Search Results - "Chernykh, A. I"

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    k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures by Lev, L. L., Maiboroda, I. O., Husanu, M.-A., Grichuk, E. S., Chumakov, N. K., Ezubchenko, I. S., Chernykh, I. A., Wang, X., Tobler, B., Schmitt, T., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.

    Published in Nature communications (11-07-2018)
    “…Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing…”
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    Journal Article
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    The battery of tests for experimental behavioral phenotyping of aging animals by Gorina, Ya. V., Komleva, Yu. K., Lopatina, O. L., Volkova, V. V., Chernykh, A. I., Shabalova, A. A., Semenchukov, A. A., Olovyannikova, R. Ya, Salmina, A. B.

    Published in Advances in gerontology (01-04-2017)
    “…The purpose of the study was to develop a battery of tests to study social and cognitive impairments for behavioral phenotyping of aged experimental animals…”
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    Gold Metallogeny of the Eastern Tannu-Ola Ore District, Tuva Republic by Chernykh, A. I., Shirobokov, A. Yu, Arsentieva, I. V.

    Published in Geology of ore deposits (01-10-2024)
    “…The Elegest-Mezhegei, Aptara, and Shivilig forecasted gold ore clusters, along with the Kharalyg and Irbitei forecasted gold–silver–polymetallic ore clusters,…”
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    Large negative velocity gradients in Burgers turbulence by Chernykh, A I, Stepanov, M G

    “…We consider one-dimensional Burgers equation driven by large-scale white-in-time random force. The tails of the velocity gradients probability distribution…”
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    Magnetoresistance and Symmetry of a Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterostructures by Chumakov, N. K., Andreev, A. A., Belov, I. V., Davydov, A. B., Ezubchenko, I. S., Lev, L. L., Morgun, L. A., Nikolaev, S. N., Chernykh, I. A., Shabanov, S. Yu, Strocov, V. N., Valeyev, V. G.

    Published in JETP letters (2024)
    “…The physical characteristics of a two-dimensional electron gas located in the GaN layer near the AlN/GaN interface of AlGaN/AlN/GaN heterostructures have been…”
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    Resistive Switching in Nitride Memristors: Experiment by Ezubchenko, I S, Chernykh, I A, Andreev, A A, Kondratev, O A, Chumakov, N K, Valeyev, V G

    Published in Nanotechnologies in Russia (01-02-2024)
    “…The features of resistive switching in memristors based on crystalline aluminum nitride with a wurtzite structure, grown under technology developed at the…”
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    The Role of Neuroinflammation in Cognitive Functions and Social Interaction in Mice with Age-Dependent Neurodegeneration by Gorina, Ya. V., Lopatina, O. L., Komleva, Yu. K., Chernykh, A. I., Salmina, A. B.

    Published in Human physiology (01-12-2022)
    “…— Early activation of the compensatory mechanism, such as the innate immune response may result in pathological lesion of vessels and their dysfunction,…”
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    Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow by Mayboroda, I. O., Kolobkova, E. M., Grishchenko, Yu. V., Chernykh, I. A., Zanaveskin, M. L., Chumakov, N. K.

    Published in Crystallography reports (01-05-2021)
    “…The formation of β-Si 3 N 4 for subsequent growth of AlGaN and GaN heterostructures of silicon wafers has been studied. It is established that the native oxide…”
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    High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition by Ezubchenko, I. S., Chernykh, M. Ya, Mayboroda, I. O., Trun’kin, I. N., Chernykh, I. A., Zanaveskin, M. L.

    Published in Crystallography reports (2020)
    “…The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has…”
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    The motion of vortices in a two-dimensional bounded region by Geshev, P. I., Chernykh, A. I.

    Published in Thermophysics and aeromechanics (01-11-2018)
    “…The Hamiltonian equations of the motion of a system of N ideal point vortices in a simply connected two-dimensional region have been obtained by the methods of…”
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    Transistors with High Electron Mobility Based on Gallium-Nitride Heterostructures for Millimeter Wavelengths by Ezubchenko, I S, Kolobkova, E M, Andreev, A A, Ya, Chernykh M, Grishchenko, Yu V, Perminov, P A, Chernykh, I A, Zanaveskin, M L

    Published in Nanotechnologies in Russia (01-12-2022)
    “…Abstract—Microwave transistors based on AlN/GaN heterostructures on silicon substrates are fabricated and studied. The maximum specific saturation current is…”
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    GaN-on-Silicon Growth Features: Controlled Plastic Deformation by Ezubchenko, I. S., Chernykh, M. Ya, Perminov, P. A., Grishchenko, J. V., Trun’kin, I. N., Chernykh, I. A., Zanaveskin, M. L.

    Published in Technical physics letters (01-10-2021)
    “…Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapor deposition. Plastic deformations of the substrate are observed…”
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    A Superconducting Joint for 2G HTS Tapes by Kulikov, I. V., Chernykh, M. Y., Krylova, T. S., Ovcharov, A. V., Chernykh, I. A., Zanaveskin, M. L.

    Published in Technical physics letters (01-04-2019)
    “…An approach of the epitaxial jointing of the GdBa 2 Cu 3 O 7 – δ -based tapes using the YBa 2 Cu 3 O 7 – δ layer is proposed. The structural and electrical…”
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    Substrates with Diamond Heat Sink for Epitaxial GaN Growth by Maiboroda, I. O., Chernykh, I. A., Sedov, V. S., Altakhov, A. S., Andreev, A. A., Grishchenko, Yu. V., Kolobkova, E. M., Mart’yanov, A. K., Konov, V. I., Zanaveskin, M. L.

    Published in Technical physics letters (01-05-2021)
    “…Silicon wafers with a polycrystalline diamond heat sink have been fabricated; the silicon and diamond layers have thicknesses of 234 nm and 250 μm,…”
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    Power Characteristics of GaN Microwave Transistors on Silicon Substrates by Chernykh, I. A., Romanovskiy, S. M., Andreev, A. A., Ezubchenko, I. S., Chernykh, M. Y., Grishchenko, J. V., Mayboroda, I. O., Korneev, S. V., Krymko, M. M., Zanaveskin, M. L., Sinkevich, V. F.

    Published in Technical physics letters (01-03-2020)
    “…GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are…”
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    Ohmic Contacts to Europium Oxide for Spintronic Devices by Andreev, A. A., Grishchenko, Yu. V., Chernykh, I. A., Zanaveskin, M. L., Lobanovich, E. F.

    Published in Technical physics letters (01-04-2019)
    “…A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage…”
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    Gallium Nitride–Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors by Ezubchenko, I. S., Chernykh, M. Y., Andreev, A. A., Grishchenko, J. V., Chernykh, I. A., Zanaveskin, M. L.

    Published in Nanotechnologies in Russia (01-07-2019)
    “…— A unique method for forming gallium nitride–based heterostructures on silicon substrates at low growth temperatures (less than 950°C) is proposed and…”
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