Search Results - "Chi, P.H."

On the effects of non-uniform property distribution due to compression in the gas diffusion layer of a PEMFC by Chi, P.H., Chan, S.H., Weng, F.B., Su, Ay, Sui, P.C., Djilali, N.

“…The purpose of the present study is to investigate both experimentally and theoretically the effect of GDL porosity non-uniformity on fuel cell performance due…”
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Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions by Niu Jin, Sung-Yong Chung, Rice, A.T., Berger, P.R., Thompson, P.E., Rivas, C., Lake, R., Sudirgo, S., Kempisty, J.J., Curanovic, B., Rommel, S.L., Hirschman, K.D., Kurinec, S.K., Chi, P.H., Simons, D.S.

“…Si/SiGe resonant interband tunnel diodes (RITDs) employing /spl delta/-doping spikes that demonstrate negative differential resistance (NDR) at room…”
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Positive secondary ion yield enhancement of metal elements using trichlorotrifluoroethane and tetrachloroethene backfilling by Chi, P.H., Gillen, G.

“…Positive secondary ion yields are strongly enhanced by the presence of reactive gas species. Oxygen primary ion beam or oxygen backfilling is commonly used for…”
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Epitaxial Si-based tunnel diodes by Thompson, P.E, Hobart, K.D, Twigg, M.E, Rommel, S.L, Jin, N, Berger, P.R, Lake, R, Seabaugh, A.C, Chi, P.H, Simons, D.S

“…Tunneling devices in combination with transistors offer a way to extend the performance of existing technologies by increasing circuit speed and decreasing…”
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Donor ion-implantation doping into SiC by Rao, Mulpuri V., Tucker, J., Holland, O. W., Papanicolaou, N., Chi, P. H., Kretchmer, J. W., Ghezzo, M.

“…Dopant electrical activation and dopant thermal stability results of As- and Sb-implanted 6H-SiC epitaxial layers and N ion implantations into bulk…”
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Material and n–p junction characteristics of As- and Sb-implanted SiC by Tucker, Jesse B., Rao, Mulpuri V., Holland, O.W., Chi, P.H., Braga, G.C.B., Freitas, J.A., Papanicolaou, N.

“…Single and multiple energy As and Sb implantations were performed into p-type 6H–SiC epitaxial layers at room temperature (RT) and 800°C. Secondary ion mass…”
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Acceptor ion-implantation in SiC by Handy, Evan M., Rao, Mulpuri V., Holland, O.W., Jones, K.A., Chi, P.H.

“…Single and multiple energy Al, B and Ga ion-implantations were performed into n-type 6H–SiC epitaxial layers. Empirical formulae for the range statistics of…”
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Elevated temperature nitrogen implants in 6H-SiC by Gaedner, Jason, Rao, Mulpuri V., Holland, O. W., Kelner, G., Simons, David S., Chi, Peter H., Andrews, John M., Kretchmer, J., Ghezzo, M.

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Rapid thermal annealing of ion implanted 6H-SiC by microwave processing by Gardner, Jason A., Rao, Mulpuri V., Tian, Y. L., Holland, O. W., Roth, E. G., Chi, P. H., Ahmad, I.

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Ion implantation doping of OMCVD grown GaN by Edwards, A., Rao, Mulpuri V., Molnar, B., Wickenden, A. E., Holland, W., Chi, P. H.

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PN junction formation in 6HSiC by acceptor implantation into n-type substrate by Rao, Mulpuri V., Gardner, Jason, Griffiths, Peter, Holland, O.W., Kelner, G., Chi, P.H., Simons, D.S.

“…A1 and B implantations were performed into n-type 6H-bulk SiC and epitaxial layers at both room temperature and 850°C. Annealings were performed in the…”
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Co, Fe, and Ti implants in InGaAs and Co implants in InP at 200°C by RAO, M. V, GULWADI, S. M, SAVITRI MULPURI, SIMONS, D. S, CHI, P. H, CANEAU, C, HONG, W.-P, HOLLAND, O. W, DIETRICH, H. B

“…Elevated temperature (200[degrees]C) single- and multiple-energy Co implants in n-type InP, Co and Fe implants in n-type In[sub 0.53]Ga[sub 0.47]As, and Ti…”
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SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes by Niu Jin, Rice, A.T., Berger, P.R., Thompson, P.E., Chi, P.H., Simons, D.S.

“…Si/SiGe resonant interband tunnel diodes (RITD) employing /spl delta/-doping spikes of P and B that demonstrate negative differential resistance (NDR) at room…”
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