Search Results - "Chim, W.K."

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation by Yan Ny Tan, Chim, W.K., Wee Kiong Choi, Moon Sig Joo, Byung Jin Cho

“…The charge storage and program/erase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different…”
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Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition by Wong, L.M., Chiam, S.Y., Chim, W.K., Pan, J.S., Wang, S.J.

“…Highly transparent and conductive aluminum-doped zinc oxide thin films were deposited on low-cost flexible polyethylene terephthalate substrates at room…”
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Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions by Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Chun, S.R., Liu, Q., Ng, C.M.

“…In this study, we investigate the surface and interfacial reactions involved in the growth of yttrium oxide through the oxidation of yttrium metal on…”
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Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask by Chen, Z, Lei, Y, Chew, H.G, Teo, L.W, Choi, W.K, Chim, W.K

“…We explore here the use of an anodic alumina membrane as a mask for the fabrication of highly ordered nanodots. The masks were synthesized using a two-step…”
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High-thermal-stability (HfO 2) 1− x (Al 2O 3) x film fabricated by dual-beam laser ablation by Li, Q., Wang, S.J., Ng, T.H., Chim, W.K., Huan, A.C.H., Ong, C.K.

“…The high-thermal-stability amorphous (HfO 2) 1− x (Al 2O 3) x thin films have been fabricated on p-type Si (100) using novel dual-beam pulse laser ablation…”
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Analysis of the DCIV peaks in electrically stressed pMOSFETs by Bin Bin Jie, Chim, W.K., Ming-Fu Li, Lo, K.F.

“…This paper presents the effects of Fowler-Nordheim (FN) and hot-carrier (HC) stress in the direct-current current voltage (DCIV) measurements. The effect of…”
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Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement by Hong, Y.D., Yew Tong Yeow, Chim, W.K., Jian Yan, Kin Mun Wong

“…Scanning capacitance microscopy (SCM) is a dopant profile extraction tool with nanometer spatial resolution. While it is based on the high-frequency MOS…”
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Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements by Chim, W.K., Wong, K.M., Yeow, Y.T., Hong, Y.D., Lei, Y., Teo, L.W., Choi, W.K.

“…This article proposes a method for evaluating the quality of the overlying oxide on samples used in scanning capacitance microscopy (SCM) dopant profile…”
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Investigation of interface traps in LDD pMOST's by the DCIV method by Jie, B.B., Li, M.F., Lou, C.L., Chim, W.K., Chan, D.S.H., Lo, K.F.

“…Interface traps in submicron buried-channel LDD pMOSTs, generated under different stress conditions, are investigated by the direct-current current-voltage…”
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Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing by Chim, W.K., Yeo, B.P., Lim, P.S., Chan, D.S.H.

“…Latent damage in thin oxides, caused by high-field impulse stressing, can lead to increased trap generation in the device during the subsequent hot-carrier…”
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Examining the transparency of gallium-doped zinc oxide for photovoltaic applications by Wong, L.M., Chiam, S.Y., Huang, J.Q., Wang, S.J., Chim, W.K., Pan, J.S.

“…In this work, we examine the optical properties of gallium-doped ZnO (GZO) thin films grown by pulsed laser deposition with varying oxygen pressures and…”
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Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate by Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M.

“…We studied the effects of adding yttrium (Y) in bulk lanthanum aluminate (LaAlO3 or LAO) by investigating the quaternary compound oxide, lanthanum yttrium…”
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Comparative study of aluminium-doped zinc oxide and ruthenium–aluminium co-doped zinc oxide by magnetron co-sputtering by Wong, L.M., Wang, S.J., Chim, W.K.

“…Highly oriented polycrystalline aluminium-doped (Al-doped) and ruthenium–aluminium (Ru–Al) co-doped zinc oxide are prepared on borosilicate glass and…”
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Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric by Ng, T.H., Ho, V., Teo, L.W., Tay, M.S., Koh, B.H., Chim, W.K., Choi, W.K., Du, A.Y., Tung, C.H.

“…We have fabricated trilayer insulator metal–insulator–semiconductor (MIS) structures consisting of hafnium dioxide (HfO 2) as the high-κ tunnel dielectric, a…”
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Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealing by Choi, W.K., Chew, H.G., Ho, V., Ng, V., Chim, W.K., Ho, Y.W., Ng, S.P.

“…The formation of germanium (Ge) nanocrystals under rapid thermal annealing was attributed mainly to the reduction of Ge suboxides by silicon (Si) diffused from…”
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Nano-modification on hydrogen-passivated Si surfaces by a laser-assisted scanning tunneling microscope operating in air by Mai, Z.H, Lu, Y.F, Song, W.D, Chim, W.K

“…A novel method for nanofabrication, i.e., laser-induced nano-modification on hydrogen (H)-passivated Si surfaces under a tip of a scanning tunneling microscope…”
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Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement by Hong, Y.D., Yew Tong Yeow, Chim, W.-K., Kin-Mun Wong, Kopanski, J.J.

“…Although scanning capacitance microscopy (SCM) is based on the MOS capacitance theory, the measurement frequency is 915-MHz instead of 100 kHz to 1 MHz in…”
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Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO 2/pure Ge/rapid thermal oxide memory structure by Heng, C.L., Teo, L.W., Ho, Vincent, Tay, M.S., Lei, Y., Choi, W.K., Chim, W.K.

“…A metal-insulator-semiconductor device with a tri-layer structure consisting of sputtered silicon dioxide (SiO 2) (∼50 nm)–evaporated pure germanium (Ge) (2.3…”
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Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure by HENG, C. L, TEO, L. W, HO, Vincent, TAY, M. S, LEI, Y, CHOI, W. K, CHIM, W. K

“…A metal-insulator-semiconductor device with a trilayer structure consisting of sputtered silicon dioxide (SiO2) (#~50 nm)-evaporated pure germanium (Ge) (2.3…”
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Structural characterisation of polycrystalline SiGe thin film by Teh, L.K., Choi, W.K., Bera, L.K., Chim, W.K.

“…Amorphous Si 1− x Ge x films, with a varying germanium fraction, were deposited using radio frequency (r.f.) sputtering and annealed under different conditions…”
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