Search Results - "Chi, Yaqing"

Single-Event Effect Characterization of 16 GHz Phase-Locked Loop in Sub-20 nm FinFET Technology by Sun, Hanhan, Wu, Zirui, Luo, Deng, Liang, Bin, Chen, Jianjun, Chi, Yaqing

“…This article proposes a radiation-tolerant phase-locked loop (PLL) for space-based applications. The proportional and integral path is proposed to mitigate the…”
Get full text

Soft Error Tolerant Bandgap Reference Utilizing Single-Event Transient Filtering Technique by Liu, Jingtian, Wang, Dongsheng, Liang, Bin, Chi, Yaqing, Luo, Deng, Xu, Shi

“…Bandgap is a critical block for numerous electronic systems, which provides stable voltage reference for multiple sub-modules over process, voltage supply, and…”
Get full text

Research on Single Event Transients in Linear Voltage Regulators in a 28 nm Bulk CMOS Technology by Shen, Fan, Chen, Jianjun, Chi, Yaqing, Liang, Bin, Sun, Hanhan, Wen, Yi, Guo, Hao, Wang, Xun

“…Single event transients (SETs) sensitivity in two 28 nm bulk CMOS linear voltage regulators are studied by experiments and simulations. The differences between…”
Get full text

ASET and TID Characterization of a Radiation Hardened Bandgap Voltage Reference in a 28-nm Bulk CMOS Technology by Chen, Jianjun, Chi, Yaqing, Liang, Bin, Yuan, Hengzhou, Wen, Yi, Xing, Haiyuan, Yao, Xiaohu

“…Analog single-event transient (ASET) and total ionizing dose (TID) characterization of a radiation-hardened bandgap voltage reference (BGR) is investigated in…”
Get full text

Effect of Cell Placement on Single-Event Transient Pulse in a Bulk FinFET Technology by Huang, Pengcheng, Zhao, Zhenyu, Chi, Yaqing, Liang, Bin, Ma, Chiyuan, Sun, Qian, Wu, Zhenyu

“…In this article, five different cell placement structures of a vertical inverter chain were designed in a commercial bulk FinFET technology to investigate the…”
Get full text

Higher NMOS single event transient susceptibility compared to PMOS in sub-20nm bulk FinFET by Sun, Qian, Guo, Yang, Liang, Bin, Tao, Ming, Chi, Yaqing, Huang, Pengcheng, Wu, Zhenyu, Luo, Deng, Chen, Jianjun

“…The single event transient (SET) susceptibility in the sub-20nm bulk FinFET process is studied in this paper. It is firstly found that NmOs is more sensitive…”
Get full text

A Body-Biasing Technique for Single-Event Transient Mitigation in 28-nm Bulk CMOS Process by Liu, Jingtian, Liang, Bin, Guo, Yang, Chen, Jianjun, Chi, Yaqing, Sun, Qian, Song, Shengyu, Yuan, Hengzhou

“…Single-event transient (SET) glitches can be modified by body-biasing controlling techniques. In this article, a body-biasing configuration is proposed in…”
Get full text

On-Chip Relative Single-Event Transient/Single- Event Upset Susceptibility Test Circuit for Integrated Circuits Working in Real Time by Hao, Peipei, Chen, Shuming, Wu, Zhenyu, Chi, Yaqing

“…With technology scaling down, scale of the integrated circuit (IC) increases rapidly. It is unrealistic to harden every element in the IC, hence it is critical…”
Get full text

Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM by Sun, Qian, Chi, Yaqing, Guo, Yang, Liang, Bin, Tao, Ming, Wu, Zhenyu, Guo, Hongxia, Zheng, Qiwen, Chen, Wangyong, Gao, Yulin, Zhao, Peixiong, Li, Xingji, Chen, Jianjun, Luo, Deng, Sun, Hanhan, Fang, Yahao

“…This paper discusses the stuck bits induced by the gate breakdown of PMOS in the sub-20 nm FinFET static random access memory (SRAM) device. After the…”
Get full text

