.K., York, R.A.

“…A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6…”
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Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs by Palacios, T., Chini, A., Buttari, D., Heikman, S., Chakraborty, A., Keller, S., DenBaars, S.P., Mishra, U.K.

“…Double-channel structures have been used in AlGaN/GaN high electron mobility transistors to reduce the access resistance. Carrier densities as high as 2.9/spl…”
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Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs by Chini, A., Soci, F., Fantini, F., Nanni, A., Pantellini, A., Lanzieri, C., Meneghesso, G., Zanoni, E.

“…•GaN HEMT with different gate field-plate geometries have been tested.•Increasing field-plate length improves the device large signal performances.•Increasing…”
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Causes of Persistent Obstructive Sleep Apnea Despite Previous Tonsillectomy and Adenoidectomy in Children with Down Syndrome as Depicted on Static and Dynamic Cine MRI by Donnelly, Lane F, Shott, Sally R, LaRose, Connor R, Chini, Barbara A, Amin, Raouf S

“…Our purpose was to evaluate the causes of persistent obstructive sleep apnea despite previous tonsillectomy and adenoidectomy in children with Down syndrome as…”
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Field plate related reliability improvements in GaN-on-Si HEMTs by Chini, A., Soci, F., Fantini, F., Nanni, A., Pantellini, A., Lanzieri, C., Bisi, D., Meneghesso, G., Zanoni, E.

“…State of the art GaN on Silicon HEMTs fabricated with and without a field-plate structure have been tested by means of DC and RF reliability tests. The…”
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p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) by Coffie, R., Buttari, D., Heikman, S., Keller, S., Chini, A., Shen, L., Mishra, U.K.

“…A novel p-capped GaN-AlGaN-GaN high-electron mobility transistor has been developed to minimize radio-frequency-to-dc (RF-DC) dispersion before passivation…”
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Power and linearity characteristics of GaN MISFETs on sapphire substrate by Chini, A., Wittich, J., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.

“…The improvement of device performance arising from the adoption of a MIS gate structure in GaN field-effect transistor (FET) is presented. GaN MISFET/MESFET…”
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Effect of elevated curing temperatures on the strength and durability of concrete by CHINI, A. R, ACQUAYE, L

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Upper airway motion depicted at cine MR imaging performed during sleep: comparison between young Patients with and those without obstructive sleep apnea by Donnelly, Lane F, Surdulescu, Victoria, Chini, Barbara A, Casper, Keith A, Poe, Stacy A, Amin, Raouf S

“…To compare the patterns of dynamic airway motion depicted on cine magnetic resonance (MR) images obtained during sleep between young patients with and those…”
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