Search Results - "Chiah, S. B."
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1
Composite Sub-surface Model for RF GaN-HEMTs
Published in 2024 25th International Symposium on Quality Electronic Design (ISQED) (03-04-2024)“…A new approach to RF compact modeling with a "sub-surface model" for the nonlinear substrate current/charge (rather than the conventional linear R/C…”
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Conference Proceeding -
2
Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates
Published in IEEE transactions on electron devices (01-01-2007)“…We present a rigorously derived analytical Poisson solution for undoped semiconductors and apply the general solution to generic MOSFETs with two gates,…”
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Journal Article -
3
A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects
Published in Solid-state electronics (01-12-2004)“…A compact Ids model with physical drain-conductance (gds) modeling for deep-submicron MOSFETs is formulated based on first-principle momentum-/energy-balance…”
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4
Single-piece polycrystalline silicon accumulation/depletion/inversion model with implicit/explicit surface-potential solutions
Published in Applied physics letters (16-05-2005)“…A single-piece analytical equation for the surface potential at the polycrystalline-silicon (poly-Si) gate of a metal-oxide-semiconductor field-effect…”
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5
Physics-based single-piece charge model for strained-Si MOSFETs
Published in IEEE transactions on electron devices (01-07-2005)“…A physics-based single-piece charge model for strained-silicon (s-Si) MOSFETs from accumulation to strong-inversion regions is presented. The model is…”
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6
Enabling the integrated circuits of the future
Published in 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01-06-2015)“…The incorporation of new materials into CMOS scaling has become a necessity. Our previous work in SiGe and III-V integration shows promise in allowing further…”
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Conference Proceeding -
7
Effect of substrate doping on the capacitance-Voltage characteristics of strained-silicon pMOSFETs
Published in IEEE electron device letters (01-01-2006)“…The effect of substrate doping on the capacitance-voltage characteristics of a surface-channel strained-silicon p-channel MOSFET has been studied to explain a…”
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8
Source-drain symmetry in unified regional MOSFET model
Published in IEEE electron device letters (01-05-2004)“…This letter investigates major sources of asymmetry in a MOSFET compact model by comparing source versus bulk reference in the drain current, effective field,…”
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Journal Article -
9
Xsim: unified regional approach to compact modeling for next generation CMOS
Published in Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004 (2004)“…This paper describes the approaches in the development of Xsim, a unified regional threshold-voltage-based model for deep-submicron MOSFETs. In comparison to…”
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Conference Proceeding -
10
Design and implementation of a digital audio tone control unit using an efficient FIR filter structure
Published in Proceedings of Digital Processing Applications (TENCON '96) (1996)“…In the present multimedia systems the audio tone control unit is implemented in analogue form. We present an efficient FIR filter structure with low…”
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Conference Proceeding -
11
Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits
Published in 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) (2001)“…This paper presents a summary of a unified compact I/sub ds/ model for deep-submicron (DSM) MOSFET's developed from scratch over the past few years. The model…”
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Conference Proceeding