Heavy-Ion-Induced Charge Sharing Measurement With a Novel Uniform Vertical Inverter Chains (UniVIC) SEMT Test Structure by Huang, Pengcheng, Chen, Shuming, Chen, Jianjun, Liang, Bin, Chi, Yaqing

“…In this paper, a novel uniform vertical inverter chains (UniVIC) single event multiple transient (SEMT) test structure is proposed for the first time. Charge…”
Get full text

A SET-Tolerant High-Frequency Multibiased Multiphase Voltage-Controlled Oscillator for Phase Interpolator-Based Clock and Data Recovery by Hengzhou, Yuan, Hao, Sang, Bin, Liang, Jianjun, Chen, Yaqing, Chi, Weixia, Xu, Yang, Guo

“…A high-frequency multibiased multiphase voltage-controlled oscillator (MBM-VCO) for clock and data recovery is proposed. The operating frequency of the…”
Get full text

Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies by Bin, Liang, Yi, Wen, Jianjun, Chen, Yaqing, Chi, Xiaohu, Yao

Get full text

Influence of Oxygen Vacancy Density on the Polaronic Configuration in Rutile by Liu, Rulin, Fang, Liang, Hao, Yue, Chi, Yaqing

“…Polaronic configurations that were introduced by oxygen vacancy in rutile TiO₂ crystal have been studied by the DFT + method. It is found that the building…”
Get full text

Experimental characterization of the dominant multiple nodes charge collection mechanism in metal oxide-semiconductor transistors by Song, Ruiqiang, Chen, Shuming, Chi, Yaqing, Wu, Zhenyu, Liang, Bin, Chen, Jianjun, Xu, Jingyan, Hao, Peipei, Yu, Junting

“…We propose an experimental method to investigate the dominant multiple node charge collection mechanism. A transistor array-based test structure is used to…”
Get full text

Characterization of Single-Event Transient Pulse Quenching among Dummy Gate Isolated Logic Nodes in 65 nm Twin-Well and Triple-Well CMOS Technologies by Jianjun, Chen, Shuming, Chen, Yaqing, Chi, Bin, Liang

“…As chip technologies scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes. The so-called pulse quenching effect,…”
Get full text

Characterization of Single-Event Transient Pulse Broadening Effect in 65 nm Bulk Inverter Chains Using Heavy Ion Microbeam by Chi, Yaqing, Song, Ruiqiang, Shi, Shuting, Liu, Biwei, Cai, Li, Hu, Chunmei, Guo, Gang

“…The propagation induced pulse broadening (PIPB) effect of the SET pulses in 65nm bulk inverter chains is characterized and discussed generated by the heavy ion…”
Get full text

Dependence of the vortex formation process on the perpendicular magnetic anisotropy constant in perpendicular magnetic tunnel junctions by Yang, Maosen, Fang, Liang, Chi, Yaqing

“…We investigate the dependence of the vortex formation process on the perpendicular magnetic anisotropy (PMA) constant in a perpendicular magnetic tunnel…”
Get full text

Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain by Wu, Anquan, Liang, Bin, Chi, Yaqing, Wu, Zhenyu

“…The reliability of integrated circuits under advanced process nodes is facing more severe challenges. Single-event transients (SET) are an important cause of…”
Get full text

A system-level method for hardening phase-locked loop to single-event effects by Liang, Bin, Xu, Xinyu, Yuan, Hengzhou, Chen, Jianjun, Luo, Deng, Chi, Yaqing, Sun, Hanhan

“…Abstract To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional…”
Get full text

An SEU/SET-Tolerant Phase Frequency Detector With Double-Loop Self-Sampling Technology for Clock Data Recovery by Hengzhou, Yuan, Jianjun, Chen, Bin, Liang, Yaqing, Chi, Xi, Chen, Yang, Guo

“…A hardened phase frequency detector (PFD) employing double-loop self-sampling technology is proposed for clock and data recovery. The PFD can remove the error…”
Get full text