Search Results - "Chin, W V"
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A rare cause of back pain and radiculopathy - spinal tophi: a case report
Published in Journal of medical case reports (08-01-2019)“…Gout is a monosodium urate deposition disease which is prevalent worldwide. The usual manifestations are crystal arthropathy and tophi deposition in the soft…”
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Hall and Drift mobilities in molecular beam epitaxial grown GaAs
Published in Journal of electronic materials (01-11-1993)“…Nominally undoped and Si-doped GaAs samples were grown with Hall concentrations of 10 sup 1 sup 5 -10 sup 1 sup 9 cm sup - sup 3 and mobilities measured at 77…”
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Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p -doped InGaAs/AlGaAs strained multiple quantum wells
Published in Applied physics letters (12-09-1994)“…We report the correlation of photoluminescence (PL), infrared intersubband absorption, and double crystal x-ray diffraction (DCXRD) data for a p-doped…”
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The influence of thermal gradients on the characterization of Schottky-barrier diodes
Published in IEEE transactions on electron devices (01-01-1990)“…A simple and fast method of measuring the electrical performance of a packaged array of Schottky diodes as a function of temperature is described. The…”
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Electron mobility in GaSb
Published in Solid-state electronics (1995)“…The effect of carrier concentration and compensation on the electron mobilities in GaSb at 300 and 77 K are investigated. Since the energy of the L band minima…”
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Ohmic contacts to n-type and p-type GaSb
Published in Solid-state electronics (1996)“…We report the specific contact resistance at zero bias, R c, and the barrier heights of rapidly thermally alloyed AuGe contacts on 10 17 cm −3 n-GaSb. An…”
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Hole Transport in the InSbInAs material system
Published in Solid state communications (01-02-1995)“…We discuss the scattering mechanisms limiting hole mobility in InAs, InSb and InAsSb. Transport in the binaries is limited by ionised impurity scattering at…”
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MBE and MOCVD growth of AlGaAsAlAsGaAs double barrier multiple quantum well infrared detector
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-12-1995)“…We have studied both the molecular-beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) grown AlGaAsAlAsGaAs double barrier multiple…”
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Journal Article Conference Proceeding -
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Hydrogenation passivation of acceptors in MOCVD grown p-INSB
Published in Solid state communications (01-05-1996)“…We report on the effects of hydrogenation of InSb GaAs epilayers. The as-grown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV…”
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Growth of InAs from monoethyl arsine
Published in Journal of crystal growth (02-01-1995)“…We report the use of monoethyl arsine, in conjunction with trimethyl indium, for the low temperature growth of InAs, and demonstrate its viability as a source…”
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Electron mobility in In sub(0.53)Ga sub(0.47)As as a function of concentration and temperature
Published in Microelectronics (01-01-1995)“…The electron mobility in In sub(0.53)Ga sub(0.47)As as a function of temperature has been calculated by the variational principle over a carrier concentration…”
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Current characteristics of the double-barrier Al 0.25 Ga 0.75 As/ Al 0.45 Ga 0.55 As/GaAs single-quantum-well structures
Published in Physical review. B, Condensed matter (01-08-1995)Get full text
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Electronic band structure of Al x Ga 1 − x As/ Al y Ga 1 − y As/GaAs double-barrier superlattices
Published in Physical review. B, Condensed matter (01-07-1994)Get full text
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Transport mechanism of Gamma - and X-band electrons in AlxGa1-xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors
Published in Physical review. B, Condensed matter (15-07-1996)Get full text
Journal Article -
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Current characteristics of the double-barrier Al0.25Ga0.75As/Al0.45Ga0.55As/GaAs single-quantum-well structures
Published in Physical review. B, Condensed matter (15-08-1995)Get full text
Journal Article -
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Electronic band structure of AlxGa1-xAs/AlyGa1-yAs/GaAs double-barrier superlattices
Published in Physical review. B, Condensed matter (15-07-1994)Get full text
Journal Article