Search Results - "Cherng, Y.T."

ZnSTeSe metal-semiconductor-metal photodetectors by Chang, S.J., Su, Y.K., Chen, W.R., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.

“…High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer…”
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ZnCdSeTe-based orange light-emitting diode by Chen, W.R., Chang, S.J., Su, Y.K., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.

“…We report the fabrication of orange light-emitting diodes (LEDs) by introducing Te into the well layers of ZnCdSe-ZnSSe multiple quantum-well active region. It…”
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Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD by Sze, P.W., Wang, N.F., Houng, M.P., Wang, Y.H., Cherng, Y.T., Wang, C.H.

“…To predict the Zn composition accurately in the ZnCdTe compound alloys, the estimation of solid-vapor distribution functions (SVDFs) from equilibrium…”
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Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications by Pitts, O.J., Lackner, D., Cherng, Y.T., Watkins, S.P.

“…InAsSb/InPSb heterojunctions and InAsSb homojunctions were grown by metalorganic vapor phase epitaxy (MOVPE) on GaSb for potential mid-infrared photodetector…”
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Photo-enhanced chemical wet etching of GaN by Ko, C.H., Su, Y.K., Chang, S.J., Lan, W.H., Webb, Jim, Tu, M.C., Cherng, Y.T.

“…In this paper, we report a photo-enhanced chemical etch rate study on two GaN samples of differing structural and electrical quality as a function of the KOH…”
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Nitride-based 2DEG photodetectors with a large AC responsivity by Chang, S.J., Kuan, T.M., Ko, C.H., Su, Y.K., Webb, J.B., Bardwell, J.A., Liu, Y., Tang, H., Lin, W.J., Cherng, Y.T., Lan, W.H.

“…Nitride-based AlGaN/GaN heterostructure two-dimensional electron gas photodetectors have been successfully fabricated by low-pressure metalorganic vapor phase…”
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High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers by Kuan, T.M., Chang, S.J., Su, Y.K., Lin, J.C., Wei, S.C., Wang, C.K., Huang, C.I., Lan, W.H., Bardwell, J.A., Tang, H., Lin, W.J., Cherng, Y.T.

“…Nitride-based GaN/In 0.12Ga 0.88N heterostructure field effect transistors (HFETs) with semi-insulating Mg-doped GaN current blocking layers were successfully…”
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Nitride-based HFETs with carrier confinement layers by Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

“…Nitride-based Al 0.24Ga 0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were successfully fabricated. It was found…”
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Two-step epitaxial lateral overgrowth of GaN by Ko, C.H., Su, Y.K., Chang, S.J., Tsai, T.Y., Kuan, T.M., Lan, W.H., Lin, J.C., Lin, W.J., Cherng, Y.T., Webb, James B.

“…A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a…”
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Analysis of the dark current of focal-plane-array Hg 1− xCd xTe diode by Juang, F.S, Su, Y.K, Chang, S.M, Chang, S.J, Chiang, C.D, Cherng, Y.T

“…Experimental results are presented for current–voltage and dynamic resistance–voltage characteristics of Hg 1− x Cd x Te ion-implanted p–n junction photodiodes…”
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Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching by Su, Y.K, Chang, S.J, Kuan, T.M, Ko, C.H, Webb, J.B, Lan, W.H, Cherng, Y.T, Chen, S.C

“…Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960,…”
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Effects of substrate preheating for the growth of [formula omitted] by MOCVD by Sze, P.W, Wang, N.F, Houng, M.P, Wang, Y.H, Hwang, J.S, Chou, W.Y, Cherng, Y.T, Wang, C.H, Chiang, C.D

“…A process for the growth of ZnCdTe (100) GaAs heteroepitaxial films using metalorganic chemical vapor deposition (MOCVD) has been developed. It is found that…”
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Analysis of the dark current of focal-plane-array Hg1-xCdxTe diode by JUANG, F. S, SU, Y. K, CHANG, S. M, CHANG, S. J, CHIANG, C. D, CHERNG, Y. T

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Nitride-based HFETs with carrier confinement layers by Chang, S.J., Su, Y.K., Kuan, T.M., Ko, C.H., Wei, S.C., Lan, W.H., Cherng, Y.T., Chen, S.C.

“…Nitride-based Al/sub 0.24/Ga/sub 0.76/N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found…”
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Nitride-based devices fabricated by wet etching by Chang, S.J., Su, Y.K., Kuan, T.M., Ko, C.H., Wei, S.C., Lan, W.H., Webb, J.B., Cherng, Y.T., Chen, S.C.

“…Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. Figure 1 shows PEC etch rate for the GaN and Al/sub…”
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ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy by Chen, W.R., Chang, S.J., Su, Y.K., Tsai, T.Y., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.

“…In this study, ZnSe epitaxial layers and ZnSSe/ZnSe strained layer superlattice (SLS) layers were grown on top of bare (100) GaAs substrates by molecular beam…”
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