Search Results - "Chenevier, B"

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3 by FILLOT, F, MOREL, T, MINORET, S, MATKO, I, MAITREJEAN, S, GUILLAUMOT, B, CHENEVIER, B, BILLON, T

“…This study reports for the first time, the evaluation of the work function and thermal stability of TiN gate material for deep sub-micron CMOS, elaborated by…”
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A very promising piezoelectric property of Ta2O5 thin films. II: Birefringence and piezoelectricity by AUDIER, M, CHENEVIER, B, ROUSSEL, H, VINCENT, L, PENA, A, SALAÜN, A. Lintanf

“…Birefringent and piezoelectric properties of Ta2O5 ceramic thin films of monoclinic and trigonal structures were analyzed. The birefringence, observed by…”
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Anisotropy of thermal expansion in YAlO3 and NdGaO3 by Chaix-Pluchery, O., Chenevier, B., Robles, J. J.

“…YAlO 3 and NdGaO3 thermal expansion coefficients were measured using in situ powder x-ray diffraction in the temperature range of 28–650 °C. They exhibit a…”
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Second order incommensurate phase transition in 25L-Ta2O5 by AUDIER, M, CHENEVIER, B, ROUSSEL, H, LINTANF SALAÜN, A

“…A new structural state 25L-Ta2O5, obtained from sintering and annealing treatments of a Ta2O5 powder, is identified both by electron diffraction and high…”
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Development and functionalisation of Sb doped SnO2 thin films for DNA biochip applications by Stambouli, V., Labeau, M., Matko, I., Chenevier, B., Renault, O., Guiducci, C., Chaudouët, P., Roussel, H., Nibkin, D., Dupuis, E.

“…In view of developing DNA biochips based on electric detection, well controlled DNA functionalisation of conductive substrate electrode is a challenging…”
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A very promising piezoelectric property of Ta2O5 thin films. I: Monoclinic-trigonal phase transition by AUDIER, M, CHENEVIER, B, ROUSSEL, H, VINCENT, L, PENA, A, LINTANF SALAÜN, A

“…Ceramic thin films of tantalum oxide of a new trigonal structure (a=12.713(7) angstrom, alpha = 28.201(0)degrees, space-group R3) were produced by thermal…”
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In situ simultaneous XAS and electrical characterizations of Pt-doped tin oxide thin film deposited by pyrosol method for gas sensors application by Gaidi, M., Chenevier, B., Labeau, M., Hazemann, J.L.

“…Pt-doped polycrystalline tin oxide thin films have been synthesized by a modified chemical vapor deposition process using the pyrolysis of an aerosol generated…”
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Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors by Fillot, F., Maîtrejean, S., Matko, I., Chenevier, B.

“…We have investigated the dependence of the effective work function (EWF) of a poly-p+∕TiN∕SiO2∕Si capacitor as a function of the TiN layer thickness. By using…”
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Electrical properties evolution under reducing gaseous mixtures (H2, H2S, CO) of SnO2 thin films doped with Pd/Pt aggregates and used as polluting gas sensors by Gaidi, M, Chenevier, B, Labeau, M

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Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction by Gergaud, P., Megdiche, M., Thomas, O., Chenevier, B.

“…In situ real-time measurements of stress are performed during solid-state reaction of a palladium thin film with Si(001) or Si(111) single crystals. The stress…”
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Post Si(C)N hillock nucleation and growth in IC copper lines controlled by diffusional creep by Timma, A., Caubet, P., Chenevier, B., Thomas, O., Kaouache, B., Dumas, L., Normandon, P., Giraudin, J.C.

“…Post Si(C)N hillocks are characterized on Cu interconnects networks. Each network is compounded by standard damascene process electroplated Cu lines with given…”
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Epitaxial growth of LaAlO3 on Si(001) using interface engineering by MERCKLING, C, DELHAYE, G, ROBACH, Y, HOLLINGER, G, EL-KAZZI, M, GAILLARD, S, ROZIER, Y, RAPENNE, L, CHENEVIER, B, MARTY, O, SAINT-GIRONS, G, GENDRY, M

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Nanometer-scale period Sc/Cr multilayer mirrors and their thermal stability by Majkova, E., Chushkin, Y., Jergel, M., Luby, S., Holy, V., Matko, I., Chenevier, B., Toth, L., Hatano, T., Yamamoto, M.

“…Results of comprehensive characterization of Sc/Cr multilayers for soft X-ray mirrors working in the water window range (2.4–4.4 nm) are presented. Multilayer…”
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Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects by THOMAS, M, FARCY, A, DELOFFRE, E, CREMER, S, BRUYERE, S, CHENEVIER, B, TORRES, J, GAILLARD, N, PERROT, C, GROS-JEAN, M, MATKO, I, CORDEAU, M, SAIKALY, W, PROUST, M, CAUBET, P

“…To face with the continuous integrated circuit densification, passive components size has to be reduced, particularly for RF and analog applications where lots…”
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Electrical properties under polluting gas (CO) of Pt- and Pd-doped polycrystalline SnO2 thin films: analysis of the metal aggregate size effect by Matko, I, Gaidi, M, Hazemann, J.L, Chenevier, B, Labeau, M

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In-situ EXAFS analysis of the local environment of Pt particles incorporated in thin films of SnO2 semi-conductor oxide used as gas-sensors by Gaidi, M., Labeau, M., Chenevier, B., Hazemann, J.L.

“…A very fine and homogeneous dispersion of metallic nanoparticles (3–5 nm) inside polycrystalline SnO2 films was carried out by modified CVD co-deposition. It…”
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Lateral crystallization of amorphous silicon by germanium seeding by Hakim, M.M.A., Matko, I., Chenevier, B., Ashburn, P.

“…This paper investigates the time and temperature dependence of amorphous silicon lateral crystallization when polycrystalline germanium is used as a seed…”
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Crystal growth of 3C–SiC polytype on 6H–SiC(0 0 0 1) substrate by Diani, M, Simon, L, Kubler, L, Aubel, D, Matko, I, Chenevier, B, Madar, R, Audier, M

“…3C–SiC epitaxial crystal growth was carried out by repeated cycles of Si MBE deposition at room temperature followed by a carbonization under C 2H 4 and…”
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Investigations of the interface stability in HfO2-metal electrodes by FILLOT, F, CHENEVIER, B, GUILLAUMOT, B, PASSEMARD, G, MAITREJEAN, S, AUDIER, M, CHAUDOUËT, P, BOCHU, B, SENATEUR, J. P, PISCH, A, MOURIER, T, MONCHOIX, H

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Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors by Thomas, M., Piquet, J., Farcy, A., Bermond, C., Torres, J., Lacrevaz, T., Flechet, B., Casanova, N., Perrot, C., Caubet, P., Chenevier, B.

“…The MIM capacitor is a key passive component for analog and RF applications. To be integrated among copper interconnect levels, MIM capacitors have to be…”
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