Search Results - "Chin, W V"

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  1. 1

    A rare cause of back pain and radiculopathy - spinal tophi: a case report by Wan, S A, Teh, C L, Jobli, A T, Cheong, Y K, Chin, W V, Tan, B B

    Published in Journal of medical case reports (08-01-2019)
    “…Gout is a monosodium urate deposition disease which is prevalent worldwide. The usual manifestations are crystal arthropathy and tophi deposition in the soft…”
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    Journal Article
  2. 2

    Hall and Drift mobilities in molecular beam epitaxial grown GaAs by CHIN, V. W. L, OSOTCHAN, T, VAUGHAN, M. R, TANSLEY, T. L, GRIFFITHS, G. J, KACHWALLA, Z

    Published in Journal of electronic materials (01-11-1993)
    “…Nominally undoped and Si-doped GaAs samples were grown with Hall concentrations of 10 sup 1 sup 5 -10 sup 1 sup 9 cm sup - sup 3 and mobilities measured at 77…”
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    Journal Article
  3. 3

    Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p -doped InGaAs/AlGaAs strained multiple quantum wells by Chin, V. W. L., Tansley, T. L., Zhang, D. H., Radhakrishnan, K., Yoon, S. F., Clark, A.

    Published in Applied physics letters (12-09-1994)
    “…We report the correlation of photoluminescence (PL), infrared intersubband absorption, and double crystal x-ray diffraction (DCXRD) data for a p-doped…”
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    Journal Article
  4. 4

    The influence of thermal gradients on the characterization of Schottky-barrier diodes by Chin, V.W.L., Newbery, S.M.

    Published in IEEE transactions on electron devices (01-01-1990)
    “…A simple and fast method of measuring the electrical performance of a packaged array of Schottky diodes as a function of temperature is described. The…”
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    Journal Article
  5. 5

    Electron mobility in GaSb by Chin, V.W.L.

    Published in Solid-state electronics (1995)
    “…The effect of carrier concentration and compensation on the electron mobilities in GaSb at 300 and 77 K are investigated. Since the energy of the L band minima…”
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    Journal Article
  6. 6

    Ohmic contacts to n-type and p-type GaSb by Subekti, A, Chin, V.W.L, Tansley, T.L

    Published in Solid-state electronics (1996)
    “…We report the specific contact resistance at zero bias, R c, and the barrier heights of rapidly thermally alloyed AuGe contacts on 10 17 cm −3 n-GaSb. An…”
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    Journal Article
  7. 7

    Hole Transport in the InSbInAs material system by Egan, R.J., Chin, V.W.L., Tansley, T.L.

    Published in Solid state communications (01-02-1995)
    “…We discuss the scattering mechanisms limiting hole mobility in InAs, InSb and InAsSb. Transport in the binaries is limited by ionised impurity scattering at…”
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    Journal Article
  8. 8

    MBE and MOCVD growth of AlGaAsAlAsGaAs double barrier multiple quantum well infrared detector by Osotchan, T., Chin, V.W.L., Tansley, T.L., Usher, B.F., Clark, A., Egan, R.J.

    “…We have studied both the molecular-beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) grown AlGaAsAlAsGaAs double barrier multiple…”
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    Journal Article Conference Proceeding
  9. 9

    Hydrogenation passivation of acceptors in MOCVD grown p-INSB by Egan, R.J., Chin, V.W.L., Butcher, K.S.A., Tansley, T.L.

    Published in Solid state communications (01-05-1996)
    “…We report on the effects of hydrogenation of InSb GaAs epilayers. The as-grown MOCVD InSb is p-type with an acceptor activation energy of 16 meV. The 16 meV…”
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    Journal Article
  10. 10

    Growth of InAs from monoethyl arsine by Egan, R.J., Tansley, T.L., Chin, V.W.L.

    Published in Journal of crystal growth (02-01-1995)
    “…We report the use of monoethyl arsine, in conjunction with trimethyl indium, for the low temperature growth of InAs, and demonstrate its viability as a source…”
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    Journal Article
  11. 11

    Electron mobility in In sub(0.53)Ga sub(0.47)As as a function of concentration and temperature by Chin, V W L, Osotchan, T, Tansley, T L

    Published in Microelectronics (01-01-1995)
    “…The electron mobility in In sub(0.53)Ga sub(0.47)As as a function of temperature has been calculated by the variational principle over a carrier concentration…”
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    Journal Article
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