Search Results - "Chien, Ting Yao"

An Innovated 80V-100V High-Side Side-Isolated N-LDMOS Device by Yangi, Shao Ming, Sheu, Gene, Chien, Ting Yao, Wu, Chieh Chih, Lee, Tzu Chieh, Wu, Ching Yuan, Lai, Chiu Chung

“…We used TCAD Synopsys 3D tools and device simulators to propose an innovative device structure of 80V-100V high-side NLDMOS by using the silicon to…”
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Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology by Yang, Shao-Ming, Sheu, Gene, Lee, Tzu Chieh, Chien, Ting Yao, Wu, Chieh Chih, Lin, Yun Jung

“…High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and…”
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Study of impact of LATID on HCI reliability for LDMOS devices by Chandrashekhar, Sheu, Gene, Yang, Shao Mingo, Chien, Ting Yao, Lin, Yun Jung, Wu, Chieh Chih, Lee, Tzu Chieh

“…This paper demonstrates electrical degradation due to Hot Carrier Injection (HCI) stress for nLDMOS devices with different Large Angle Tilted Implantation…”
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Analysis of Kirk effect of an innovated high side Side-Isolated N-LDMOS device by Lai, Ciou Jhong, Sheu, Gene, Chien, Ting Yao, Wu, Chieh Chih, Lee, Tzu Chieh, Deivasigamani, Ravi, Wu, Ching Yuan, Chandrashekhar, Yang, Shao Ming

“…An ESOA of LDMOS device is very critical for power device performance. Kirk effect is the one of the major problem which leads to poor ESOA performance. The…”
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Study on High-side LDMOS energy capability Improvement by Yun-Jung Lin, Shao-Ming Yang, Ting Yao Chien, Ching-Yuan Wu, Aanand

“…Improvement of Laterally Diffused Metal Oxide Semiconductor (LDMOS) energy capability, Unclamped inductive switching (UIS) is used to characterize ruggedness…”
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