Search Results - "Chimenton, A."
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Modeling of SET seasoning effects in Phase Change Memory arrays
Published in Microelectronics and reliability (01-06-2012)“…The experimental analysis of the electrical behavior of Phase Change Memory arrays evidenced a seasoning effect both on SET and RESET state. The previous…”
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Empirical investigation of SET seasoning effects in Phase Change Memory arrays
Published in Solid-state electronics (01-04-2011)“…► We present the SET seasoning phenomenon in Phase Change Memory (PCM) arrays. ► We characterized the SET seasoning in relation to the erasing scheme exploited…”
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Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories
Published in IEEE transactions on electron devices (01-09-2007)“…We propose a new methodology for a fast top-down identification of disturbs in large arrays of nonvolatile memories. The new strategy aims at providing the set…”
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Data retention after heavy ion exposure of floating gate memories: analysis and simulation
Published in IEEE transactions on nuclear science (01-12-2003)“…Floating gate (FG) memories are the most important of current nonvolatile memory technologies. We are investigating the long-term retention issues in advanced…”
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Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation
Published in IEEE transactions on nuclear science (01-12-2002)“…We are presenting new data on the charge loss in large floating gate (FG) memory arrays subjected to heavy ion irradiation. Existing models for charge loss…”
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Impact of Pulsed Operation on Performance and Reliability of Flash Memories
Published in IEEE transactions on electron devices (01-06-2007)“…We tested the impact of pulsed operation (PO) on standard NOR flash memory arrays. PO is a new writing scheme featuring a sequence of ultrashort high-voltage…”
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Overerase phenomena: an insight into flash memory reliability
Published in Proceedings of the IEEE (01-04-2003)“…The most important reliability issues related to the erasing operation in flash memories are, still today, caused by single bit failures. In particular, the…”
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Radiation effects on floating-gate memory cells
Published in IEEE transactions on nuclear science (01-12-2001)“…We have addressed the problem of threshold voltage (V/sub TH/) variation in flash memory cells after heavy-ion irradiation by using specially designed array…”
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Impact of high tunneling electric fields on erasing instabilities in NOR flash memories
Published in IEEE transactions on electron devices (01-01-2006)“…Experimental data and analysis show that overerase effects in NOR Flash memories increase with the electric field used during erasing. We found that the…”
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Constant charge erasing scheme for flash memories
Published in IEEE transactions on electron devices (01-04-2002)“…This paper presents a new erasing scheme for flash memories based on a sequence of bulk to gate-box pulses with increasing voltage amplitude. It is…”
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Improving performance and reliability of NOR-Flash arrays by using pulsed operation
Published in Microelectronics and reliability (01-09-2006)“…Pulsed Operation (PO) is a new writing methodology based on a sequence of high voltage ultra-short pulses allowing of improving both performance and…”
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Journal Article Conference Proceeding -
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Reliability of flash memory erasing operation under high tunneling electric fields
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)“…Experimental results show that the use of high electric fields during erasing of flash memories leads to a degradation of the reliability due to the increase…”
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Conference Proceeding -
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Analysis of erratic bits in flash memories
Published in 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) (2001)“…This work presents experimental results concerning erratic behavior in flash memories obtained by tracking the threshold voltage dynamics during any single…”
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Conference Proceeding -
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A Statistical Model of Erratic Behaviors in Flash Memory Arrays
Published in IEEE transactions on electron devices (01-11-2011)“…We present a statistical model of erratic behaviors in Flash memory arrays based on a Markov chain model. The model parameters are experimentally evaluated…”
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Statistical Modeling of Secondary Path During Erase Operation in Phase Change Memories
Published in IEEE transactions on electron devices (01-03-2012)“…In this paper, we analyze the read current shifts that have been observed after the erase operations in phase change memory arrays. Experimental data analyses…”
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Set of Electrical Characteristic Parameters Suitable for Reliability Analysis of Multimegabit Phase Change Memory Arrays
Published in 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (01-01-2008)“…In this paper we define a set of few electrical parameters aimed at giving a complete picture of the phase change memory array behavior during writing/reading…”
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Conference Proceeding -
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A New Analytical Model of the Erasing Operation in Phase-Change Memories
Published in IEEE electron device letters (01-03-2010)“…In this letter, we present a new analytical model of the erasing operation in phase-change memories (PCMs). The model successfully describes the dynamics of…”
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Erratic erase in flash memories. I. Basic experimental and statistical characterization
Published in IEEE transactions on electron devices (01-04-2003)Get full text
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Call for papers: ICEAA - IEEE APWC
Published in IEEE transactions on electron devices (01-04-2003)“…For pt.I see ibid., vol.50, pp.1009-14 (2003). This paper presents experimental results about the erratic erase phenomena occurring in Flash Memories with the…”
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