Search Results - "Chimenton, A."

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  1. 1

    Modeling of SET seasoning effects in Phase Change Memory arrays by Zambelli, C., Chimenton, A., Olivo, P.

    Published in Microelectronics and reliability (01-06-2012)
    “…The experimental analysis of the electrical behavior of Phase Change Memory arrays evidenced a seasoning effect both on SET and RESET state. The previous…”
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    Journal Article
  2. 2

    Empirical investigation of SET seasoning effects in Phase Change Memory arrays by Zambelli, C., Chimenton, A., Olivo, P.

    Published in Solid-state electronics (01-04-2011)
    “…► We present the SET seasoning phenomenon in Phase Change Memory (PCM) arrays. ► We characterized the SET seasoning in relation to the erasing scheme exploited…”
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    Journal Article
  3. 3

    Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories by Chimenton, A., Olivo, P.

    Published in IEEE transactions on electron devices (01-09-2007)
    “…We propose a new methodology for a fast top-down identification of disturbs in large arrays of nonvolatile memories. The new strategy aims at providing the set…”
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    Journal Article
  4. 4

    Data retention after heavy ion exposure of floating gate memories: analysis and simulation by Larcher, L., Cellere, G., Paccagnella, A., Chimenton, A., Candelori, A., Modelli, A.

    Published in IEEE transactions on nuclear science (01-12-2003)
    “…Floating gate (FG) memories are the most important of current nonvolatile memory technologies. We are investigating the long-term retention issues in advanced…”
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  5. 5

    Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation by Cellere, G., Paccagnella, A., Larcher, L., Chimenton, A., Wyss, J., Candelori, A., Modelli, A.

    Published in IEEE transactions on nuclear science (01-12-2002)
    “…We are presenting new data on the charge loss in large floating gate (FG) memory arrays subjected to heavy ion irradiation. Existing models for charge loss…”
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    Journal Article
  6. 6

    Impact of Pulsed Operation on Performance and Reliability of Flash Memories by Chimenton, A., Irrera, F., Olivo, P.

    Published in IEEE transactions on electron devices (01-06-2007)
    “…We tested the impact of pulsed operation (PO) on standard NOR flash memory arrays. PO is a new writing scheme featuring a sequence of ultrashort high-voltage…”
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    Journal Article
  7. 7

    Overerase phenomena: an insight into flash memory reliability by Chimenton, A., Pellati, P., Olivo, P.

    Published in Proceedings of the IEEE (01-04-2003)
    “…The most important reliability issues related to the erasing operation in flash memories are, still today, caused by single bit failures. In particular, the…”
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    Journal Article
  8. 8

    Radiation effects on floating-gate memory cells by Cellere, G., Pellati, P., Chimenton, A., Wyss, J., Modelli, A., Larcher, L., Paccagnella, A.

    Published in IEEE transactions on nuclear science (01-12-2001)
    “…We have addressed the problem of threshold voltage (V/sub TH/) variation in flash memory cells after heavy-ion irradiation by using specially designed array…”
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    Journal Article
  9. 9

    Impact of high tunneling electric fields on erasing instabilities in NOR flash memories by Chimenton, A., Olivo, P.

    Published in IEEE transactions on electron devices (01-01-2006)
    “…Experimental data and analysis show that overerase effects in NOR Flash memories increase with the electric field used during erasing. We found that the…”
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    Journal Article
  10. 10

    Constant charge erasing scheme for flash memories by Chimenton, A., Pellati, P., Olivo, P.

    Published in IEEE transactions on electron devices (01-04-2002)
    “…This paper presents a new erasing scheme for flash memories based on a sequence of bulk to gate-box pulses with increasing voltage amplitude. It is…”
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    Journal Article
  11. 11

    Improving performance and reliability of NOR-Flash arrays by using pulsed operation by Chimenton, A., Irrera, F., Olivo, P.

    Published in Microelectronics and reliability (01-09-2006)
    “…Pulsed Operation (PO) is a new writing methodology based on a sequence of high voltage ultra-short pulses allowing of improving both performance and…”
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    Journal Article Conference Proceeding
  12. 12

    Reliability of flash memory erasing operation under high tunneling electric fields by Chimenton, A., Olivo, P.

    “…Experimental results show that the use of high electric fields during erasing of flash memories leads to a degradation of the reliability due to the increase…”
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    Conference Proceeding
  13. 13

    Analysis of erratic bits in flash memories by Chimenton, A., Pellati, P., Olivo, P.

    “…This work presents experimental results concerning erratic behavior in flash memories obtained by tracking the threshold voltage dynamics during any single…”
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    Conference Proceeding
  14. 14

    A Statistical Model of Erratic Behaviors in Flash Memory Arrays by Chimenton, A., Zambelli, C., Olivo, P.

    Published in IEEE transactions on electron devices (01-11-2011)
    “…We present a statistical model of erratic behaviors in Flash memory arrays based on a Markov chain model. The model parameters are experimentally evaluated…”
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    Statistical Modeling of Secondary Path During Erase Operation in Phase Change Memories by Zambelli, C., Chimenton, A., Olivo, P.

    Published in IEEE transactions on electron devices (01-03-2012)
    “…In this paper, we analyze the read current shifts that have been observed after the erase operations in phase change memory arrays. Experimental data analyses…”
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    Journal Article
  17. 17

    Set of Electrical Characteristic Parameters Suitable for Reliability Analysis of Multimegabit Phase Change Memory Arrays by Chimenton, A., Zambelli, C., Olivo, P., Pirovano, A.

    “…In this paper we define a set of few electrical parameters aimed at giving a complete picture of the phase change memory array behavior during writing/reading…”
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    Conference Proceeding
  18. 18

    A New Analytical Model of the Erasing Operation in Phase-Change Memories by Chimenton, A., Zambelli, C., Olivo, P.

    Published in IEEE electron device letters (01-03-2010)
    “…In this letter, we present a new analytical model of the erasing operation in phase-change memories (PCMs). The model successfully describes the dynamics of…”
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    Journal Article
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    Call for papers: ICEAA - IEEE APWC by Chimenton, A., Olivo, P.

    Published in IEEE transactions on electron devices (01-04-2003)
    “…For pt.I see ibid., vol.50, pp.1009-14 (2003). This paper presents experimental results about the erratic erase phenomena occurring in Flash Memories with the…”
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    Journal Article