DNA Biosensor Applications for Poly-Silicon Nanowire Field-Effect Transistors

In this paper, a normal nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to...

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Bibliographic Details
Published in:	2016 IEEE 16th International Conference on Bioinformatics and Bioengineering (BIBE) pp. 182 - 185
Main Authors:	Shao-Wei Lu, Chia-Hsien Li, Aanand, Imam, Syed Sarwar, Shao-Ming Yang, Ming-Jen Fan, Gene Sheu
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-10-2016
Subjects:	DNA dsDNA Ids Saturation MOSFET Nanobioscience Sensitivity sensor Silicon ssDNA Surface treatment Vth
Online Access:	Get full text
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Summary:	In this paper, a normal nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type poly-silicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride buried oxide nanowire realizes drain saturation current (Ids) sensor to compensate device variation.
ISSN:	2471-7819
DOI:	10.1109/BIBE.2016.18