Search Results - "Cherenack, Kunigunde H."

The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTs by Munzenrieder, N, Cherenack, K H, Troster, G

“…Amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconducting material for use in flexible thin-film-transistor (TFT) fabrication due to the…”
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Impact of Mechanical Bending on ZnO and IGZO Thin-Film Transistors by Cherenack, Kunigunde H, Munzenrieder, Niko S, Troster, Gerhard

“…Both zinc-oxide (ZnO) and gallium-indium-ZnO (IGZO) are attractive as semiconductors to replace hydrogenated amorphous silicon in flexible thin-film…”
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Woven Thin-Film Metal Interconnects by Cherenack, Kunigunde H, Kinkeldei, Thomas, Zysset, Christoph, Tröster, Gerhard

“…The next step in the evolution of electronic textiles (e-textiles) involves the integration of electronics at the yarn level. We aim to integrate "electronic…”
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Highly stable amorphous-silicon thin-film transistors on clear plastic by Hekmatshoar, Bahman, Cherenack, Kunigunde H., Kattamis, Alex Z., Long, Ke, Wagner, Sigurd, Sturm, James C.

“…Hydrogenated amorphous-silicon ( a - Si : H ) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When…”
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Endurance behavior of conductive yarns by de Vries, Hans, Cherenack, Kunigunde H.

“…•Bending fatigue causes failure of the conducting Cu-wires in photonic textiles.•The location of failure is the transition region from rigid to flexible…”
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Locally Reinforced Polymer-Based Composites for Elastic Electronics by Erb, Randall M, Cherenack, Kunigunde H, Stahel, Rudolf E, Libanori, Rafael, Kinkeldei, Thomas, Münzenrieder, Niko, Tröster, Gerhard, Studart, André R

“…A promising approach to fabricating elastic electronic systems involves processing thin film circuits directly on the elastic substrate by standard…”
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Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic by CHERENACK, Kunigunde H, KATTAMIS, Alex Z, HEKMATSHOAR, Bahman, STURM, James C, WAGNER, Sigurd

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Failure Modes in Textile Interconnect Lines by de Vries, H., Cherenack, K. H., Schuurbiers, R., van Os, K.

“…Many commercially available photonic textile products are made by integrating conductive yarns into textiles and attaching light-emitting diodes (LEDs) to…”
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Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic by Hekmatshoar, B., Kattamis, A.Z., Cherenack, K.H., Ke Long, Jian-Zhang Chen, Wagner, S., Sturm, J.C., Rajan, K., Hack, M.

“…We have fabricated active-matrix organic light emitting diode (AMOLED) test arrays on an optically clear high-temperature flexible plastic substrate at process…”
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Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability by KATTAMIS, Alex Z, CHERENACK, Kunigunde H, HEKMATSHOAR, Bahman, CHENG, I-Chun, GLESKOVA, Helena, STURM, James C, WAGNER, Sigurd

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Amorphous-Silicon Thin-Film Transistors Fabricated at 300 ^\hbox on a Free-Standing Foil Substrate of Clear Plastic by Cherenack, K.H., Kattamis, A.Z., Hekmatshoar, B., Sturm, J.C., Wagner, S.

“…We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300 deg C on free-standing clear-plastic foil substrates…”
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Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2/V s for electrons and 0.1 cm2/V s for holes by Han, Lin, Mandlik, Prashant, Cherenack, Kunigunde H., Wagner, Sigurd

“…A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with high field-effect mobilities. The…”
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Amorphous silicon thin-film transistors with field-effect mobilities of 2   cm 2 / V s for electrons and 0.1   cm 2 / V s for holes by Han, Lin, Mandlik, Prashant, Cherenack, Kunigunde H., Wagner, Sigurd

“…A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon ( a -Si : H ) thin-film transistors (TFTs) with high field-effect…”
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61.3: Amorphous Silicon TFT Technology for Rollable OLED Displays by Wagner, Sigurd, Han, Lin, Hekmatshoar, Bahman, Song, Katherine, Mandlik, Prashant, Cherenack, Kunigunde H., Sturm, James C.

“…Amorphous silicon thin‐film transistors were designed for roll‐out OLED screens in hand‐held devices. Separate TFTs reached a saturation current of 6…”
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Effect of \hbox Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability by Kattamis, A.Z., Cherenack, K.H., Hekmatshoar, B., I-Chun Cheng, Gleskova, H., Sturm, J.C., Wagner, S.

“…The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power…”
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Fabricating silicon thin -film transistors on plastic at 300°C by Cherenack, Kunigunde H

“…It is not a trivial task to fabricate displays on plastic and significant challenges arise when clear plastic is used to replace glass as the display…”
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Fabricating silicon thin-film transistors on plastic at 300°C by Cherenack, Kunigunde H

“…It is not a trivial task to fabricate displays on plastic and significant challenges arise when clear plastic is used to replace glass as the display…”
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Amorphous Silicon Thin-Film Transistor Backplanes Deposited at 200 ^} on Clear Plastic for Lamination to Electrophoretic Displays by Kattamis, A.Z., Cheng, I.-C., Ke Long, Hekmatshoar, B., Cherenack, K.H., Wagner, S., Sturm, J.C., Venugopal, S.M., Loy, D.E., O'Rourke, S.M., Allee, D.R.

“…The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane…”
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Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years by Hekmatshoar, B., Cherenack, K.H., Wagner, S., Sturm, J.C.

“…We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of…”
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